Patents by Inventor Leo BOURDET

Leo BOURDET has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11321626
    Abstract: A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·?B·B>min(?(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that ?(Vbg)<g·?B·B+2|MSO|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, ?B corresponding to a Bohr magneton, ? corresponding to an intervalley energy difference in the semiconducting portion, and MSO corresponding to the intervalley spin-orbit coupling.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: May 3, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Maud Vinet
  • Publication number: 20200226486
    Abstract: A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·?B·B>min(?(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that ?(Vbg)<g·?B·B+2|MSO|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, ?B corresponding to a Bohr magneton, ? corresponding to an intervalley energy difference in the semiconducting portion, and MSO corresponding to the intervalley spin-orbit coupling.
    Type: Application
    Filed: June 27, 2018
    Publication date: July 16, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Leo BOURDET, Louis HUTIN, Yann-Michel NIQUET, Maud VINET