Abstract: In a single cleanroom (200) for first (230) and second (240) wafer processing machines, an exhaust device (260) surrounds the second machine (240) that temporarily produces exhaust gas (250) which is detrimental to the processes in the first machine (230). Additionally to a first directed air flow (220) available in the cleanroom (200), the exhaust device (260) generates—in the proximity of gas leakage openings of the second machine (240)—a second air flow (270) that prevents the exhaust gas (250) from further being moved by the first air flow (220) to the first machine (230).

Abstract: An improved method of cleaning a throttle valve and an apparatus for facilitating such cleaning. The method of cleaning a throttle valve is provided by applying ultrasonic wave to the throttle valve. The throttle valve is juxtaposed in close proximity to the exhaust gas port of the reaction chamber. A cleaning gas of nitrogen is used to clean the throttle valve. The throttle valve is heated by an imbedded control heater.

Abstract: Reformation of a round tube to a tube with a selected polygonal segment is achieved by supporting the round tube on a mandrel having rounded corners that mate with the tube's inside diameter. The mandrel is otherwise provided in the resultant polygonal shape. The supported tube is subjected to the compressive force of a die having upper and lower die sections that define an elongated polygonal cavity. The planar sides of the cavity are offset relative to the parting line. Preferably, the corners of the cavity adjacent the parting line are wrapped by a leg of the die section. Upon closure of the die sections, the tube material is allocated to a particular quadrant by contact with the die section and the tube is reformed. Excess material that may result from tolerance permitted variations is delivered to the corners of the polygonal tube section maintaining uniform wall thickness across the flat sides of the reformed tube.

Abstract: A process for fabricating a semiconductor device is enhanced by providing a plasma etching process in which exposed metal surfaces within a plasma etching chamber (24) are protected by a ceramic layer (46). In the plasma etching process, a substrate (10) is placed on a platen (26) located within a plasma etching apparatus (22). A clamping device (40) secures the perimeter of the substrate (10) to the platen (26). The clamping device (40) includes a ceramic layer (46) overlying a metal base (44). When a plasma is ignited within the etching chamber (24), the ceramic layer (46) prevents physical contact of the plasma and the metal base (44) of the clamping device (40).

Abstract: A metal deposition process in which a high-purity metal film (46) is sputter deposited within a sputtering system (10) having insitu passivated metal components. A sputtering target (14) is provided having a thin aluminum coating (44) overlying a refractory metal layer (42). During operation, the aluminum coating (44) is sputtered away from the target (14) and onto exposed metal surfaces within the vacuum chamber (20) of the sputter deposition system (10). Subsequently, a semiconductor substrate (38) is placed in the sputter deposition system (10) and a high-purity metal film (46) is deposited onto the semiconductor substrate (38). Because the insitu passivation process avoid the oxidation of the passivating aluminum, refractory metal sputtered away from the target (14) adheres to the passivating aluminum layer, and does not re-deposit onto the surface of the semiconductor substrate (38) during the sputter deposition process.