Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: A communication method and an apparatus are provided. The method includes: receiving, by a terminal device, downlink control information (DCI) from a network device on a first downlink carrier; and determining a first uplink carrier or a second uplink carrier based on the DCI, where the DCI indicates an uplink carrier to be used by the terminal device to send an uplink signal to the network device is the first uplink carrier or the second uplink carrier; the DCI for indicating the first uplink carrier and the DCI for indicating the second uplink carrier having equal bit quantity; and the first downlink carrier, the first uplink carrier, and the second uplink carrier belong to a same cell.

Abstract: Methods and arrangements are described for Multi User Multiple-Input-Multiple-Output (MU-MIMO) signaling via Multiple-Input-Multiple-Output (MIMO) antennas between a base station and one of a plurality of mobile terminals supporting both Single User and Multi User Multiple-Input-Multiple-Output (SU-MIMO and MU-MIMO) signaling modes. Switching between the modes is supported, and the modes have partly shared signaling. SU-MIMO mode signaling which is not needed for MU-MIMO mode signaling is identified. Data bits of the identified signaling is interpreted to comprise signaling information associated with MU-MIMO mode.

Abstract: A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Abstract: A method includes: reporting, by a UE, a CQI value to an eNB; receiving, by the UE, an MCS value sent by the eNB, where the MCS value is determined by the eNB according to the CQI value; and receiving, by the UE, PDSCH data according to the MCS value, where the CQI value and the MCS value are determined according to a second set of tables, where a modulation scheme that can be supported by the second set of tables is higher than 64QAM.

Abstract: An electrical connector includes an insulating body accommodating multiple first terminals. The first terminals include first and second differential signal pairs. No ground terminal is provided at one side of the first differential signal pair. Both sides of the second differential signal pair have ground terminals. The impedance of the first differential signal pair is adjusted by having a distance between the first differential signal pair and the first ground terminal less than a distance between the second differential signal pair and the first ground terminal, or by having a width of a portion of the first differential signal pair exposed out of the insulating body greater than a width of a portion of the second differential signal pair exposed out of the insulating body, or by having a distance between terminals of the first differential signal pair less than a distance between terminals of the second differential signal pair.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Abstract: A data processing method applied to a data processing apparatus is provided. The data processing apparatus includes a central processing unit and a sensor processing unit set, and the sensor processing unit set includes at least one sensor processing unit. This solution resolves problems such as high costs and high function requirements, or overload and frequent system breakdown caused by massive data processing tasks in an existing data processing architecture. A data processing apparatus and a computer-readable storage medium are also provided.

Abstract: Embodiments of the present disclosure provide a backoff window adjustment method, and an apparatus. In downlink transmission, a base station obtains a trigger condition for adjusting a length of a backoff window on a first channel, and adjusts the length of the backoff window of the base station on the first channel according to the obtained trigger condition for adjusting the length of the backoff window on the first channel. In uplink transmission, a user equipment (UE) obtains a trigger condition for adjusting a length of a backoff window on a first channel, and adjusts the length of the backoff window of the UE on the first channel according to the obtained trigger condition for adjusting the length of the backoff window on the first channel.

Abstract: A method and an apparatus for detecting an abnormality of a caller are provided. The method includes at the beginning of a call, acquiring, by a terminal device, real voice/video data of a call object who needs abnormality detection and a corresponding pre-trained multi-stage neural network detection model, during the call, collecting, by the terminal device, call data according to a preset data collection policy, for each call object, inputting the currently collected call data and the real voice/video data of the call object into the model of the call object, and determining whether the call object is abnormal according to a detection result output by the model, in which the call data includes image data and/or voice data, and an identification manner adopted by the model includes face identification, voiceprint identification, limb movement identification, and/or lip language identification.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Abstract: A memory array is provided that includes a plurality of word lines and a plurality of bit lines, and a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element. Each memory cell is coupled between one of the word lines and one of the bit lines. Each memory cell has a half-pitch F, and comprises an area between 2F2 and 4F2.

Abstract: The available transmission resources on a downlink-shared channel are divided into resource blocks, each resource block comprising a predetermined number of sub-carriers during a predetermined time period. The resource blocks are subdivided into localized resource blocks and distributed resource blocks. A user requiring sufficient resources can be allocated a plurality of said localized resource blocks. A user who would require only a small number of said localized resource blocks can instead be allocated subunits of a plurality of said distributed resource blocks.

Abstract: The present invention provides a pharmaceutical composition for treating and/or relieving myopia, the pharmaceutical composition comprises a therapeutically effective amount of an anti-inflammatory agent and a pharmaceutically acceptable carrier; the pharmaceutical composition of the present invention is safe, and can treat and/or relieve myopia by the anti-inflammatory agent. The pharmaceutically acceptable carrier can effectively encapsulate the anti-inflammatory agent at a specific ratio, and the stability and solubility of the pharmaceutical composition can be enhanced.

Abstract: The present disclosure discloses a cutting structure and a sewing process for back wearing protective clothing. An eye gap is formed in the top of a cap cutting piece. An upper neck interface is formed in the bottom of the cap cutting piece. Cap top seams which are in left-right symmetry are formed in the two sides of the eye gap. Cap openings are formed in the two sides of the lower part of the cap cutting piece. An upper right sleeve seam is formed in the upper end of one side of an upper section cutting piece. A lower right sleeve seam is formed in the lower end of one side of the upper section cutting piece. An upper left sleeve seam is formed in the upper end of the other side of the upper section cutting piece. A lower left sleeve seam is formed in the lower end of the other side of the upper section cutting piece.

Abstract: This application provides a radar signal processing method and apparatus, which are applicable to the waveform design of a millimeter-wave radar. The radar signal processing method is applicable to an apparatus, for example, a millimeter-wave radar or a chip system inside the millimeter-wave radar, and the method includes: transmitting a first radar signal on a first frequency band; transmitting a second radar signal on a second frequency band; receiving a first reflected signal and a second reflected signal, where the first reflected signal is an electromagnetic wave reflected by a target object in response to the first radar signal, and the second reflected signal is an electromagnetic wave reflected by the target object in response to the second radar signal; and obtaining at least one of range information, velocity information, and angle information of the target object.

Abstract: An electrical connector includes an insulating body accommodating multiple first terminals. The first terminals include first and second differential signal pairs. No ground terminal is provided at one side of the first differential signal pair. Both sides of the second differential signal pair have ground terminals. The impedance of the first differential signal pair is adjusted by having a distance between the first differential signal pair and the first ground terminal less than a distance between the second differential signal pair and the first ground terminal, or by having a width of a portion of the first differential signal pair exposed out of the insulating body greater than a width of a portion of the second differential signal pair exposed out of the insulating body, or by having a distance between terminals of the first differential signal pair less than a distance between terminals of the second differential signal pair.

Abstract: A memory array is provided that includes a first memory level having a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element, and a plurality of vias, each of the vias coupled in series with a corresponding one of the memory cells.

Abstract: The available transmission resources on a downlink-shared channel are divided into resource blocks, each resource block comprising a predetermined number of sub-carriers during a predetermined time period. The resource blocks are subdivided into localized resource blocks and distributed resource blocks. A user requiring sufficient resources can be allocated a plurality of said localized resource blocks. A user who would require only a small number of said localized resource blocks can instead be allocated subunits of a plurality of said distributed resource blocks.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.