Abstract: The present invention is a system and a method of filtering a signal at a receiver, the signal having at least a desired channel and blockers. A first converter converts a first copy of the signal resulting in a relatively narrow band, high-resolution first signal. A second converter converts a second copy of the signal resulting in a relatively wide band, low-resolution second signal. Once each copy of the signal is converted, the copies are passed to a combiner. At the combiner, the two copies of the signal are analyzed and the desired channel is extracted from the first copy of the signal by removing any inter-modulation product caused by any interference detected in the second copy from the blockers (not detected in the first copy).

Abstract: The present invention is a system and a method of filtering a signal at a receiver, the signal having at least a desired channel and blockers. A first converter converts a first copy of the signal resulting in a relatively narrow band, high-resolution first signal. A second converter converts a second copy of the signal resulting in a relatively wide band, low-resolution second signal. Once each copy of the signal is converted, the copies are passed to a combiner. At the combiner, the two copies of the signal are analyzed and the desired channel is extracted from the first copy of the signal by removing any inter-modulation product caused by any interference detected in the second copy from the blockers (not detected in the first copy).

Abstract: An analog to digital converter that first converts an analog input voltage into first and second periodic signals having a phase difference there between that is a function of the analog input voltage and then introduces the first periodic signal into a forward direction data path through a series of consecutive delay cells so that the first periodic signal propagates through the cells via the first series of delay elements in a first direction, and introduces the second periodic signal into a reverse direction data path through the same series of delay cells so that the second periodic signal propagates through the cells via the second series of delay elements in an opposite direction, and using the second periodic signal to latch the first periodic signal in each cell so as to generate an output signal for each cell, said output signals of said cells collectively indicating the unique cell in which the leading edges of corresponding pulses in the first and second directions met, and decoding the outputs of

Abstract: An analog to digital converter that first converts an analog input voltage into first and second periodic signals having a phase difference there between that is a function of the analog input voltage and then introduces the first periodic signal into a forward direction data path through a series of consecutive delay cells so that the first periodic signal propagates through the cells via the first series of delay elements in a first direction, and introduces the second periodic signal into a reverse direction data path through the same series of delay cells so that the second periodic signal propagates through the cells via the second series of delay elements in an opposite direction, and using the second periodic signal to latch the first periodic signal in each cell so as to generate an output signal for each cell, said output signals of said cells collectively indicating the unique cell in which the leading edges of corresponding pulses in the first and second directions met, and decoding the outputs of

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.