Abstract: An electronic device, including layers, formed from a material that can remain substantially constant in structure, such as glass. The layer can be preformed with through glass vias that support at least one electrically conductive interconnect. The through glass via can have an edge region that can be substantially coplanar with an exposed surface of the layer.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a substrate, a via, a build-up layer, a top layer, and one or more dies. The substrate can include a conductor coating. The via can be connected to the conductor coating. The build-up layer can be on the substrate. The build-up layer can define a channel that the via is formed within and insulate the via during operation of the electronic device. The top layer can be interproximal to the substrate and the via. The one or more dies can be connected to the via.

Abstract: Embodiments include a package structure with one or more layers of dielectric material, where an interconnect bridge substrate is embedded within the dielectric material. One or more via structures are on a first surface of the embedded substrate, where individual ones of the via structures comprise a conductive material and have a tapered profile. The conductive material is also on a sidewall of the embedded substrate.

Abstract: An electronic device comprises a mold layer that includes multiple integrated circuit (IC) dice having contact pads, a glass core patch embedded in encapsulating material that surrounds the top, bottom, and sides of the glass core patch, and a first redistribution layer arranged between the first mold layer and the glass core patch. The first redistribution layer includes electrically conductive interconnect that electrically connects one or more contact pads of the IC dice to the glass core patch.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a photonic integrated circuit and an in situ formed waveguide. In selected examples, the electronic device includes a photonic integrated circuit coupled to an electronic integrated circuit, in a glass layer, where a waveguide is formed in the glass layer.

Abstract: Various embodiments disclosed relate to photonic assemblies. The present disclosure includes methods for packaging a photonic assembly, including attaching a bridge die to a glass substrate, attaching an electronic integrated circuit die to the glass substrate and the bridge die, attaching a photonic integrated circuit die to the glass substrate and the bridge die, bonding a coupling adapter to the glass substrate and in situ forming a waveguide in the coupling adapted, the waveguide aligning with the photonic integrated circuit die.

Abstract: Techniques for low- or zero-misaligned vias are disclosed. In one embodiment, a high-photosensitivity and low-photosensitivity photoresist are applied to a substrate and exposed at the same time with use of a dual-tone mask. After being developed, one photoresist forms an overhang over a sheltered region. The mold formed by the photoresists is filled with copper and then etched. The overhang prevents the top of the copper infill below the overhang region from being etched. As such, the sheltered region forms a pillar or column after etching, which can be used as a via. Other embodiments are disclosed.

Abstract: Techniques for low- or zero-misaligned vias are disclosed. In one embodiment, a high-photosensitivity, medium-photosensitivity, and low-photosensitivity layer are applied to a substrate and exposed at the same time with use of a multi-tone mask. After being developed, one layer forms a mold for a first via, one layer forms a mold for a conductive trace and a second via, and one layer forms an overhang over the position for the second via. The molds formed by the photosensitive layers are filled with copper and then etched. The overhang prevents the top of the copper infill below the overhang region from being etched. As such, the region under the overhang forms a pillar or column after etching, which can be used as a via. Other embodiments are disclosed.

Abstract: Embodiments include a package structure with one or more layers of dielectric material, where an interconnect bridge substrate is embedded within the dielectric material. One or more via structures are on a first surface of the embedded substrate, where individual ones of the via structures comprise a conductive material and have a tapered profile. The conductive material is also on a sidewall of the embedded substrate.

Abstract: Embodiments include a package structure with one or more layers of dielectric material, where an interconnect bridge substrate is embedded within the dielectric material. One or more via structures are on a first surface of the embedded substrate, where individual ones of the via structures comprise a conductive material and have a tapered profile. The conductive material is also on a sidewall of the embedded substrate.

Abstract: Embodiments include a package structure with one or more layers of dielectric material, where an interconnect bridge substrate is embedded within the dielectric material. One or more via structures are on a first surface of the embedded substrate, where individual ones of the via structures comprise a conductive material and have a tapered profile. The conductive material is also on a sidewall of the embedded substrate.

Abstract: Embodiments include devices, systems and processes for using a combined confocal Raman microscope for inspecting a photo resist film material layer formed on the top surface of a layer of a substrate package, to detect border defects between regions of light exposed (e.g., cured) and unexposed (e.g., uncured) resist film material. Use of the confocal Raman microscope may provide a 3D photo-resist chemical imaging and characterization technique based on combining (1) Raman spectroscopy to identify the borders between regions of light exposed and unexposed resist along XY planes, with (2) Confocal imaging to select a Z-height of the XY planes scanned. Such detection provides fast, high resolution, non-destructive in-line inspection, and improves technical development of polymerization profiles of the resist film material.

Abstract: Methods and associated structures of forming a package structure including forming a low melting point solder material on a solder resist opening location of an IHS keep out zone, forming a sealant in a non SRO keep out zone region; attaching the IHS to the sealant, and curing the sealant, wherein a solder joint is formed between the IHS and the low melting point solder material.

Abstract: Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.

Abstract: A system for detecting a void in a photoresist layer can include: a detector, a processor, and a memory. The detector can be arranged to receive reflected light from a surface of a sample. The processor can be in electrical communication with the detector, The memory can store instructions that, when executed by the processor, can cause the processor to perform operations. The operations can comprise: receiving optical data from the detector, receiving calibrated data, and determining an existence of the void. the optical data can include information regarding a signature of the reflected light. The calibrated data can include information regarding a signature for a known sample of photoresist. The determination of the existence of the void can be based on a deviation of the optical data from the calibrated data.

Abstract: Die warpage is controlled for the assembly of thin dies. In one example, a semiconductor die has a back side and a front side opposite the back side. The back side has a semiconductor substrate and the front side has components formed over the semiconductor substrate in front side layers. A backside layer is formed over the backside of the semiconductor die to resist warpage of the die when the die is heated and a plurality of contacts are formed on the front side of the die to attach to a substrate.

Abstract: A method includes identifying a wafer position for a plurality of die on a wafer, storing the wafer position for each of the plurality of die in a database, dicing the wafer into a plurality of singulated die, positioning each of the singulated die in a die position location on a tray, and storing the die position on the tray for each of the singulated die in the database. The database includes information including the wafer position associated with each die position. The tray is transported to a processing tool, and at least one of the plurality of singulated die is removed from the die position on the tray and processed in the processing tool. The processed singulated die is replaced in the same defined location on the tray that the singulated die was positioned in prior to the processing. Other embodiments are described and claimed.

Abstract: Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.

Abstract: Methods of forming a microelectronic packaging structure are described. Those methods may include forming a solder paste comprising a sacrificial polymer on a substrate, curing the solder paste below a reflow temperature of the solder to form a solid composite hybrid bump on the conductive pads, forming a molding compound around the solid composite hybrid bump, and reflowing the hybrid bump, wherein the sacrificial polymer is substantially decomposed.

Abstract: A method includes identifying a wafer position for a plurality of die on a wafer, storing the wafer position for each of the plurality of die in a database, dicing the wafer into a plurality of singulated die, positioning each of the singulated die in a die position location on a tray, and storing the die position on the tray for each of the singulated die in the database. The database includes information including the wafer position associated with each die position. The tray is transported to a processing tool, and at least one of the plurality of singulated die is removed from the die position on the tray and processed in the processing tool. The processed singulated die is replaced in the same defined location on the tray that the singulated die was positioned in prior to the processing. Other embodiments are described and claimed.