Patents by Inventor Laurent Diehl
Laurent Diehl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9784620Abstract: A spectroscopy system includes an array of quantum cascade lasers (QCLs) that emits an array of non-coincident laser beams. A lens array coupled to the QCL array substantially collimates the laser beams, which propagate along parallel optical axes towards a sample. The beams remain substantially collimated over the lens array's working distance, but may diverge when propagating over longer distances. The collimated, parallel beams may be directed to/through the sample, which may be within a sample cell, flow cell, multipass spectroscopic absorption cell, or other suitable holder. Alternatively, the beams may be focused to a point on, near, or within the target using a telescope or other suitable optical element(s). When focused, however, the beams remain non-coincident; they simply intersect at the focal point.Type: GrantFiled: December 31, 2015Date of Patent: October 10, 2017Assignee: Pendar Technologies, LLCInventors: Mark F. Witinski, Laurent Diehl, Christian Pfluegl
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Patent number: 9735549Abstract: Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.Type: GrantFiled: July 27, 2016Date of Patent: August 15, 2017Assignees: Massachusetts Institute of Technology, Pendar Technologies, LLCInventors: Anish K. Goyal, Laurent Diehl, Christian Pfluegl, Christine A. Wang, Mark Francis Witinski
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Publication number: 20170063043Abstract: Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.Type: ApplicationFiled: July 27, 2016Publication date: March 2, 2017Inventors: Anish K. Goyal, Laurent Diehl, Christian Pfluegl, Christine A. Wang, Mark Francis Witinski
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Patent number: 9450053Abstract: Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.Type: GrantFiled: July 25, 2013Date of Patent: September 20, 2016Assignees: Massachusetts Institute of Technology, Pendar Technologies, LLCInventors: Anish K. Goyal, Laurent Diehl, Christian Pfluegl, Christine A. Wang, Mark Francis Witinski
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Publication number: 20160116337Abstract: A spectroscopy system includes an array of quantum cascade lasers (QCLs) that emits an array of non-coincident laser beams. A lens array coupled to the QCL array substantially collimates the laser beams, which propagate along parallel optical axes towards a sample. The beams remain substantially collimated over the lens array's working distance, but may diverge when propagating over longer distances. The collimated, parallel beams may be directed to/through the sample, which may be within a sample cell, flow cell, multipass spectroscopic absorption cell, or other suitable holder. Alternatively, the beams may be focused to a point on, near, or within the target using a telescope or other suitable optical element(s). When focused, however, the beams remain non-coincident; they simply intersect at the focal point.Type: ApplicationFiled: December 31, 2015Publication date: April 28, 2016Inventors: Mark F. Witinski, Laurent Diehl, Christian Pfluegl
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Patent number: 9255841Abstract: A spectroscopy system includes an array of quantum cascade lasers (QCLs) that emits an array of non-coincident laser beams. A lens array coupled to the QCL array substantially collimates the laser beams, which propagate along parallel optical axes towards a sample. The beams remain substantially collimated over the lens array's working distance, but may diverge when propagating over longer distances. The collimated, parallel beams may be directed to/through the sample, which may be within a sample cell, flow cell, multipass spectroscopic absorption cell, or other suitable holder. Alternatively, the beams may be focused to a point on, near, or within the target using a telescope or other suitable optical element(s). When focused, however, the beams remain non-coincident; they simply intersect at the focal point.Type: GrantFiled: April 30, 2013Date of Patent: February 9, 2016Assignee: Pendar Technologies, LLCInventors: Mark F. Witinski, Laurent Diehl, Christian Pfluegl
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Patent number: 9246310Abstract: A laser source based on a quantum cascade laser array (QCL), wherein the outputs of at least two elements in the array are collimated and overlapped in the far field using an external diffraction grating and a transform lens.Type: GrantFiled: August 3, 2011Date of Patent: January 26, 2016Assignees: President and Fellows of Harvard College, Massachusetts Institute of TechnologyInventors: Anish Goyal, Benjamin G. Lee, Christian Pfluegl, Laurent Diehl, Mikhail Belkin, Antonio Sanchez-Rubio, Federico Capasso
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Patent number: 8995483Abstract: The present technology relates to a fast and efficient heating element based on a thick heterostructure which is monolithically integrated in close proximity to one or more components of a photonic or an electronic circuit. Inventive embodiments also relate to methods of use illustrative heating elements to control or tune the characteristics of the electronic or photonic component(s). Inventive embodiments may be particularly useful in the fast spectral tuning of the emission wavelength of single mode QCLs.Type: GrantFiled: December 14, 2012Date of Patent: March 31, 2015Assignee: EOS Photonics, Inc.Inventors: Laurent Diehl, Christian Pfluegl, Mark F. Witinski
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Publication number: 20140027708Abstract: Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.Type: ApplicationFiled: July 25, 2013Publication date: January 30, 2014Applicants: EOS Photonics, Inc., Massachusetts Institute of TechnologyInventors: Anish K. Goyal, Laurent Diehl, Christian Pfluegl, Christine A. Wang, Mark Francis Witinski
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Publication number: 20130286397Abstract: A spectroscopy system includes an array of quantum cascade lasers (QCLs) that emits an array of non-coincident laser beams. A lens array coupled to the QCL array substantially collimates the laser beams, which propagate along parallel optical axes towards a sample. The beams remain substantially collimated over the lens array's working distance, but may diverge when propagating over longer distances. The collimated, parallel beams may be directed to/through the sample, which may be within a sample cell, flow cell, multipass spectroscopic absorption cell, or other suitable holder. Alternatively, the beams may be focused to a point on, near, or within the target using a telescope or other suitable optical element(s). When focused, however, the beams remain non-coincident; they simply intersect at the focal point.Type: ApplicationFiled: April 30, 2013Publication date: October 31, 2013Inventors: Mark F. Witinski, Laurent Diehl, Christian Pfluegl
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Publication number: 20130208743Abstract: A broadband quantum cascade laser (QCL) source includes one or more QCLs having an active region designed based on a diagonal laser transition. The QCL source may include multiple QCLs formed in an array or the QCL source may comprise a single QCL device. Although each QCL provides an emission spectrum comprising a small range of wavelengths at a given applied voltage, changes in the applied operating voltage result in changes in the emission spectrum of the QCL due to the Stark shift. When the QCL source comprises a plurality of QCLs formed in an array, at least some of the elements in the array may receive different applied operating voltages such that the combined output spectrum of the array is broader than that achievable by a single QCL.Type: ApplicationFiled: August 2, 2011Publication date: August 15, 2013Applicant: President and Fellows of Harvard CollegeInventors: Federico Capasso, Christian Pfluegl, Laurent Diehl, Romain Blanchard
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Publication number: 20130156052Abstract: The present technology relates to a fast and efficient heating element based on a thick heterostructure which is monolithically integrated in close proximity to one or more components of a photonic or an electronic circuit. Inventive embodiments also relate to methods of use illustrative heating elements to control or tune the characteristics of the electronic or photonic component(s). Inventive embodiments may be particularly useful in the fast spectral tuning of the emission wavelength of single mode QCLs.Type: ApplicationFiled: December 14, 2012Publication date: June 20, 2013Inventors: Laurent Diehl, Christian Pfluegl, Mark F. Witinski
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Publication number: 20130148678Abstract: A broadband quantum cascade laser includes multiple gain regions and a spacer layer disposed between at least two of the gain regions. The arrangement and characteristics of the gain regions and the spacer layer may be configured to reduce cross absorption between the gain regions. For example, one gain region may be configured to produce gain in an energy range in which another gain region produces absorptive effects. The thickness of the spacer layer may be selected to separate optical modes produced by adjacent gain regions while still producing a single broadband output from the quantum cascade laser. Gain competition between gain stages within a gain region may be mitigated by dividing gain stages with overlapping gain curves among multiple gain regions.Type: ApplicationFiled: March 28, 2011Publication date: June 13, 2013Applicant: President and Fellows of Harvard CollegeInventors: Laurent Diehl, Christian Pfluegl, Romain Blanchard, Federico Capasso
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Patent number: 8351481Abstract: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.Type: GrantFiled: November 5, 2009Date of Patent: January 8, 2013Assignee: President and Fellows of Harvard CollegeInventors: Federico Capasso, Benjamin G. Lee, Christian Pflugl, Laurent Diehl, Mikhail A. Belkin
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Publication number: 20120033697Abstract: A laser source based on a quantum cascade laser array (QCL), wherein the outputs of at least two elements in the array are collimated and overlapped in the far field using an external diffraction grating and a transform lens.Type: ApplicationFiled: August 3, 2011Publication date: February 9, 2012Applicants: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Anish Goyal, Benjamin G. Lee, Christian Pfluegl, Laurent Diehl, Mikhail Belkin, Antonio Sanchez-Rubio, Federico Capasso
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Publication number: 20110310915Abstract: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.Type: ApplicationFiled: November 5, 2009Publication date: December 22, 2011Applicant: President and Fellows of Harvard CollegeInventors: Federico Capasso, Benjamin G. Lee, Christian Pflugl, Laurent Diehl, Mikhail A. Belkin
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Patent number: 8014430Abstract: A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1?) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1? overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1? do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1?, and 1?) for a transition down from level 2. Each of the levels 1, 1?, and 1? has a non-uniform squared wave function distribution.Type: GrantFiled: February 27, 2009Date of Patent: September 6, 2011Assignee: President and Fellows of Harvard CollegeInventors: C. Kumar N. Patel, Alexei Tsekoun, Richard Maulini, Arkadiy Lyakh, Christian Pflugl, Laurent Diehl, Qijie Wang, Federico Capasso
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Publication number: 20110058176Abstract: A mid infrared spectrometer comprises a high brightness broadband source that generates an output with a broad spectral range in the order of hundreds of wave numbers, a wavelength dispersive element and a detector. In one embodiment, the source comprises an array of semiconductor laser devices operating simultaneously. Each device emits light at wavelength different from the wavelengths emitted by the other devices in the array and the devices are arranged so that the combined output continuously covers the broad spectral range. In another embodiment, each of the lasers in the array is a quantum cascade laser device. In still another embodiment, the quantum cascade laser devices in the array are operated in the regime of Risken-Nummedal-Graham-Haken (RNGH) instabilities. In yet another embodiment, each of the lasers in the array is a mode-locked quantum cascade laser device.Type: ApplicationFiled: November 3, 2008Publication date: March 10, 2011Applicants: Bruker Optics, Inc., Presidents and Fellows of Harvard CollegeInventors: Christian Pflugl, Benjamin G. Lee, Laurent Diehl, Mikhail A. Belkin, Federico Capasso, Thomas J. Tague, JR.
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Patent number: 7826509Abstract: A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the lasers and, and control the temperature of the lasers in the array. The device can be used in portable broadband sensors to simultaneously detect a large number of compounds including chemical and biological agents. A microelectronic controller is combined with an array of individually-addressed DFB QCLs with slightly different DFB grating periods fabricated on the same broadband (or multiple wavelengths) QCL material. This allows building a compact source providing narrow-line broadly-tunable coherent radiation in the Infrared or Terahertz spectral range (as well as in the Ultraviolet and Visible spectral ranges, using semiconductor lasers with different active region design).Type: GrantFiled: December 15, 2006Date of Patent: November 2, 2010Assignee: President and Fellows of Harvard CollegeInventors: Mikhail A. Belkin, Benjamin G. Lee, Ross M. Audet, James B. MacArthur, Laurent Diehl, Christian Pflügl, Federico Capasso
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Publication number: 20090213890Abstract: A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1?) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1? overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1? do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1?, and 1?) for a transition down from level 2. Each of the levels 1, 1?, and 1? has a non-uniform squared wave function distribution.Type: ApplicationFiled: February 27, 2009Publication date: August 27, 2009Inventors: C. Kumar N. Patel, Alexei Tsekoun, Richard Maulini, Arkadiy Lyakh, Christian Pflugl, Laurent Diehl, Qije Wang, Federico Capasso