Abstract: A display may include an array of pixels that receive control signals from a chain of gate drivers. Each gate driver may include a logic sub-circuit and an output buffer sub-circuit. The output buffer sub-circuit may include depletion mode semiconducting oxide transistors with high mobility. The logic sub-circuit may include semiconducting oxide transistors, some of which can be depletion mode transistors and some of which can be enhancement mode transistors with lower mobility. The logic sub-circuit may include at least a carry circuit, a voltage setting circuit, an inverting circuit, a discharge circuit.

Abstract: A display may include an array of pixels that receive control signals from a chain of gate drivers. Each gate driver may include a logic sub-circuit and an output buffer sub-circuit. The output buffer sub-circuit may include depletion mode semiconducting oxide transistors with high mobility. The logic sub-circuit may include semiconducting oxide transistors, some of which can be depletion mode transistors and some of which can be enhancement mode transistors with lower mobility. The logic sub-circuit may include at least a carry circuit, a voltage setting circuit, an inverting circuit, a discharge circuit.

Abstract: A pixel array may be illuminated with backlight illumination from a backlight. The backlight may include a two-dimensional array of light-emitting diodes, with each light-emitting diode being placed in a respective cell. Different light-emitting diodes may have unique brightness magnitudes based on the content of the given display frame. Driver integrated circuits may control one or more associated light-emitting diodes to have a desired brightness level. The driver integrated circuits may be formed in an active area of the backlight. The driver integrated circuits may be arranged in groups that are daisy chained together. A digital signal (that includes information such as addressing information) may be propagated through the group of driver integrated circuits. To manage thermal performance of the backlight, the backlight may include a thermally conductive layer and/or a heat sink structure. To increase the efficiency of the backlight, the backlight may include one or more reflective layers.

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

Abstract: A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.

Abstract: An electronic device may include a display. The display may include display driver circuitry that is configured to provide image data to columns of pixels and gate driver circuitry that is configured to provide control signals to rows of pixels. The display may be operable at a native refresh rate that is equal to the highest refresh rate at which the display has full resolution. The display may also be operable in a high refresh rate mode with a high refresh rate that is twice (or some other scaling factor greater than) the native refresh rate. To enable operation at the high refresh rate mode, vertical resolution of the display may be sacrificed. In other words, rows of pixels may be grouped together into effective rows that are then scanned in sequence. The gate driver circuitry may be formed as thin-film transistor circuitry or from gate driver integrated circuits.

Abstract: A display may have pixels configured to display images. The pixels may be formed from thin-film transistor circuitry on a substrate. Color filter elements formed from colored polymer such as colored photoimageable polymer may be formed on the substrate. A black matrix formed from black photoimageable polymer may have an array of openings. The colored polymer may have first portions that overlap the black matrix and second portions in the openings that form the color filter elements. In some portions of the pixels, the thin-film transistor circuitry may be interposed between the first portions of the colored polymer and the black matrix. In other portions of the pixels, data lines may be formed that are overlapped by the black matrix and that are interposed between the first portions of the colored polymer and the black matrix.

Abstract: An electronic device may have a housing and a display in the housing. The display may have one or more curved edges such as curved edges associated with rounded corners in the display and housing. The display may have an array of pixels. The display may include full-strength pixels and may have a band of antialiasing pixels having selectively reduced strengths to visually smooth content displayed along the curved edges. The pixels may be organic light-emitting diode pixels, liquid crystal display pixels, or other display pixels. Organic light-emitting diode pixels may have drive transistors and associated organic light-emitting diodes. Selectively elevated series or opaque light blocking structures of selectively reduced areas may be used to selectively reduce the strength of the antialiasing pixels. Liquid crystal display pixels may include electrodes of different shapes and/or opaque layer openings of different sizes to form antialiasing pixels in desired patterns.

Abstract: A display may have an array of light-emitting diode pixels or pixels containing portions of a liquid crystal layer to which electric fields are applied using electrodes. A pixel with a light-emitting diode may have a drive transistor coupled in series with the light-emitting diode. A storage capacitor may be coupled to a gate of the drive transistor. A pixel with a liquid crystal portion may have a storage capacitor coupled to a given one of the electrodes in that pixel. Switching circuitry in each pixel may be used to load data from a data line into the storage capacitor of the pixel. The switching circuitry may include a semiconducting-oxide transistor coupled to an associated data line and a series-connected silicon transistor that is coupled to the storage capacitor.

Abstract: A touch screen. In some examples, the touch screen can comprise a first element coupled to a first sense connection, and a second element coupled to a second sense connection. In some examples, the first and second sense connections can be configured such that a load presented by the first sense connection and the first element is substantially equal to a load presented by the second sense connection and the second element. In some examples, the first and second sense connections can comprise detour routing configured such that a resistance of the first sense connection is substantially equal to a resistance of the second sense connection. In some examples, the first and second sense connections can be coupled to dummy routing configured such that a first capacitance presented by the first sense connection is substantially equal to a second capacitance presented by the second sense connection.

Abstract: A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.

Abstract: A touch screen having layers. The touch screen can include a substrate upon which the layers of the touch screen are disposed, and a touch region including a touch pixel electrode, a first display sub-pixel and a second display sub-pixel. The touch screen can also include a sense connection coupled to touch sensing circuitry. An intermediate connection can be disposed between the touch pixel electrode and the sense connection, and can be coupled to the sense connection at the first display sub-pixel and the touch pixel electrode at the second display sub-pixel. In some examples, the sense connection can be disposed at least partially underneath a structure in the first display sub-pixel, such as a data line. In some examples, the intermediate connection can be comprised of a same material type as a structure in the first display sub-pixel, such as a gate line material.

Abstract: A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.

Abstract: A display may have pixels configured to display images. The pixels may be formed from thin-film transistor circuitry on a substrate. Color filter elements formed from colored polymer such as colored photoimageable polymer may be formed on the substrate. A black matrix formed from black photoimageable polymer may have an array of openings. The colored polymer may have first portions that overlap the black matrix and second portions in the openings that form the color filter elements. In some portions of the pixels, the thin-film transistor circuitry may be interposed between the first portions of the colored polymer and the black matrix. In other portions of the pixels, data lines may be formed that are overlapped by the black matrix and that are interposed between the first portions of the colored polymer and the black matrix.

Abstract: A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel. The transistors may be thin-film transistors having active areas, first and second source-drain terminals, and gates. Gate lines may be used to distribute gate control signals to the gates of the transistors in each row. Data lines that run perpendicular to the gate lines may be used to distribute image data along columns of pixels. The gate lines may be connected to gate line extensions that run parallel to the data lines. The data lines may each overlap a respective one of the gate line extensions. Vias may be used to connect the gate line extensions to the gate lines. The gate line extensions may all have the same length.

Abstract: A display may have an array of light-emitting diode pixels or pixels containing portions of a liquid crystal layer to which electric fields are applied using electrodes. A pixel with a light-emitting diode may have a drive transistor coupled in series with the light-emitting diode. A storage capacitor may be coupled to a gate of the drive transistor. A pixel with a liquid crystal portion may have a storage capacitor coupled to a given one of the electrodes in that pixel. Switching circuitry in each pixel may be used to load data from a data line into the storage capacitor of the pixel. The switching circuitry may include a semiconducting-oxide transistor coupled to an associated data line and a series-connected silicon transistor that is coupled to the storage capacitor.

Abstract: A tumbler having a Peltier device includes: a container having a channel formed in a center portion in a longitudinal direction and a circular drink storing part enclosing the channel and storing drink therein; a Peltier device disposed adjacent to an inner wall of the channel of the container and transferring heat from the drink stored in the drink storing part; and a blowing unit installed to a lower portion of the container to supply an air to the channel.

Abstract: A display device may include pixels and source lines that provide data line signals to the pixels. The display device may also include gate lines that provide gate signals to switches associated with the pixels. The display device may also include vertical gate lines disposed generally parallel to the source lines and coupled to the gate lines at cross point nodes. The display device may also include compensation lines, such that each compensation line is proximate to a respective vertical gate line. The compensation lines may transmit compensation signals having an opposite polarity as compared to respective gate signals to reduce or eliminate a kickback voltage on at least one of the plurality of pixels.

Abstract: A touch screen is disclosed. The touch screen can comprise a substrate having a first surface upon which a touch or proximity event is to be detected, and a second surface that opposes the first surface, and a touch sensor electrode and a first display pixel including a first display pixel TFT formed on the second surface of the substrate. The first touch sensor electrode can be disposed between the second surface of the substrate and the first display pixel TFT, and the first touch sensor electrode can be configured to detect the touch or proximity event. In some examples, the substrate can comprise a TFT glass substrate. In some examples, the touch screen can comprise a first touch sensor routing electrically coupled to the first touch sensor electrode, wherein the first touch sensor routing is disposed between the second surface of the substrate and the first display pixel TFT.