Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: A plasma enhanced chemical vapor deposition process for depositing a titanium nitride film on a polymeric substrate is provided, the process including placing the polymeric substrate within a chemical vapor deposition chamber evacuated to a pressure within a range of from about 0.1 Torr to about 10 Torr, heating the polymeric substrate to a temperature within a range of from about 150.degree. C. to about 250.degree. C., introducing a vaporized organometallic compound and ammonia gas into the chamber, generating a plasma within the chamber, and, maintaining the polymeric substrate within the chamber for a time sufficient for a layer of titanium nitride to deposit upon the polymeric substrate.