Patents by Inventor Leo B. Freeman, Jr.

Leo B. Freeman, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 3970950
    Abstract: A dual channel high gain differential amplifier utilizing enhancement depletion MOS field effect transistors which exhibits high common mode rejection and fast switching characteristics.
    Type: Grant
    Filed: March 21, 1975
    Date of Patent: July 20, 1976
    Assignee: International Business Machines Corporation
    Inventors: Leo B. Freeman, Jr., Robert J. Incerto, Joseph A. Petrosky, Jr.
  • Patent number: 3961355
    Abstract: A semiconductor device has a heavily doped semiconductor substrate with a lightly doped epitaxial layer overlying a surface of the substrate and of the same conductivity type as the substrate. Electrically insulating barriers extend from at least the surface of the epitaxial layer into the substrate so as to electrically isolate non-common areas of each surface leakage sensitive device within the epitaxial layer from the non-common areas of adjacent surface leakage sensitive devices.
    Type: Grant
    Filed: November 18, 1974
    Date of Patent: June 1, 1976
    Assignee: International Business Machines Corporation
    Inventors: Shakir A. Abbas, Chi S. Chang, Leo B. Freeman, Jr., Ronald W. Knepper