Abstract: DMD projection light values for HDTV have various manufacturing requirements, including the high yield integration of the DMD superstructure on top of an underlying CMOS address circuit. The CMOS chip surface contains several processing artifacts that can lead to reduced yield for the DMD superstructure. A modified DMD architecture and process are disclosed that minimizes the yield losses caused by these CMOS artifacts while also reducing parasitic coupling of the high voltage reset pulses to the underlying CMOS address circuitry.

Abstract: A method of resetting deflectable pixels of a spatial light modulator is disclosed. A pulse train of voltage is applied to the device to cause it to mobe from its deflected position.

Abstract: A bistable deformable mirror device (DMD) pixel architecture is disclosed, wherein the torsion hinges are placed in a layer different from the torsion beam layer. This results in pixels which can be scaled to smaller dimensions while at the same time maintaining a large fractional active area, an important consideration for bright, high-density displays such as are used in high-definition television applications.

Abstract: An electrostatically deflectable beam spatial light modulator with the beams (30), address electrodes (42, 46), and landing electrodes (40, 41) to provide soft-landing of the beams on the landing electrodes (40, 41) which gives uniform large-angle deflection plus high reliability.

Abstract: A linear spatial light modulator with two offset rows of pixels for slight overlap of images, and a printer system using such a spatial light modulator with dark field projection optics is disclosed. The pixels include electrostatically deflectable elements which all bend in the same direction to permit use of dark field projection. The addressing electrodes for the elements are beneath the reflecting surface and arranged perpendicular to the rows of pixels with half on each side of the rows. The printer uses a xerographic engine for conversion of modulated light into print, and an entire row is printed without any scanning.

Abstract: Preferred embodiments include a monolithic uncooled infrared detector array of bolometers fabricated over a silicon substrate (142); the bolometers include a stack (144) of oxide (146) TiN (148), a-Si:H (150), TiN (152), oxide (154) with the TiN forming the infrared absorbers and resistor contacts and the a-Si:H the resistor with a high temperature coefficient of resistivity. The resistor is suspended over the silicon substrate (142) by metal interconnects (154 and 156) and related processing circuitry is formed in the silicon substrate (142) beneath the resistor.

Abstract: DMD projection light values for HDTV have various manufacturing requirements, including the high yield integration of the DMD superstructure on top of an underlying CMOS address circuit. The CMOS chip surface contains several processing artifacts that can lead to reduced yield for the DMD superstructure. A modified DMD architecture and process are disclosed that minimizes the yield losses caused by these CMOS artifacts while also reducing parasitic coupling of the high voltage reset pulses to the underlying CMOS address circuitry.

Abstract: A deflectable beam spatial light modulator formed from a structure of a reflecting layer, typically metal, on a spacer layer, typically photoresist, which in turn is on a substrate containing electronic addressing circuitry is disclosed. Also, the method of fabrication including a plasma etch after dicing of the substrate into chips is disclosed.

Abstract: Spatial light modulators with deflectable metal flaps hinged to conducting posts on a substrate are disclosed. The metal flaps and conducting post may be a single piece, and connected to addressing circuitry in the substrate. Also, plasma etching to fabricate the flaps without breakage is disclosed.

Abstract: An electrostatically deflectable beam spatial light modulator with the beam composed of two layers of aluminum alloy and the hinge connecting the beam to the remainder of the alloy formed in only one of the two layers; this provides a thick stiff beam and a thin compliant hinge. The alloy is on a spacer made of photoresist which in turn is on a semiconductor substrate. The substrate contains addressing circuitry in a preferred embodiment.

Abstract: A frame addressed spatial light modulator with pixels arranged along columns of charge transfer devices, and optical projection and processing systems using such modulators are disclosed. The pixels include electrostatically deflectable flaps supported by conducting posts with nodes gated to the charge transfer device. Schlieren, dark field and reverse dark field optics are available.

Abstract: A linear spatial light modulator with two offset rows of pixels for slight overlap of images, and a printer system using such a spatial light modulator with dark field projection optics is disclosed. The pixels include electrostatically deflectable elements which all bend in the same direction to permit use of dark field projection. The addressing electrodes for the elements are beneath the reflecting surface and arranged perpendicular to the rows of pixels with half on each side of the rows. The printer uses a xerographic engine for conversion of modulated light into print, and an entire row is printed without any scanning.

Abstract: An image projection system for producing a projected image in response to electrical signals which represent the image to be projected. The projection system includes input capability to produce electrical signals in response to an image to be projected. These electrical signals are then transmitted to a light modulator which receives light from an external source. The light modulator consists of arrays of deformable mirrors which selectively deflect the light from the external source in response to the electrical signals received from the input capability. The deflected light is absorbed by opaque stops. The undeflected light travels through optics which form the projected image. A printer using this image projection system is also disclosed. The printer further includes the ability to develop the projected image in such a manner that the image is transferrable to a paper surface in a printer in such a manner that the image is reproduced upon the surface in a printer form.

Abstract: Methods of fabrication of spatial light modulators with deflectable beams by plasma etching after dicing of a substrate into chips, each of the chips an SLM, is disclosed. Also, various architectures available with such plasma etching process are disclosed and include metal cloverleafs for substrate addressing, metal flaps formed in a reflecting layer over a photoresist spacer layer, and torsion hinged flaps in a reflecting layer.

Abstract: A light modulator comprising a light-reflective metallized membrane defining a deformable mirror disposed over a semiconductor substrate of one conductivity type in which a matrix array of field effect address transistors are formed, the metallized membrane cooperating with a matrix of floating metallic field plate members disposed on an insulating layer covering the substrate to define an array of air gap capacitors for line addressing by the field effect address transistors. The floating metallic field plates are opaque to light and prevent photocharge generation in the active regions of the matrix array of field effect address transistors. The metallized membrane is spaced from the field effect address transistors and the metallic floating field plates by an upstanding semiconductor grid structure which is formed on the insulating layer of the semiconductor substrate and defines gate electrodes for the address transistors.

Abstract: A piggyback readout stratified channel CCD includes, in a semiconductor substrate, a charge transfer channel, a barrier region lying under and adjacent to the charge transfer channel, and a charge integration channel lying under and adjacent to the barrier region. The semiconductor substrate and barrier region have dopant atoms of a first type; while the charge transfer channel and charge integration channel have dopant atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel; and a plurality of phase electrodes are serially disposed thereon. In operation, charge transfers from the charge integration channel to the charge transfer channel, and charge packets propagate simultaneously along both the charge transfer channel and the charge integration channel in a piggyback fashion.

Abstract: A serial readout stratified channel CCD includes a semiconductor substrate with a charge transfer channel lying therein. A barrier region lies under and adjacent to the charge transfer channel; and a plurality of spaced apart charge integration regions lie under and adjacent to the barrier region. The semiconductor substrate and barrier region have dopant atoms of a first type; while the charge transfer channel and plurality of charge integration regions have dopant atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel; and a plurality of phase electrodes are serially disposed on the insulating layer transversely to the channel. In operation, charge transfers from the charge integration regions to respective portions of the charge transfer channel, and is propagated along the charge transfer channel.

Abstract: A parallel readout stratified channel CCD includes a plurality of parallel spaced apart charge transfer channels lying in a semiconductor substrate. A barrier region lies under and adjacent to all the charge transfer channels and their separating regions. A charge integration channel lies under and adjacent to the barrier region. The substrate and barrier region have dopant of atoms of a first type; while a charge integration channel has dopant of atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel, and a plurality of phase electrodes are serially disposed thereon transversely to all of the charge transfer channels. Further included are interchannel transfer regions under selected portions of predetermined ones of the electrodes. These enable localized interchannel charge transfer.