Abstract: In a capacitive structure of an integrated circuit a comb-like configuration or other thin element configuration provides for capacitive coupling between electrode elements in one plane. By forming electrodes in a plurality of planes and selectively shifting the positioning of the electrodes in one plane relative to those in another plane, capacitive coupling between the electrodes in the different planes is achieved. In this way capacitance and stability with process variations can be affected. Furthermore, by using the metal interconnect layers to form the capacitive structures, the need for additional process steps in defining poly-layers, is avoided.