Patents by Inventor Kyung-Wook Kwon
Kyung-Wook Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11932618Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.Type: GrantFiled: March 13, 2023Date of Patent: March 19, 2024Assignee: ILDONG PHARMACEUTICAL CO., LTD.Inventors: Hong Chul Yoon, Kyung Mi An, Myong Jae Lee, Jin Hee Lee, Jeong-geun Kim, A-rang Im, Woo Jin Jeon, Jin Ah Jeong, Jaeho Heo, Changhee Hong, Kyeojin Kim, Jung-Eun Park, Te-ik Sohn, Changmok Oh, Da Hae Hong, Sung Wook Kwon, Jung Ho Kim, Jae Eui Shin, Yeongran Yoo, Min Whan Chang, Eun Hye Jang, In-gyu Je, Ji Hye Choi, Gunhee Kim, Yearin Jun
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Patent number: 11912674Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.Type: GrantFiled: March 4, 2021Date of Patent: February 27, 2024Assignee: IL DONG PHARMACEUTICAL CO., LTD.Inventors: Jae-Hoon Kang, Hong-Sub Lee, Yoon-Suk Lee, Jin-Ah Jeong, Sung-Wook Kwon, Jeong-Guen Kim, Kyung-Sun Kim, Dong-Keun Song, Sun-Young Park, Kyeo-Jin Kim, Ji-Hye Choi, Hey-Min Hwang
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Patent number: 11705482Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: GrantFiled: December 23, 2022Date of Patent: July 18, 2023Assignee: SK Hynix system ic Inc.Inventors: Kyung Wook Kwon, Mun Young Lee, Myoung Kyun Choi
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Publication number: 20230129912Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: ApplicationFiled: December 23, 2022Publication date: April 27, 2023Inventors: Kyung Wook KWON, Mun Young LEE, Myoung Kyun CHOI
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Patent number: 11569343Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: GrantFiled: January 6, 2021Date of Patent: January 31, 2023Assignee: SK HYNIX SYSTEM IC INC.Inventors: Kyung Wook Kwon, Mun Young Lee, Myoung Kyun Choi
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Publication number: 20210384293Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: ApplicationFiled: January 6, 2021Publication date: December 9, 2021Inventors: Kyung Wook KWON, Mun Young LEE, Myoung Kyun CHOI
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Patent number: 8853026Abstract: Semiconductor devices and methods of fabricating the same are provided. An insulating film can be disposed on a semiconductor substrate, and insulating film patterns can be formed opening a plurality of areas with predetermined widths by patterning the insulating film. A plurality of ion implantation areas having a first conductivity type can be formed by implanting impurities into the plurality of open areas, and an oxide film pattern can be formed on each of the ion implantation areas. The insulating film patterns can be removed, and ion implantation areas having a second conductivity type can be formed by implanting impurities using the oxide film pattern as a mask. The semiconductor substrate can be annealed at a high temperature to form deep wells.Type: GrantFiled: March 12, 2013Date of Patent: October 7, 2014Assignee: Dongbu Hitek Co., Ltd.Inventor: Kyung Wook Kwon
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Publication number: 20140246762Abstract: Semiconductor devices and methods of fabricating the same are provided. An insulating film can be disposed on a semiconductor substrate, and insulating film patterns can be formed opening a plurality of areas with predetermined widths by patterning the insulating film. A plurality of ion implantation areas having a first conductivity type can be formed by implanting impurities into the plurality of open areas, and an oxide film pattern can be formed on each of the ion implantation areas. The insulating film patterns can be removed, and ion implantation areas having a second conductivity type can be formed by implanting impurities using the oxide film pattern as a mask. The semiconductor substrate can be annealed at a high temperature to form deep wells.Type: ApplicationFiled: March 12, 2013Publication date: September 4, 2014Applicant: DONGBU HITEK CO., LTD.Inventor: Kyung Wook KWON
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Patent number: 8198659Abstract: A semiconductor device and a method of manufacturing a semiconductor device. A method of manufacturing a semiconductor device may include forming a gate electrode over a semiconductor substrate, a second conductive type ion implantation region at opposite sides of a gate electrode, a second conductive type ion implantation region as a first conductive type second ion implantation region by implanting a first conductive type impurity over opposite sides of said gate electrode, and/or forming a first conductive type first ion implantation region that substantially surrounds a first conductive type second ion implantation region. A method of manufacturing a semiconductor device may form an N type MOSFET and/or a P type MOSFET using a single photolithography process for each N+ source/drain photolithography process and/or P+ source/drain photolithography process.Type: GrantFiled: November 18, 2009Date of Patent: June 12, 2012Assignee: Dongbu HiTek Co., Ltd.Inventor: Kyung-Wook Kwon
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Publication number: 20100127311Abstract: A semiconductor device and a method of manufacturing a semiconductor device. A method of manufacturing a semiconductor device may include forming a gate electrode over a semiconductor substrate, a second conductive type ion implantation region at opposite sides of a gate electrode, a second conductive type ion implantation region as a first conductive type second ion implantation region by implanting a first conductive type impurity over opposite sides of said gate electrode, and/or forming a first conductive type first ion implantation region that substantially surrounds a first conductive type second ion implantation region. A method of manufacturing a semiconductor device may form an N type MOSFET and/or a P type MOSFET using a single photolithography process for each N+ source/drain photolithography process and/or P+ source/drain photolithography process.Type: ApplicationFiled: November 18, 2009Publication date: May 27, 2010Inventor: Kyung-Wook Kwon