Patent number: 7582875
Abstract: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
Type:
Grant
Filed:
May 5, 2005
Date of Patent:
September 1, 2009
Assignees:
Universitaet Karlsruhe., Akademia Gomiczo-Hutnicza, Université Louis Pasteur, Centre National de la Recherche Scientifique, Institute of Electron Technology, Fondazione per Adroterapia Oncologica - Tera, Universite' de Geneve, Instytut Fizyki Jadrowej Im H Niewodniczanskiego
Inventors:
Massimo Caccia, Leopoldo Conte, Mario Alemi, Chiara Cappellini, Antonello Luigi Airoldi, Carla Bianchi, Raffaele Novario, Wim De Boer, Eugene Grigoriev, Halina Niemiec, Wojciech Kucewicz, Francesco Cannillo, Gilles Clauss, Claude Colledani, Grzegorz Deptuch, Wojciech Dulinski, Piotr Grabiec, Jacek Marczewski, Krzysztof Domanski, Bohdan Jaroszewicz, Krzysztof Kucharski, Laura Badano, Omella Ferrando, Georg Popowski, Agnieszka Zalewska, Adam Czermak
Publication number: 20060043313
Abstract: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
Type:
Application
Filed:
May 5, 2005
Publication date:
March 2, 2006
Inventors:
Massimo Caccia, Leopoldo Conte, Mario Alemi, Chiara Cappellini, Antonello Airoldi, Carla Bianchi, Raffaele Novario, Wim De Boer, Eugene Grigoriev, Halina Niemiec, Wojciech Kucewicz, Francesco Cannillo, Gilles Clauss, Claude Colledani, Grzegorz Deptuch, Wojciech Dulinski, Piotr Grabiec, Jacek Marczewski, Krzysztof Domanski, Bohdan Jaroszewicz, Krzysztof Kucharski, Laura Badano, Omella Ferrando, Georg Popowski, Agnieszka Zalewska, Adam Czermak
