Abstract: A trenched MOS gate controlled rectifier has an asymmetric trench structure between the active area of active trenches and the termination area of termination trenches. The asymmetric trench structure has a gate electrode on one side of the trench to turn on and off the channel of the MOS structure effectively and a field plate structure on the other side with field dielectric sufficiently thick in order to sustain the high electric field during the reverse bias condition.

Abstract: A trenched MOS gate controlled rectifier has an asymmetric trench structure between the active area of active trenches and the termination area of termination trenches. The asymmetric trench structure has a gate electrode on one side of the trench to turn on and off the channel of the MOS structure effectively and a field plate structure on the other side with field dielectric sufficiently thick in order to sustain the high electric field during the reverse bias condition.

Abstract: A trenched MOS gate controlled rectifier has an asymmetric trench structure between the active area of active trenches and the termination area of termination trenches. The asymmetric trench structure has a gate electrode on one side of the trench to turn on and off the channel of the MOS structure effectively and a field plate structure on the other side with field dielectric sufficiently thick in order to sustain the high electric field during the reverse bias condition.

Abstract: A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second layer in which a plurality of trench patterns are formed. A plurality of trenches are formed in the first layer and the second layer by etching based on the trench patterns in the photoresist. The method then laterally etches the second layer to expose a corner portion of the first layer at mesas formed in between the two trenches. A portion of the second layer is preserved at an edge of the rectifier device.

Abstract: A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second layer in which a plurality of trench patterns are formed. A plurality of trenches are formed in the first layer and the second layer by etching based on the trench patterns in the photoresist. The method then laterally etches the second layer to expose a corner portion of the first layer at mesas formed in between the two trenches. A portion of the second layer is preserved at an edge of the rectifier device.