Patents by Inventor Li Feng

Li Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11151069
    Abstract: A USB hub and an operating method thereof are provided. The USB hub includes a first USB connector coupled to a first device, a second USB connector coupled to a second device, a first power switch, a second power switch, a power converter, and a third power switch. The first power switch has a first end coupled to a power pin of the first USB connector. The second power switch has a first end coupled to a second end of the first power switch, and a second end coupled to a power pin of the second USB connector. The power converter has an input coupled to the second end of the first power switch. The third power switch has a first end coupled to an output of the power converter, where a second end of the third power switch is coupled to the power pin of the second USB connector.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: October 19, 2021
    Assignee: VIA LABS, INC.
    Inventor: Li-Feng Pan
  • Patent number: 11146159
    Abstract: A brushless motor includes a stator (26) having six slots (30), and a rotor having two poles. The rotor is adapted to rotate with respect to the stator. By adopting a 6-slots-2-poles structure, the brushless motor effectively reduces operational noise due to iron loss and unbalanced pull. As a result, the working life of the motor can be improved.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: October 12, 2021
    Assignee: TTI (Macao Commercial Offshore) Limited
    Inventors: Hei Man Raymond Lee, Nan Wang, Zheng Li, Li Feng Wang
  • Publication number: 20210288048
    Abstract: Various embodiments of the present disclosure are directed towards a method to embed planar field-effect transistor (FETs) with fin field-effect transistors (finFETs). A semiconductor substrate is patterned to define a mesa and a fin. A trench isolation structure is formed overlying the semiconductor substrate and surrounding the mesa and the fin. A first gate dielectric layer is formed on the mesa, but not the fin. The trench isolation structure recessed around the fin, but not the mesa, after the forming the first gate dielectric layer. A second gate dielectric layer is deposited overlying the first gate dielectric layer at the mesa and further overlying the fin. A first gate electrode is formed overlying the first and second gate dielectric layers at the mesa and partially defining a planar FET. A second gate electrode is formed overlying the second gate dielectric layer at the fin and partially defining a finFET.
    Type: Application
    Filed: April 27, 2020
    Publication date: September 16, 2021
    Inventors: Harry-Hak-Lay Chuang, Wei Cheng Wu, Li-Feng Teng, Li-Jung Liu
  • Publication number: 20210229218
    Abstract: The present disclosure provides a laser processing device and a processing method for forming a fine structure on a substrate. The laser processing device includes a laser, a stage, an optical system, a pattern generation system, and a control system. The laser emits laser light. The stage supports the substrate. The optical system guides the laser light emitted by the laser to the substrate, thereby irradiating a light beam to the substrate, and the light beam is inclined relative to a surface of the substrate. The pattern generation system prepares a processing pattern of the fine structure. The control system controls the laser, the stage, and the optical system according to the processing pattern.
    Type: Application
    Filed: January 19, 2021
    Publication date: July 29, 2021
    Applicant: SHANGHAI INDUSTRIAL ยต TECHNOLOGY RESEARCH INSTITUTE
    Inventors: LI FENG, SHINAN WANG
  • Publication number: 20210202721
    Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate, a second dielectric layer disposed between the floating gate and the control gate and having one of a silicon oxide layer, a silicon nitride layer and multilayers of silicon oxide and silicon nitride, and an erase gate and a select gate. The erase gate and the select gate include a stack of a bottom polysilicon layer and an upper metal layer.
    Type: Application
    Filed: March 15, 2021
    Publication date: July 1, 2021
    Inventors: Wei Cheng WU, Li-Feng TENG
  • Publication number: 20210202513
    Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate. A second dielectric layer is disposed between the floating gate and the control gate, having one of a silicon nitride layer, a silicon oxide layer and multilayers thereof. A third dielectric layer is disposed between the second dielectric layer and the control gate, and includes a dielectric material having a dielectric constant higher than silicon nitride.
    Type: Application
    Filed: March 15, 2021
    Publication date: July 1, 2021
    Inventors: Wei Cheng WU, Li-Feng TENG
  • Publication number: 20210136328
    Abstract: An endoscopic grabber includes a proximal housing, a distal assembly, a flexible shaft extending between the proximal housing and the distal assembly, a flexible member within the flexible shaft having a distal end portion connected to the distal assembly and a proximal end portion connected to the proximal housing, and a camera within the distal assembly. A distal end portion of the flexible member is movably disposed within the distal assembly. A proximal end portion of the flexible member is connected to an actuator within the proximal housing. Actuation of the proximal end portion moves the distal end portion of the flexible member such that one or more elongate arms extending from the distal end portion deforms to form part of a grabber. The camera is configured to capture an image including a tip portion of the elongate arm. The elongate arms are configured to grab a target object.
    Type: Application
    Filed: November 3, 2020
    Publication date: May 6, 2021
    Applicant: Saunders Midwest LLC
    Inventors: Michael R. BARTHEL, Douglas A. SPITLER, Dennis W. GILLOGLY, Li FENG
  • Publication number: 20210118895
    Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate and a second dielectric layer disposed between the floating gate and the control gate. The second dielectric layer includes one of a silicon oxide layer, a silicon nitride layer and a multi-layer thereof. The first dielectric layer includes a first-first dielectric layer formed on the substrate and a second-first dielectric layer formed on the first-first dielectric layer. The second-first dielectric layer includes a dielectric material having a dielectric constant higher than silicon nitride.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Inventors: Wei Cheng WU, Li-Feng TENG
  • Patent number: 10950611
    Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate. A second dielectric layer is disposed between the floating gate and the control gate, having one of a silicon nitride layer, a silicon oxide layer and multilayers thereof. A third dielectric layer is disposed between the second dielectric layer and the control gate, and includes a dielectric material having a dielectric constant higher than silicon nitride.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: March 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei Cheng Wu, Li-Feng Teng
  • Patent number: 10950715
    Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate, a second dielectric layer disposed between the floating gate and the control gate and having one of a silicon oxide layer, a silicon nitride layer and multilayers of silicon oxide and silicon nitride, and an erase gate and a select gate. The erase gate and the select gate include a stack of a bottom polysilicon layer and an upper metal layer.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: March 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei Cheng Wu, Li-Feng Teng
  • Patent number: 10943996
    Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate, a second dielectric layer disposed between the floating gate and the control gate and having one of a silicon oxide layer, a silicon nitride layer and multilayers of silicon oxide and silicon nitride, and an erase gate and a select gate. The erase gate and the select gate include a stack of a bottom polysilicon layer and an upper metal layer.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: March 9, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei Cheng Wu, Li-Feng Teng
  • Publication number: 20210026591
    Abstract: An audio transmission device coupled to an electronic device and including a detection circuit, a vendor-defined class circuit, and an audio class circuit is provided. The detection circuit detects an external sound to generate an input voice. The vendor-defined class circuit provides a first voice signal to the electronic device according to the input voice. An audio processing application program of the electronic device processes the first voice signal to generate a processed voice to the vendor-defined class circuit. The audio class circuit receives the processed voice from the vendor-defined class circuit, uses the processed voice as a second voice signal, and provides the second voice signal to the media manager of the electronic device.
    Type: Application
    Filed: June 3, 2020
    Publication date: January 28, 2021
    Inventors: Chih-Hsien LIN, Chin-Sung HSU, Li-Feng PAN
  • Patent number: 10879253
    Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate and a second dielectric layer disposed between the floating gate and the control gate. The second dielectric layer includes one of a silicon oxide layer, a silicon nitride layer and a multi-layer thereof. The first dielectric layer includes a first-first dielectric layer formed on the substrate and a second-first dielectric layer formed on the first-first dielectric layer. The second-first dielectric layer includes a dielectric material having a dielectric constant higher than silicon nitride.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei Cheng Wu, Li-Feng Teng
  • Publication number: 20200381442
    Abstract: Various embodiments of the present application are directed to an IC device and associated forming methods. In some embodiments, a memory region and a logic region are integrated in a substrate. A memory cell structure is disposed on the memory region. A plurality of logic devices disposed on a plurality of logic sub-regions of the logic region. A first logic device is disposed on a first upper surface of a first logic sub-region. A second logic device is disposed on a second upper surface of a second logic sub-region. A third logic device is disposed on a third upper surface of a third logic sub-region. Heights of the first, second, and third upper surfaces of the logic sub-regions monotonically decrease. By arranging logic devices on multiple recessed positions of the substrate, design flexibility is improved and devices with multiple operation voltages are better suited.
    Type: Application
    Filed: October 29, 2019
    Publication date: December 3, 2020
    Inventors: Wei Cheng Wu, Li-Feng Teng
  • Publication number: 20200371980
    Abstract: A USB hub and an operating method thereof are provided. The USB hub includes a first USB connector coupled to a first device, a second USB connector coupled to a second device, a first power switch, a second power switch, a power converter, and a third power switch. The first power switch has a first end coupled to a power pin of the first USB connector. The second power switch has a first end coupled to a second end of the first power switch, and a second end coupled to a power pin of the second USB connector. The power converter has an input coupled to the second end of the first power switch. The third power switch has a first end coupled to an output of the power converter, where a second end of the third power switch is coupled to the power pin of the second USB connector.
    Type: Application
    Filed: May 21, 2020
    Publication date: November 26, 2020
    Applicant: VIA LABS, INC.
    Inventor: Li-Feng Pan
  • Publication number: 20200225307
    Abstract: Exemplary method, system and computer-accessible medium can be provided which facilitates an acquisition of radial data, which can be continuous, with an exemplary golden-angle procedure and reconstruction with arbitrary temporal resolution at arbitrary time points. According to such exemplary embodiment, such procedure can be performed with a combination of compressed sensing and parallel imaging to offer a significant improvement, for example in the reconstruction of highly undersampled data. It is also possible to provide an exemplary procedure for highly-accelerated dynamic magnetic resonance imaging using Golden-Angle radial sampling and multicoil compressed sensing reconstruction, called Golden-angle Radial Sparse Parallel MRI (GRASP).
    Type: Application
    Filed: March 30, 2020
    Publication date: July 16, 2020
    Inventors: Ricardo Otazo, Li Feng, Tobias Block, Hersh Chandarana, Leon Axel, Daniel K. Sodickson
  • Publication number: 20200226481
    Abstract: In some variations, methods for managing medical information may include receiving through a user interface on a user computing device a user selection of medical content and a user selection of a tag to be associated with the medical content, and modifying a machine learning associations model based on the medical content and tag, wherein the machine learning associations model predicts queried medical content based on user input received through the conversation simulator. In some variations, methods for managing medical information may include receiving a medical content record specific to a user group, receiving at least one tag to be associated with the medical content record, and modifying a machine learning associations model based on the medical content record and the at least one tag, wherein the machine learning associations model predicts queried medical content based on user input received through a user interface.
    Type: Application
    Filed: January 14, 2020
    Publication date: July 16, 2020
    Inventors: Yan Chuan SIM, Dorothea Li Feng KOH, Md Ihtimam Hossain BHUIYAN
  • Publication number: 20200149296
    Abstract: A leveling spacer may include a base, a connecting piece having a breakage portion, a threaded shaft and a pressure applicator. In one embodiment, the breakage portion of the connecting piece is disposed at right angles to the base, and the other end thereof is connected with the threaded shaft. The pressure applicator is configured to engage and remove the threaded shaft, and more specifically, the pressure applicator may include a female threaded chamber to correspondingly engage with the threaded shaft. When the pressure applicator is rotated down the shaft, it can also apply pressure to level and immobilize the substrate.
    Type: Application
    Filed: November 12, 2019
    Publication date: May 14, 2020
    Applicant: Paragon Industries, Inc.
    Inventors: Eddie Bedrosian, Grzegorz Tracz, Li Feng
  • Patent number: 10630309
    Abstract: A signal receiver includes a multiplexer, a sub-sample analog-to-digital converter (ADC) and a received signal strength indicator (RSSI) estimator for a signal receiver with multiple stage cascade amplifiers architecture. The multiplexer may select one of the input signal of each stage of cascade amplifiers or the last stage output signal of cascade amplifiers as a selected signal according to a selection signal. The sub-sample ADC may perform a sub-sampling operation using the selected signal to generate sampled data. The RSSI estimator may calculate a RSSI value corresponding to the selected signal according to the sampled data.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: April 21, 2020
    Assignee: Uniband Electronic Corp.
    Inventors: Yiping Fan, Li-Feng Chen
  • Patent number: D931294
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: September 21, 2021
    Assignee: 5 Health Inc.
    Inventor: Dorothea Li Feng Koh