Abstract: Disclosed is a thermoelectric conversion material having excellent performance. The thermoelectric material according to the present disclosure includes Cu and Se, and has a plurality of different crystal structures together, in which Cu atoms and Se atoms are arranged in the crystal, at a predetermined temperature.

Abstract: In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: <Chemical formula 1>[Bi1?xMxCuu?wTwOa?yQ1yTebSez]Ac, where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0?x<1, 0.5?u?1.5, 0<w?1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5, 0?z<1.5 and 0<c<0.2.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.

Abstract: Disclosed is a thermoelectric material with excellent thermoelectric conversion performance. The thermoelectric material is expressed by Chemical Formula 1 below: CuxSe1-yXy ??<Chemical Formula 1> where X is at least one element selected from the group consisting of F, Cl, Br and I, 2<x?2.6 and 0<y<1.

Abstract: Disclosed is a thermoelectric material with excellent thermoelectric performance. The thermoelectric material is expressed by Chemical Formula 1 below: CuxSe1-yQy ??<Chemical Formula 1> where Q is at least one element selected from the group consisting of S and Te, 2<x?2.6 and 0<y<1.

Abstract: Disclosed is a thermoelectric material with excellent thermoelectric conversion performance. The thermoelectric material includes a matrix having Cu and Se, a Cu-containing particle, and an Ag-containing structure.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.

Abstract: Disclosed is a thermoelectric conversion material having excellent performance. The thermoelectric material according to the present disclosure includes a matrix including Cu and Se, and Cu-containing particles.

Abstract: Disclosed is a thermoelectric conversion material having excellent performance. The thermoelectric material according to the present disclosure includes Cu and Se, and has a plurality of different crystal structures together, in which Cu atoms and Se atoms are arranged in the crystal, at a predetermined temperature.

Abstract: Disclosed is a thermoelectric conversion material with high performance. The thermoelectric material according to the present disclosure may be represented by the following chemical formula 1: CuxSe??<Chemical Formula 1> where 2<x?2.6.

Abstract: Disclosed is a method for manufacturing a thermoelectric material having high thermoelectric conversion performance in a broad temperature range. The method for manufacturing a thermoelectric material according to the present disclosure includes forming a mixture by weighing Cu and Se based on the following chemical formula 1 and mixing the Cu and the Se, and forming a compound by thermally treating the mixture: <Chemical Formula 1>CuxSe where 2<x<2.6.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zSez, where 0<x?0.25 and 0.4<z?2.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0?y<1, 0?m?1, 0?a?1, 0?n<9, 0?z?4, 0?b?3 and 0<n+z+b.