Patents by Inventor Laurent OTTAVIANI

Laurent OTTAVIANI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10732307
    Abstract: A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: August 4, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE D'AIX-MARSEILLE
    Inventors: Laurent Ottaviani, Vanessa Vervisch, Fatima Issa, Abdallah Lyoussi
  • Patent number: 10591620
    Abstract: A system for measuring a particle beam includes a central and peripheral part and a front and back panel. The central part includes a system for producing a space charge zone to be passed through by a beam to be measured, charge carriers of a first and second type being generated by the beam when the latter passes through the space charge zone. The peripheral part includes a system for collecting at least one type of charge carrier from among the first or second type. The peripheral part surrounds the central part such that a particle beam can pass through the central part without passing through the peripheral part, an orifice being provided in back panel, in a region of the central part such that the thickness of the region, along a normal axis to the front panel is less than that of the peripheral part along the normal axis.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: March 17, 2020
    Assignees: UNIVERSITÉ D'AIX MARSEILLE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
    Inventors: Wilfried Vivian Roland Vervisch, Laurent Ottaviani, Stéphane Biondo, Vanessa Laurence Jill Hurtado Ep Vervisch
  • Publication number: 20190277983
    Abstract: A system for measuring a particle beam includes a central and peripheral part and a front and back panel. The central part includes a system for producing a space charge zone to be passed through by a beam to be measured, charge carriers of a first and second type being generated by the beam when the latter passes through the space charge zone. The peripheral part includes a system for collecting at least one type of charge carrier from among the first or second type. The peripheral part surrounds the central part such that a particle beam can pass through the central part without passing through the peripheral part, an orifice being provided in back panel, in a region of the central part such that the thickness of the region, along a normal axis to the front panel is less than that of the peripheral part along the normal axis.
    Type: Application
    Filed: May 15, 2017
    Publication date: September 12, 2019
    Inventors: Wilfried Vivian Roland VERVISCH, Laurent OTTAVIANI, Stéphane BIONDO, Vanessa Laurence Jill HURTADO EP VERVISCH
  • Publication number: 20170363755
    Abstract: A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.
    Type: Application
    Filed: December 21, 2015
    Publication date: December 21, 2017
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUT ENERGIES ALTERNATIVES, UNIVERSITE D'AIX-MARSEILLE
    Inventors: Laurent OTTAVIANI, Vanessa VERVISCH, Fatima ISSA, Abdallah LYOUSSI