Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Abstract: A method is disclosed for the cleaning of a Si surface at low temperatures. Oxide on the Si surface is brought into contact with Ge, which then sublimates off the surface. The Ge contamination remaining after the oxide removal is cleared away by an exposure to an alkali halide. The disclosed cleaning method may by used in semiconductor circuit fabrication for preparing surfaces ahead of epitaxial growth.

Abstract: Various embodiments described herein comprises an optoelectronic device comprising a waveguide structure including a plurality of optical modulator elements each having an optical property that is adjustable upon application of an electrical signal so as to modulate light guided in the waveguide structure. The optoelectronic device also comprises a plurality of amplifiers in distributed fashion. Each amplifier is electrically coupled to one of the optical modulators to apply electrical signals to the optical modulator.

Abstract: A germanium on silicon waveguide photodetector disposed on a silicon on insulator (SOI) substrate. The photodetector is incorporated into a section of a planar silicon waveguide on the substrate. The photodetector generates an electric current as an infrared optical signal travels through the photodetector.

Abstract: A CMOS processing compatible germanium on silicon integrated waveguide photodiode. Positioning contacts in predicted low optical field regions, establishing side trenches in the silicon layer along the length of the photodiode reduces optical losses. Novel taper dimensions are selected based on the desirability of expected operational modes, reducing optical losses when light is injected from the silicon layer to the germanium layer. Reduced vertical mismatch systems have improved coupling between waveguide and photodiode. Light is coupled into and/or out of a novel silicon ring resonator and integrated waveguide photodiode system with reduced optical losses by careful design of the geometry of the optical path. An integrated waveguide photodiode with a reflector enables transmitted light to reflect back through the integrated waveguide photodiode, improving sensitivity. Careful selection of the dimensions of a novel integrated waveguide microdisk photodiode system results in reduced scattering.

Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light from top of the wafer.

Abstract: Various embodiments described herein comprises an optoelectronic device comprising a waveguide structure including a plurality of optical modulator elements each having an optical property that is adjustable upon application of an electrical signal so as to modulate light guided in the waveguide structure. The optoelectronic device also comprises a plurality of amplifiers in distributed fashion. Each amplifier is electrically coupled to one of the optical modulators to apply electrical signals to the optical modulator.

Abstract: Various embodiments described herein comprises an optoelectronic device comprising a waveguide structure including a plurality of optical modulator elements each having an optical property that is adjustable upon application of an electrical signal so as to modulate light guided in the waveguide structure. The optoelectronic device also comprises a plurality of amplifiers in distributed fashion. Each amplifier is electrically coupled to one of the optical modulators to apply electrical signals to the optical modulator.

Abstract: A germanium on silicon waveguide photodetector disposed on a silicon on insulator (SOI) substrate. The photodetector is incorporated into a section of a planar silicon waveguide on the substrate. The photodetector generates an electric current as an infrared optical signal travels through the photodetector.

Abstract: High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

Abstract: A CMOS processing compatible germanium on silicon integrated waveguide photodiode. Positioning contacts in predicted low optical field regions, establishing side trenches in the silicon layer along the length of the photodiode reduces optical losses. Novel taper dimensions are selected based on the desirability of expected operational modes, reducing optical losses when light is injected from the silicon layer to the germanium layer. Reduced vertical mismatch systems have improved coupling between waveguide and photodiode. Light is coupled into and/or out of a novel silicon ring resonator and integrated waveguide photodiode system with reduced optical losses by careful design of the geometry of the optical path. An integrated waveguide photodiode with a reflector enables transmitted light to reflect back through the integrated waveguide photodiode, improving sensitivity. Careful selection of the dimensions of a novel integrated waveguide microdisk photodiode system results in reduced scattering.

Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light to/from the top of a wafer. A wafer level test system uses optical and electronic probes to search for and align with an optoelectronic alignment structure. The test system uses a located optoelectronic alignment structure as a reference point to locate other devices on the wafer. The system tests the operation of selected devices disposed on the wafer. The optoelectronic alignment loop is also used as an alignment reference of known performance for an adjacent device of unknown performance.

Abstract: A horizontal germanium silicon heterostructure photodetector comprising a horizontal germanium p-i-n diode disposed over a horizontal parasitic silicon p-i-n diode uses silicon contacts for electrically coupling to the germanium p-i-n through the p-type doped and n-type doped regions in the silicon p-i-n without requiring direct physical contact to germanium material. The current invention may be optically coupled to on-chip and/or off-chip optical waveguide through end-fire or evanescent coupling. In some cases, the doping of the germanium p-type doped and/or n-type doped region may be accomplished based on out-diffusion of dopants in the doped silicon material of the underlying parasitic silicon p-i-n during high temperature steps in the fabrication process such as, the germanium deposition step(s), cyclic annealing, contact annealing and/or dopant activation.

Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light to/from the top of the wafer. A wafer level test system uses an optical probe to search for and align with an optical alignment loop. The test system uses a located alignment loop as a reference point to locate other devices on the wafer. The test system tests the operation of selected devices disposed on the wafer. The alignment loop is also used as a reference device for an adjacent device of unknown performance.

Abstract: In a computer-assisted product development system comprising a processor and a storage, a software-implemented method for asserting design rules related to the manufacturability of optoelectronic devices comprising germanium. Design rules may be established for devices comprising germanium and/or germanium and silicon heterostructures, thereby enabling and/or enhancing the manufacturability of photodetectors comprising germanium in integrated CMOS devices according to standard and/or custom CMOS processes. In some cases, design rules may be established to define allowable ranges for geometrical parameters related to the shapes defined in one or more mask layers; in some cases, design rules may be established to define allowable ranges for geometrical parameters related to the dimensions of actually constructed devices.

Abstract: Various embodiment comprise silicon-on-insulator waveguide designs that simultaneously achieve both high optical confinement, low-loss, and provide for electrical connections. In certain embodiments, high index contrast waveguides comprise a central elongate waveguide portion and a segmented portion comprising a single thin layer of Silicon-On-Insulator that achieves both high optical confinement and minimal insertion loss. Other devices, such as chemical and biological sensors, and optical elements may also be fabricated.

Abstract: A polarization splitting grating coupler (PSGC) connects an optical signal from an optical element, such as a fiber, to an optoelectronic integrated circuit. The PSGC separates a received optical signal into two orthogonal polarizations and directs the two polarizations to separate waveguides on an integrated circuit. Each of the two separated polarizations can then be processed, as needed for a particular application, by the integrated circuit. A PSGC can also operate in the reverse direction, and couple two optical signals from an integrated circuit to two respective orthogonal polarizations of one optical output signal sent off chip to an optical fiber.

Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light to/from the top of a wafer. A wafer level test system uses optical and electronic probes to search for and align with an optoelectronic alignment structure. The test system uses a located optoelectronic alignment structure as a reference point to locate other devices on the wafer. The system tests the operation of selected devices disposed on the wafer. The optoelectronic alignment loop is also used as an alignment reference of known performance for an adjacent device of unknown performance.

Abstract: The present invention discloses an integration flow of germanium into a conventional CMOS process, with improvements in performing selective area growth, and implementing electrical contacts to the germanium, in a way that has minimal impact on the preexisting transistor devices. The present invention also provides methods to integrate the germanium without impacting the optical or electrical performance of these devices, except where intended, such as in a germanium photodetector, or germanium waveguide photodetector.

Abstract: This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light from top of the wafer.