Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

Abstract: A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.

Abstract: An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula: [Chemical Formula] MxAl1?xNy, wherein x and y satisfy the following relations: 0<x<1 and y?1.

Abstract: A computing device of the present invention estimates an unknown parameter ? of a model formula when distributed sample data is acquired, wherein when an estimated quantity of ? is acquired, a function g is estimated using a random forest model, such that when an estimated quantity of g is acquired, the estimated quantity of g and the estimated quantity of ? are used so as estimate a function G as a prediction formula for new data corresponding to a specific item such that an estimated quantity of G is acquired, and thus new data xnew is received, thereby enabling the class of the specific item to be classified from the calculated value.

Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

Abstract: A method for diagnosing lung cancer in a subject by using a complex biomarker group is provided. The method includes steps of: (a) a computing system (1) acquiring a model M by using expression level data by individual biomarkers in the complex biomarker group and then (2) acquiring expression level data by the individual biomarkers measured from a biological specimen of the subject or their processed data Bk; and (b) the computing system determining whether lung cancer is detected in the subject by using the acquired data of the subject by referring to the model M; wherein the complex biomarker group includes CEA, HE4, ApoA2, TTR, sVCAM-1 and RANTES.

Abstract: A computing device of the present invention estimates an unknown parameter ? of a model formula when distributed sample data is acquired, wherein when an estimated quantity of ? is acquired, a function g is estimated using a random forest model, such that when an estimated quantity of g is acquired, the estimated quantity of g and the estimated quantity of ? are used so as estimate a function G as a prediction formula for new data corresponding to a specific item such that an estimated quantity of G is acquired, and thus new data xnew is received, thereby enabling the class of the specific item to be classified from the calculated value.

Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

Abstract: A method for diagnosing lung cancer in a subject by using a complex biomarker group is provided. The method includes steps of: (a) a computing system (1) acquiring a model M by using expression level data by individual biomarkers in the complex biomarker group and then (2) acquiring expression level data by the individual biomarkers measured from a biological specimen of the subject or their processed data Bk; and (b) the computing system determining whether lung cancer is detected in the subject by using the acquired data of the subject by referring to the model M; wherein the complex biomarker group includes CEA, HE4, ApoA2, TTR, sVCAM-1 and RANTES.

Abstract: A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.

Abstract: Provided are an alkoxysilylated epoxy compound, a composite of which exhibits good heat resistance properties, particularly low CTE and increased glass transition temperature, and a cured product thereof exhibits good flame retardancy and composition of which does not require additional silane coupling agent, a method for preparing the same and a composition and a cured product including the same. An alkoxysilylated epoxy compound including at least one alkoxysilyl group and at least two epoxy groups, a method for preparing the same by epoxide ring-opening reaction of starting material and alkoxysilylation, an epoxy composition including the epoxy compound, and a cured product and a use of the composition are provided. Since chemical bonds may be formed between alkoxysilyl group and filler and between alkoxysilyl groups, chemical bonding efficiency of the composite may be improved. Thus, the composite exhibits good heat resistance properties and the cured product exhibits good flame retardancy.

Abstract: A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon.

Abstract: A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon.

Abstract: An oxetane-cyclic epoxy compound represented by Formula 1: where R1 is hydrogen, a methyl group or an ethyl group.

Abstract: Provided are an alkoxysilylated epoxy compound, a composite of which exhibits good heat resistance properties, particularly low CTE and increased glass transition temperature, and a cured product thereof exhibits good flame retardancy and composition of which does not require additional silane coupling agent, a method for preparing the same and a composition and a cured product including the same. An alkoxysilylated epoxy compound including at least one alkoxysilyl group and at least two epoxy groups, a method for preparing the same by epoxide ring-opening reaction of starting material and alkoxysilylation, an epoxy composition including the epoxy compound, and a cured product and a use of the composition are provided. Since chemical bonds may be formed between alkoxysilyl group and filler and between alkoxysilyl groups, chemical bonding efficiency of the composite may be improved. Thus, the composite exhibits good heat resistance properties and the cured product exhibits good flame retardancy.

Abstract: There is provided a composition including an alkoxysilylated epoxy compound, a composition of which exhibits good heat resistance properties, low CTE and high glass transition temperature or Tg-less and not requiring a separate coupling agent, and inorganic particles, a cured product formed of the composition, and a use of the cured product. An epoxy composition including an alkoxysilylated epoxy compound and inorganic particles, an epoxy composition including an epoxy compound, inorganic particles and a curing agent, a cured product of the composition, and a use of the composition are provided. Since chemical bonds may be formed between the alkoxysilyl group and the inorganic particles and between the alkoxysilyl groups, a composition of the composition including the alkoxysilylated epoxy compound and the inorganic particles exhibits improved heat resistance properties, decreased CTE, and increased glass transition temperature or Tg less.

Abstract: A composite sheet of the present invention comprises an oxetane-epoxy-based compound, represented by chemical formula 1, as a binder.

Abstract: A composite sheet of the present invention comprises an oxetane-(meth)acrylate compound, represented by chemical formula I, as a binder.