Abstract: Various methods and apparatus for joining stacked substrates to a circuit board are disclosed. In one aspect, a method of manufacturing is provided that includes coupling plural substrates to form a stack. At least one of the plural substrates is a semiconductor chip. Plural conductive vias are formed in a first of the plural substrates. Each of the plural conductive vias includes a first end positioned in the first substrate and a second end projecting out of the first substrate.

Abstract: A fiber of carbon nanotubes was prepared by a wet-spinning method involving drawing carbon nanotubes away from a substantially aligned, supported array of carbon nanotubes to form a ribbon, wetting the ribbon with a liquid, and spinning a fiber from the wetted ribbon. The liquid can be a polymer solution and after forming the fiber, the polymer can be cured. The resulting fiber has a higher tensile strength and higher conductivity compared to dry-spun fibers and to wet-spun fibers prepared by other methods.

Abstract: An data transmission adjustment system that comprises a server and a plurality of data transmission devices within a sensing region. The server adapts to receive a sensed data from at least one data transmission device, define a timeline, divide the timeline into a plurality of monitoring periods, calculate a ratio of the number of the monitoring periods that have received the sensing data from the data transmission device within the sensing region or not to the number of all the monitoring periods, and broadcast at least one message to the data transmission devices within the sensing region according to said ratio.

Abstract: Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip.

Abstract: A fiber of carbon nanotubes was prepared by a wet-spinning method involving drawing carbon nanotubes away from a substantially aligned, supported array of carbon nanotubes to form a ribbon, wetting the ribbon with a liquid, and spinning a fiber from the wetted ribbon. The liquid can be a polymer solution and after forming the fiber, the polymer can be cured. The resulting fiber has a higher tensile strength and higher conductivity compared to dry-spun fibers and to wet-spun fibers prepared by other methods.

Abstract: A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A first underfill is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.

Abstract: Integrated circuit packages comprise vias, each of which extends from a pad in communication with an integrated circuit on a semiconductor chip through insulating material overlying the semiconductor chip to an attachment surface facing a substrate. The portion of each via proximate the attachment surface is laterally offset from the portion proximate the pad from which it extends in a direction away from the center of the semiconductor chip. Metallic material received in the vias mechanically and electrically interconnects the semiconductor chip to the substrate.

Abstract: Methods and apparatus to protect fragile dielectric layers in a semiconductor chip are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first polymer layer over a conductor pad of a semiconductor chip where the conductor pad has a first lateral dimension. An underbump metallization structure is formed on the first polymer layer and in ohmic contact with the conductor pad. The underbump metallization structure has a second lateral dimension greater than the first lateral dimension. A second polymer layer is formed on the first polymer layer with a first opening exposing at least a portion of the underbump metallization structure.

Abstract: A wireless mobile communication method is provided. If a wireless mobile communication service arrives at a core network, the core network sends a paging signal to at least one macro base station and at least one Femto gateway. After the macro base station receives the paging signal, the macro base station pages the at least one mobile station within the coverage of the macro base station. The Femto gateway blocks the paging signal sent from the core network, so that the at least one Femto base station covered by the Femto gateway does not page the mobile station. After a destination mobile station receives the paging signal, the destination mobile station establishes a signaling connection, so that a call to a destination mobile station is established.

Abstract: Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip.

Abstract: A semiconductor device disclosed herein includes a conductive connection structure having a stepped profile that serves as a stress relief feature. The conductive connection structure includes a stress buffer arrangement for a contact pad. The stress buffer arrangement has a stepped via that terminates at the contact pad, and the stepped via has a plurality of inwardly sloped and concentric sections in a stacked orientation. The connection structure also includes underbump metallization overlying at least a portion of the contact pad and lining the stepped via, and a conductive connection element coupled to the underbump metallization. The conductive connection element fills the lined recess.

Abstract: Apparatus and methods pertaining to die scribe structures are disclosed. In one aspect, a method of manufacturing is provided that includes fabricating an active region of a semiconductor die so that the active region has at least one corner. A scribe structure is fabricated around the active region so that the scribe structure includes at least one fillet.

Abstract: Various methods and apparatus for joining stacked substrates to a circuit board are disclosed. In one aspect, a method of manufacturing is provided that includes coupling plural substrates to form a stack. At least one of the plural substrates is a semiconductor chip. Plural conductive vias are formed in a first of the plural substrates. Each of the plural conductive vias includes a first end positioned in the first substrate and a second end projecting out of the first substrate.

Abstract: An efficient and cost-effective method for treating carbon nanotubes (CNTs) is provided. The method includes comprising: dispersing said carbon nanotubes in a dispersing medium to prepare a dispersion system; mixing said dispersion system with adsorbent so that type-specific carbon nanotubes contained in said dispersion system are absorbed onto the adsorbent, wherein the adsorbent is modified by a chemical/biological modifier so as to have different adsorption selectivity to carbon nanotubes of different types; and separating the adsorbent from the dispersion system, whereby the type-specific carbon nanotubes adsorbed onto the adsorbent is separated from the carbon nanotubes of another type enriched in the dispersion system; carbon nanotubes produced by the treatment method, and CNTs devices comprising thereof.

Abstract: An data transmission adjustment system that comprises a server and a plurality of data transmission devices within a sensing region. The server adapts to receive a sensed data from at least one data transmission device, define a timeline, divide the timeline into a plurality of monitoring periods, calculate a ratio of the number of the monitoring periods that have received the sensing data from the data transmission device within the sensing region or not to the number of all the monitoring periods, and broadcast at least one message to the data transmission devices within the sensing region according to said ratio.

Abstract: A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A first underfill is placed between the first semiconductor chip and the surface wherein the second sidewall provides a barrier to flow of the first underfill. Various apparatus are also disclosed.

Abstract: A semiconductor device disclosed herein includes a conductive connection structure having a stepped profile that serves as a stress relief feature. The conductive connection structure includes a stress buffer arrangement for a contact pad. The stress buffer arrangement has a stepped via that terminates at the contact pad, and the stepped via has a plurality of inwardly sloped and concentric sections in a stacked orientation. The connection structure also includes underbump metallization overlying at least a portion of the contact pad and lining the stepped via, and a conductive connection element coupled to the underbump metallization. The conductive connection element fills the lined recess.

Abstract: Methods are provided for fabricating a semiconductor device. In accordance with an exemplary embodiment, a method comprises the steps of providing a semiconductor die having a conductive terminal, forming an insulating layer overlying the semiconductor die, and forming a cavity in the insulating layer which exposes the conductive terminal. The method also comprises forming a first stress-relief layer in the cavity, forming an interconnecting structure having a first end electrically coupled to the first stress-relief layer, and having a second end, and electrically and physically coupling the second end of the interconnecting structure to a packaging substrate.

Abstract: Methods are provided for fabricating a semiconductor device. In accordance with an exemplary embodiment, a method comprises the steps of providing a semiconductor die having a conductive terminal, forming an insulating layer overlying the semiconductor die, and forming a cavity in the insulating layer which exposes the conductive terminal. The method also comprises forming a first stress-relief layer in the cavity, forming an interconnecting structure having a first end electrically coupled to the first stress-relief layer, and having a second end, and electrically and physically coupling the second end of the interconnecting structure to a packaging substrate.

Abstract: A reporting method for a data transmission device within a sensing region that comprises at least one data transmission device(s) for receiving a sensed data from a sensor device, transmitting the sensed data to a server, and broadcasting a message. Furthermore, the data transmission device enters a listening state for receiving the sensed data from the sensor device. If the data transmission device does not receive the message from any of the other data transmission device(s), will enter a reporting state for transmitting the sensed data and broadcasting the message. In addition, the data transmission device enters a sleeping state, if a reporting counter equals to zero. Therefore, the power wastage of the data transmission devices can be reduced.