Abstract: In an embodiment a radiation-emitting semiconductor component includes a radiation-emitting semiconductor chip configured to emit electromagnetic radiation with a first peak wavelength, a conversion element configured to emit electromagnetic radiation with a second peak wavelength and a dielectric layer stack arranged on the radiation-emitting semiconductor chip and the conversion element, wherein a transmittance of the dielectric layer stack for the electromagnetic radiation with the first peak wavelength and for the electromagnetic radiation with the second peak wavelength in a first angular range is greater than a threshold value, and wherein the transmittance of the dielectric layer stack for the electromagnetic radiation with the first peak wavelength and for the electromagnetic radiation with the second peak wavelength in a second angular range is less than the threshold value.

Abstract: The invention relates to a semiconductor light emitting chip including a semiconductor layer sequence having an active layer which is provided and arranged to generate light when in operation and to couple out via a light outcoupling surface, a filter layer deposited on the light outcoupling surface, and a contact structure deposited on the light outcoupling surface in a region free of the filter layer. The invention also relates to a method for producing said light-emitting semiconductor chip.

Abstract: A method of manufacturing a semiconductor device includes epitaxially growing a sacrificial layer over a GaN substrate, epitaxially growing a first semiconductor layer over the sacrificial layer and forming a first layer over a first main surface of the first semiconductor layer, the first main surface being on a side of the first semiconductor layer remote from the GaN substrate. The method further includes forming a fluid channel or trench extending through the first layer and the first semiconductor layer to the sacrificial layer, etching the sacrificial layer, including introducing an etchant into the fluid channel or trench, to remove the GaN substrate and forming a second dielectric layer over a second main surface of the first semiconductor layer.

Abstract: In an embodiment a method for producing a plurality of micro semiconductor LED structures in a wafer includes epitaxially growing a semiconductor layer over a growth substrate wafer, applying a hard-mask material layer over the semiconductor layer, wherein a hard-mask material layer includes a plurality of adjacently arranged windows facing towards the semiconductor layer, introducing depressions into the semiconductor layer in the windows by sublimation and epitaxially growing a semiconductor light-emitting diode structure in each of the depressions.

Abstract: In an embodiment, a method for producing a radiation-emitting semiconductor chip includes providing a substrate, applying an intermediate layer to the substrate, applying a semiconducting layer sequence to the intermediate layer, applying an etch stop layer to the semiconducting layer sequence, epitaxially applying a semiconductor body having an inclined side surface to the etch stop layer and removing the substrate, the intermediate layer and the semiconducting layer sequence up to the etch stop layer.

Abstract: An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.

Abstract: An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.

Abstract: A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.

Abstract: A radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer for generating electromagnetic radiation. The semiconductor chip also includes a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer. The semiconductor chip further includes a top surface extending transversely with respect to the reflector surface and having a first emission region. The semiconductor chip additionally includes a further reflector situated opposite the reflector. The semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the emission region of the top surface. A main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the steps: a) providing a carrier composite having a plurality of component regions; b) forming a filter layer on the carrier composite; c) forming a radiation conversion layer on the filter layer; d) arranging a plurality of semiconductor bodies on the radiation conversion layer, wherein the semiconductor bodies each have a semiconductor layer sequence having an active region provided for radiation generation and are free of a substrate stabilizing the semiconductor body; e) forming a contact layer for producing an electrical connection between the semiconductor bodies; f) forming an insulation layer on the contact layer; g) forming electrical contact surfaces, each of which are electrically conductively connected to the contact layer; and h) separating the carrier composite into the optoelectronic semiconductor components.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment a radiation-emitting component includes a radiation-emitting emitter having a front side, an optical element arranged on the front side and a dielectric filter arranged between the front side and the optical element, wherein the optical element comprises a plurality of reflection surfaces and a plurality of radiation exit surfaces, wherein each of the reflection surfaces has an angle of inclination of between 45° and 80°, inclusive, with respect to the front side, wherein a main emission direction of the radiation-emitting component includes an exit angle between 10° and 80°, inclusive, with the front side, and wherein the dielectric filter is configured to transmit radiation having an entrance angle within a first angular range and to reflect radiation having an entrance angle within a second angular range.

Abstract: A radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer for generating electromagnetic radiation. The semiconductor chip also includes a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer. The semiconductor chip further includes a top surface extending transversely with respect to the reflector surface and having a first emission region. The semiconductor chip additionally includes a further reflector situated opposite the reflector. The semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the emission region of the top surface. A main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.

Abstract: In an embodiment an optoelectronic component includes a semiconductor body having an active region configured to generate primary electromagnetic radiation and an exit surface, a first and a second dielectric mirror each located on the exit surface; and a conversion element between the second dielectric mirror and the exit surface, wherein the component is configured to emit radiation having a first peak at a first wavelength and a second peak at a second wavelength, wherein the second peak results at least in part from a conversion of radiation generated in the optoelectronic component by the conversion element, wherein each spectral width of the first and second peaks is at most 50 nm, wherein the first dielectric mirror is transmissive to radiation of the first wavelength incident at angles of incidence in a predetermined first angular range and is reflective to radiation of the first wavelength incident at angles of incidence in a predetermined second angular range, and wherein the second dielectric mirro

Abstract: An optoelectronic component includes a semiconductor body having an active region that generates primary electromagnetic radiation and an exit surface; an optical element arranged downstream of the exit surface that deflects and/or converts radiation generated in the component; and a dielectric mirror between the exit surface and the optical element, wherein the dielectric mirror is transmissive to radiation of a predetermined wavelength generated in the component and incident at angles of incidence in a predetermined first angular range, and is reflective to the radiation of the predetermined wavelength incident at angles of incidence in a predetermined second angular range.

Abstract: A radiation-emitting device includes an optoelectronic component for emitting first electromagnetic radiation. The radiation-emitting device also includes a conversion element having an entrance surface and an exit surface. The radiation-emitting device further includes a dielectric mirror on the exit surface. The radiation-emitting device is configured such that first radiation emitted by the component during operation enters the conversion element via the entrance surface. The conversion element is configured for converting the first radiation into second electromagnetic radiation, which subsequently exits the conversion element via the exit surface. The dielectric mirror is transmissive to second radiation that is incident at angles of incidence in a predefined first angle range, and is reflective for second radiation that is incident at angles of incidence in a predefined second angle range.

Abstract: In an embodiment a semiconductor component includes a semiconductor body having an active region and an emission area, a first dielectric mirror layer, a converter layer configured to convert radiation generated in the semiconductor component to radiation of a second wavelength rang and a second dielectric mirror layer, wherein the first dielectric mirror layer and the converter layer are arranged between the emission area and the second dielectric mirror layer, wherein the first dielectric mirror layer is transmissive for radiation of a first wavelength range incident at angles of incidence in a predetermined first angular range and reflective for radiation of the first wavelength range incident at angles of incidence in a predetermined second angular range, and wherein the second dielectric mirror layer is transmissive for radiation of the second wavelength range incident at angles of incidence in the first angular range and reflective for radiation of the second wavelength range incident at angles of incid

Abstract: An optoelectronic device may include an arrangement having a plurality of emitter elements configured to sequentially emit light of different wavelength ranges. The arrangement may include a plurality of time-of-flight detector elements configured to detect the light emitted by the emitter elements and reflected at a sample and to carry out a measurement for determining the distance of the reflection point of the light at the sample from the respective time-of-flight detector element. The device further includes an evaluation unit configured to generate a three-dimensional image of the sample for each wavelength range emitted by the emitter elements on the basis of the light detected by the time-of-flight detector elements and the distance of the reflection point of the light from the respective time-of-flight detector element and to determine the distribution of a substance in the sample from the images.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.