Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.

Abstract: An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber. The processing gas is prevented from coming down to a lower space of the reaction chamber by purge gas supplied from a lower surface of the reaction chamber. Accordingly to this, a particle source is minimized and a period to check an equipment is prolonged. Also, the purge gas is prevented from mounting to an upper space of the reaction chamber by a pressure of the processing gas, thereby not influencing to a process for CVD. The processing gas and the purge gas are exhausted through a gas outlet installed at a lateral wall of the reaction chamber as a ring shaped recess. A shielding layer for preventing the processing gas and the purge gas from being mixed each other is horizontally installed at a middle portion of the gas outlet.

Abstract: An apparatus of manufacturing a semiconductor device includes a chamber having an outlet, a susceptor in the chamber to hold a substrate thereon, a source material container supplying the chamber with a source material, a liquid mass flow controller connected to the source material container, a plurality of vaporizers connected to the liquid mass flow controller, a plurality of source gas injectors, each of which is connected to each vaporizer and one end of each of which projects into the chamber, a reactive gas container supplying the chamber with a reactive gas, and a plurality of reactive gas injectors connected to the reactive gas container, one end of each of which projects into the chamber.

Abstract: An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: Disclosed is a single wafer LPCVD apparatus. The single wafer LPCVD apparatus comprises: a vacuum chamber having an upper part sealed by a quartz dome, the vacuum chamber receiving a single wafer loaded therein; a bell jar having a dome-shaped inner wall, covering the quartz dome, and spaced by a selected interval from the quartz dome; a dome-shaped plasma electrode established between the bell jar and the quartz dome; an RF power supply for applying an RF power to the dome-shaped plasma electrode; a thermally insulated wall provided on the entire inner wall of the bell jar; a sheath heater having a heater wire and an insulator for covering the heater wire, the sheath heater being attached and established to a surface of the adiabatic wall in a shape of a coil; and a cooling pipe established in a wall of the bell jar. Temperature uniformity within the vacuum chamber is enhanced and the manufacture of a high-temperature heater for hot processing is unnecessary.

Abstract: Disclosed is a semiconductor device manufacturing apparatus provided with a rotational gas injector for supplying source gases at an upper portion of a reaction chamber. According to the invention, source gases are injected from the upside of the wafers through the rotational type gas injector, and non-reacted gases are exhausted into the downside space of the wafers, so that lowering in the thickness uniformity of a thin film due to the horizontal flow of source gases provided in the conventional art decrease remarkably. Accordingly, although multiple wafers are loaded in a single reaction chamber, a thin film having very high thickness uniformity can be deposited with respect to all the wafers, thereby capable of enhancing the productivity.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: Disclosed is an apparatus for a chemical vapor deposition, which comprises: a reaction chamber 10 having an upper inner wall and a lower inner wall, the lower inner wall being inwardly further protruded than the upper inner wall to form a stepped portion between the lower inner wall and the upper inner wall; a wafer supporting die 50 installed within the reaction chamber 10; a gas focus ring 70 installed in the upper inner wall; a purge gas supply hole 90 installed in a bottom face of the reaction chamber 10; a gas discharge hole 80 installed in an upper portion of the lower inner wall; and a pumping line 82 for connecting the gas discharge hole 80 with a vacuum pump. This invention can prevent the process gas from being deposited on a lower portion of the reaction chamber 10. If accumulation of the gas occurs around the gas discharge hole 80, a burning phenomenon appears around the gas discharge hole 80 due to the heat of a main heater installed inside the wafer supporting die 50.

Abstract: An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber. The processing gas is prevented from coming down to a lower space of the reaction chamber by purge gas supplied from a lower surface of the reaction chamber. Accordingly to this, a particle source is minimized and a period to check an equipment is prolonged. Also, the purge gas is prevented from mounting to an upper space of the reaction chamber by a pressure of the processing gas, thereby not influencing to a process for CVD. The processing gas and the purge gas are exhausted through a gas outlet installed at a lateral wall of the reaction chamber as a ring shaped recess. A shielding layer for preventing the processing gas and the purge gas from being mixed each other is horizontally installed at a middle portion of the gas outlet.

Abstract: An HDP-CVD apparatus includes: a reactive chamber constructed with a lower chamber with an opened upper portion and a ceramic dome covering the upper portion of the lower chamber; a gas discharge pipe installed at the lower chamber; an RF coil installed to cover an outer wall of the ceramic dome; a gas injection pipe inserted into a wall of the ceramic dome through a marginal end portion of the ceramic dome from the outside of the reactive chamber, guided to the middle portion of the ceramic dome, and come out in the internal space of the reactive chamber at the middle portion of the ceramic dome; and a substrate support installed inside the reactive chamber in order to mount a substrate. Since the process gas is pre-heated, a reactivity is improved and a very high density plasma can be obtained.

Abstract: An apparatus of manufacturing a semiconductor device includes a chamber having an outlet, a susceptor in the chamber to hold a substrate thereon, a source material container supplying the chamber with a source material, a liquid mass flow controller connected to the source material container, a plurality of vaporizers connected to the liquid mass flow controller, a plurality of source gas injectors, each of which is connected to each vaporizer and one end of each of which projects into the chamber, a reactive gas container supplying the chamber with a reactive gas, and a plurality of reactive gas injectors connected to the reactive gas container, one end of each of which projects into the chamber.

Abstract: An apparatus for fabricating a semiconductor device comprising: a reactor for providing a reaction region separated from outside; a pedestal arranged within said reactor to support a semiconductor substrate; a substrate transport port for loading said semiconductor substrate into said reactor; and upper and lower plasma electrodes for generating plasma within said reaction region, said upper and lower plasma electrodes being disposed in the upper and lower portions of said reaction region in respect to said pedestal, respectively. The apparatus further comprise a slot valve plasma electrode within the substrate transport port, and the slot valve plasma electrode is connected to the lower plasma electrode via an RF wire. Also, the upper and lower plasma electrodes are connected to the same RF power supply.

Abstract: An apparatus for an apparatus for fabricating a semiconductor device comprising: an electrically grounded reactor for providing a reaction space sealed from the outer atmosphere; a susceptor for settling a wafer and arranged within the reactor to prevent electric connection to the reactor; a plasma electrode provided around the upper part of the reactor; an RF power supply electrically connected to the susceptor and the plasma electrode to provide RF power to the same; and an RF relay for applying the RF power supplied from the RF power supply to at least one of the susceptor and the plasma electrode. According to the apparatus, the optimal plasma atmosphere can be easily generated for a certain process without any additional plasma electrode. Furthermore, cleaning around the susceptor can be efficiently carried out by using the susceptor as a plasma electrode.

Abstract: An apparatus for fabricating a semiconductor device in which an O-ring can be protected from any thermal damage when used for sealing a reaction chamber or a quartz tube in a high temperature process, the apparatus comprising: a reaction chamber having an upper chamber with an upper flange and a lower chamber with a lower flange, the upper and lower flanges being coupled to define a reaction space sealed from the outer atmosphere; an O-ring inserted between the upper and lower flanges; a heater arranged within the reaction chamber; a water pipe provided within the lower flange; a metal seal provided to the upper surface of the lower flange of the reaction chamber; and a cooling flange provided with a water pipe adapted for cooling water to flow through the water pipe, the cooling flange being coupled with the upper flange of the reaction chamber so that the metal seal can be pressed onto the upper surface of the upper flange of the reaction chamber.

Abstract: Disclosed is a single wafer LPCVD apparatus. The single wafer LPCVD apparatus comprises: a vacuum chamber having an upper part sealed by a quartz dome, the vacuum chamber receiving a single wafer loaded therein; a bell jar having a dome-shaped inner wall, covering the quartz dome, and spaced by a selected interval from the quartz dome; a dome-shaped plasma electrode established between the bell jar and the quartz dome; an RF power supply for applying an RF power to the dome-shaped plasma electrode; an adiabatic wall provided on the entire inner wall of the bell jar; a sheath heater having a heater wire and an insulator for covering the heater wire, the sheath heater being attached and established to a surface of the adiabatic wall in a shape of a coil; and a cooling pipe established in a wall of the bell jar. Temperature uniformity within the vacuum chamber is enhanced and the manufacture of a high-temperature heater for hot processing is unnecessary.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.