Patents by Inventor Lawrence Wong
Lawrence Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130277333Abstract: In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter.Type: ApplicationFiled: March 15, 2013Publication date: October 24, 2013Inventors: Nipun Misra, Kartik Ramaswamy, Yang Yang, Douglas A. Buchberger, JR., James D. Carducci, Lawrence Wong, Shane C. Nevil, Shahid Rauf, Kenneth S. Collins
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Apparatus for characterizing a magnetic field in a magnetically enhanced substrate processing system
Patent number: 8148977Abstract: Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor.Type: GrantFiled: January 27, 2009Date of Patent: April 3, 2012Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Hiroji Hanawa, Lawrence Wong, Chinh Dinh -
Patent number: 8080479Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.Type: GrantFiled: April 11, 2007Date of Patent: December 20, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 8076247Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.Type: GrantFiled: April 11, 2007Date of Patent: December 13, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 7988815Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.Type: GrantFiled: July 26, 2007Date of Patent: August 2, 2011Assignee: Applied Materials, Inc.Inventors: Shahid Rauf, Kenneth S. Collins, Kallol Bera, Kartik Ramaswamy, Hiroji Hanawa, Andrew Nguyen, Steven C. Shannon, Lawrence Wong, Satoru Kobayashi, Troy S. Detrick, James P. Cruse
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Patent number: 7972469Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.Type: GrantFiled: April 22, 2007Date of Patent: July 5, 2011Assignee: Applied Materials, Inc.Inventors: Hiroji Hanawa, Andrew Nguyen, Keiji Horioka, Kallol Bera, Kenneth S. Collins, Lawrence Wong, Martin Jeff Salinas, Roger A. Lindley, Hong S. Yang
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Patent number: 7968469Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.Type: GrantFiled: April 11, 2007Date of Patent: June 28, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 7884025Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.Type: GrantFiled: April 11, 2007Date of Patent: February 8, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20110023780Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.Type: ApplicationFiled: July 29, 2009Publication date: February 3, 2011Applicant: APPLIED MATERIALS, INC.Inventors: KARTIK RAMASWAMY, HIROJI HANAWA, KENNETH S. COLLINS, LAWRENCE WONG, SAMER BANNA, ANDREW NGUYEN
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Patent number: 7879731Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.Type: GrantFiled: April 11, 2007Date of Patent: February 1, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20110009999Abstract: An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected between the RF generator and an RF power applicator of the reactor.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: Applied Materials, Inc.Inventors: Chunlei Zhang, Lawrence Wong, Kartik Ramaswamy, James P. Cruse, Hiroji Hanawa
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Publication number: 20100279698Abstract: A wireless telecommunications device is configured so that it is capable of handling multiple instantiations of GSM control channels and thereby capable of holding multiple SIMs, can register each SIM with the network consecutively, and maintain idle network connections for each SIM using separate control channels. This allows calls and messages to be received on any registered SIM.Type: ApplicationFiled: June 26, 2007Publication date: November 4, 2010Applicant: Symbian Software LimitedInventor: Lawrence Wong
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APPARATUS FOR CHARACTERIZING A MAGNETIC FIELD IN A MAGNETICALLY ENHANCED SUBSTRATE PROCESSING SYSTEM
Publication number: 20100188077Abstract: Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor.Type: ApplicationFiled: January 27, 2009Publication date: July 29, 2010Applicant: APPLIED MATERIALS, INC.Inventors: KARTIK RAMASWAMY, HIROJI HANAWA, LAWRENCE WONG, CHINH DINH -
Publication number: 20100015357Abstract: A capacitive plasma discharge system employing multiple feeds of RF source power across an area of an electrode. Multiple RF feed locations across the electrode allow for control of the axial electric field across a radius at various azimuth angles of a plasma processing chamber. In an embodiment, a first RF power feed is coupled to a center of an electrode of the capacitively coupled chamber. The first RF power feed is further coupled to a first RF match network. A second RF power feed is coupled to the electrode at a first radius from the first RF power feed and at a first azimuth angle. The second RF power feed is further coupled to a second RF match network.Type: ApplicationFiled: July 18, 2008Publication date: January 21, 2010Inventors: Hiroji Hanawa, Saturo Kobayashi, Lawrence Wong
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Publication number: 20090257927Abstract: A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator.Type: ApplicationFiled: February 16, 2009Publication date: October 15, 2009Applicant: APPLIED MATERIALS, INC.Inventors: KARTIK RAMASWAMY, HIROJI HANAWA, KENNETH S. COLLINS, LAWRENCE WONG, ANDREW NGUYEN, STEVEN LANE
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Patent number: 7587458Abstract: A method of communication of digital messages with improved efficiency through the use of the transfer of difference data between devices. In one aspect of the invention, the difference data communicated is between different generations of a derived message sequence such as an email thread. In another aspect of the invention, the messages are encoded by means of a codebook, and the difference data communicated is between different versions of the codebook. In this second aspect of the invention, the codebooks may automatically utilize the difference data to adapt their efficiency, and the codebooks may be automatically customized for specific individuals or groups.Type: GrantFiled: November 30, 2005Date of Patent: September 8, 2009Assignee: Nokia CorporationInventor: Lawrence Wong
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Publication number: 20090025879Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.Type: ApplicationFiled: July 26, 2007Publication date: January 29, 2009Inventors: Shahid Rauf, Kenneth S. Collins, Kallol Bera, Kartik Ramaswamy, Andrew Nguyen, Steven C. Shannon, Lawrence Wong, Satoru Kobayashi, Troy S. Detrick, James P. Cruse
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Publication number: 20090025878Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.Type: ApplicationFiled: July 26, 2007Publication date: January 29, 2009Inventors: Shahid Rauf, Kenneth S. Collins, Kallol Bera, Kartik Ramaswamy, Andrew Nguyen, Steven C. Shannon, Lawrence Wong, Satoru Kobayashi, Troy S. Detrick, James P. Cruse
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Publication number: 20080257261Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.Type: ApplicationFiled: April 22, 2007Publication date: October 23, 2008Applicant: APPLIED MATERIALS, INC.Inventors: Hiroji Hanawa, Andrew Nguyen, Keiji Horiaka, Kallol Bera, Kenneth S. Collins, Lawrence Wong, Martin Jeff Salinas, Roger Alan Lindley, Hong S. Yang
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Publication number: 20080260966Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.Type: ApplicationFiled: April 22, 2007Publication date: October 23, 2008Applicant: APPLIED MATERIALS, INC.Inventors: Hiroji Hanawa, Andrew Nguyen, Keiji Horioka, Kallol Bera, Kenneth S. Collins, Lawrence Wong, Martin Jeff Salinas, Roger Alan Lindley, Hong S. Yang