Abstract: A zipped ion-exchange membrane (Z-IEM) having at least one cation-exchange polyelectrolyte (CEP) crosslinked with at least one anion-exchange polyelectrolyte (AEP), wherein the CEP has a molar fraction of positive charges (x) so that: (i) when x=0.5, the Z-IEM is a completely neutralized ion-exchange membrane; (ii) when x>0.5, the Z-IEM is a cation-conducting ion-exchange membrane; (iii) when x<0.5, the Z-IEM is an anion-conducting ion-exchange membrane.

Abstract: Solid catalyst with a high thermal stability for the (co)polymerization of ?-olefins, comprising titanium, magnesium, at least one metal selected from hafnium and zirconium, aluminum and chlorine, wherein at least 60% of the titanium is in oxidation state +3, and, when examined by means of XPS spectroscopy, has an absorption band characteristic of a binding energy ranging from 455 to 458 eV. Said catalyst, used in combination with a suitable co-catalyst in (co)polymerization processes of ?-olefins at a high temperature, shows an improved productivity, a high incorporation of co-monomers in the copolymerization of ethylene and an increased thermal stability with respect to the systems so far in use.

Abstract: Solid catalyst with a high thermal stability for the (co)polymerization of ?-olefins, comprising titanium, magnesium, at least one metal selected from hafnium and zirconium, aluminum and chlorine, wherein at least 60% of the titanium is in oxidation state +3, and, when examined by means of XPS spectroscopy, has an absorption band characteristic of a binding energy ranging from 455 to 458 eV. Said catalyst, used in combination with a suitable co-catalyst in (co)polymerization processes of ?-olefins at a high temperature, shows an improved productivity, a high incorporation of co-monomers in the copolymerization of ethylene and an increased thermal stability with respect to the systems so far in use.

Abstract: The present invention relates to a modified tungsten oxide having an atomic concentration of 0.5 to 7.0%, preferably from 2.0 to 5.0%, of nitrogen atoms in lattice position, with respect to the total number of atoms of the oxide, having a surface morphology, detectable by means of a scanning electron microscope, characterized by nanostructures in the form of vermiform or branched open swellings, preferably having a length ranging from 200 to 2,000 nm, and a width ranging from 50 to 300 nm, having an appearance similar to Rice Krispies. The present invention also relates to a process for the preparation of the above oxide by the anodization of metallic tungsten, and also a photoanode comprising the above oxide.

Abstract: A process is described for the activation of zeolitic catalysts containing titanium having the formula: xTiO2(1-x)SiO2 wherein x ranges from 0.0001 to 0.4, which consists in treating said materials with a solution of an ammonium salt of a carboxylic acid and subsequently subjecting them to calcination. The catalysts thus treated have higher catalytic performances with respect to those not treated, in oxidation processes of organic substrates.

Abstract: A process is described for the activation of zeolitic catalysts containing titanium having the formula: xTiO2(1-x)SiO2 wherein x ranges from 0.0001 to 0.4, which consists in treating said materials with a solution of an ammonium salt of a carboxylic acid and subsequently subjecting them to calcination. The catalysts thus treated have higher catalytic performances with respect to those not treated, in oxidation processes of organic substrates.

Abstract: The present invention relates to a catalyst consisting of a metal of the VIII group supported on acid activated carbon functionalized with sulfonic groups, a process for the synthesis of hydrogen peroxide from hydrogen and oxygen which uses said catalyst and the use of the hydrogen peroxide solution in oxidation processes catalyzed by titanium-silicalite.

Abstract: A process for preparing an SOI structure with a deep thin oxide layer which comprises, in succession, a first ion implantation at an oxygen fluence within the range of 10.sup.15 -10.sup.16 ions/cm.sup.2, thermal treatment at a temperature within the range of 600.degree.-900.degree. C., a second ion implantation at an oxygen fluence within the range of 2.times.10.sup.17 -8.times.10.sup.17 ions/cm.sup.2, and a final thermal treatment at a temperature within the range of 1150.degree.-1400.degree. C.

Abstract: A process for fabrication, by epitaxial recrystallization, of insulated-gate field-effect transistors with junctions of minimum depth, includes the formation of a layer of polycrystalline silicon on a substrate of monocrystalline silicon in predetermined areas to form source and drain regions of an insulated-gate field-effect transistor, aligned with a gate electrode of this transistor. Doping impurities are then introduced in the layer by ion implantation, using an implantation energy sufficient to render the entire layer of polycrystalline silicon amorphous and so as to pass the polycrystalline to monocrystalline interface. Finally, epitaxial recrystallization of the silicon rendered amorphous, starting from the substrate itself, in predetermined areas, is effected by a low-temperature heat treatment.