Patents by Inventor Lawrence G. Matus

Lawrence G. Matus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
    Patent number: 6165874
    Abstract: A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).
    Type: Grant
    Filed: December 16, 1998
    Date of Patent: December 26, 2000
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: J. Anthony Powell, David J. Larkin, Philip G. Neudeck, Lawrence G. Matus
  • Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
    Patent number: 5915194
    Abstract: A method of growing atomically-flat surfaces and high-quality low-defect crystal films of polytypic compounds heteroepitaxially on polytypic compound substrates that are different than the crystal film. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, and 2H-GaN on 6H-SiC.
    Type: Grant
    Filed: July 3, 1997
    Date of Patent: June 22, 1999
    Assignee: The United States of America as represented by the Administrator of National Aeronautics and Space Administration
    Inventors: J. Anthony Powell, David J. Larkin, Philip G. Neudeck, Lawrence G. Matus
  • Compound semi-conductors and controlled doping thereof
    Patent number: 5709745
    Abstract: A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.
    Type: Grant
    Filed: November 6, 1995
    Date of Patent: January 20, 1998
    Assignee: Ohio Aerospace Institute
    Inventors: David J. Larkin, Philip G. Neudeck, J. Anthony Powell, Lawrence G. Matus
  • Compound semiconductor and controlled doping thereof
    Patent number: 5463978
    Abstract: A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.
    Type: Grant
    Filed: July 18, 1994
    Date of Patent: November 7, 1995
    Assignee: Ohio Aerospace Institute
    Inventors: David J. Larkin, Philip G. Neudeck, J. Anthony Powell, Lawrence G. Matus