Patents by Inventor Li Jiang

Li Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180342632
    Abstract: A solar battery includes a first electrode, a second electrode, a solar cell, an insulating layer and a gate electrode. The solar cell includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342296
    Abstract: A phase change memory apparatus comprises at least one heating layer; and at least one phase change layer comprising a vanadium dioxide layer, wherein each of the at least one phase change layer is set corresponding to each of the at least one heating layer, the at least one heating layer is configured to heat the at least one phase change layer.
    Type: Application
    Filed: February 2, 2018
    Publication date: November 29, 2018
    Inventors: JI-WEI HOU, ZHI-QUAN YUAN, KAI LIU, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342690
    Abstract: A light detector includes a semiconductor element, a first electrode, a second electrode and a current detecting element electrically connected with each other to form a circuit. The semiconductor element includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342673
    Abstract: A phase change memory apparatus comprises at least one heating layer; and at least one phase change layer comprising a vanadium dioxide layer, wherein each of the at least one phase change layer is set corresponding to each of the at least one heating layer, the at least one heating layer is configured to heat the at least one phase change layer.
    Type: Application
    Filed: February 2, 2018
    Publication date: November 29, 2018
    Inventors: JI-WEI HOU, ZHI-QUAN YUAN, KAI LIU, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342580
    Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor element, an insulating layer and a third electrode. The semiconductor element is electrically connected to the first electrode and the second electrode. The third electrode is insulated from the semiconductor structure, the first electrode and the second electrode through the insulating layer. The semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342679
    Abstract: A semiconductor structure includes a semiconductor layer, a carbon nanotube and a conductive film. The semiconductor layer includes a first surface and a second surface. A thickness of the semiconductor layer ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method. The carbon nanotube, the semiconductor layer and the conductive film are stacked with each other to form a three-layered stereoscopic structure.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180342579
    Abstract: A semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. A thickness of the semiconductor structure ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method. The carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 29, 2018
    Inventors: JIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180337335
    Abstract: A light detection element including: a carbon nanotube structure; a first electrode and a second electrode, electrically connected to the carbon nanotube structure; wherein the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, one of the two metallic carbon nanotube segments is electrically connected to the first electrode, the other one of the two metallic carbon nanotube segments is electrically connected to the second electrode.
    Type: Application
    Filed: May 14, 2018
    Publication date: November 22, 2018
    Inventors: JIANG-TAO WANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180337272
    Abstract: A thin film transistor including: an insulating substrate; a gate electrode, located on the insulating substrate; a gate insulating layer, located on the gate electrode; a carbon nanotube structure, located on the gate insulating layer; wherein the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, one of the metallic carbon nanotube segments is used as a source electrode, the other one of the metallic carbon nanotube segments is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel.
    Type: Application
    Filed: May 14, 2018
    Publication date: November 22, 2018
    Inventors: JIANG-TAO WANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180337338
    Abstract: A carbon nanotube array with equal or other ratio of semiconductive to conductive elements in integrated form including: a plurality of carbon nanotubes arranged in an array, wherein each carbon nanotube includes a semiconducting carbon nanotube segment and a metallic carbon nanotube segment, and the semiconducting carbon nanotube segment and the metallic carbon nanotube segment are connected with each other.
    Type: Application
    Filed: May 14, 2018
    Publication date: November 22, 2018
    Inventors: JIANG-TAO WANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180334387
    Abstract: A method of making carbon nanotubes with equal or other ratio of semiconductive to conductive elements in integrated form includes: depositing a catalyst layer on a substrate and heating same in a reaction furnace to a predetermined temperature. A carbon source gas and a protective gas are introduced to grow a plurality of carbon nanotube segments, some carbon nanotube segments being conductive metallic. A positive electric field is applied to the plurality of carbon nanotube segments, wherein the catalyst layer is positively charged and the positive electric field is reversed to the negative, to grow a second carbon nanotube segment structure from the metallic carbon nanotube segments. The direction of the negative electric field is along a second direction and the second carbon nanotube segment structure then comprises a plurality of semiconducting carbon nanotube segments.
    Type: Application
    Filed: May 14, 2018
    Publication date: November 22, 2018
    Inventors: JIANG-TAO WANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180333901
    Abstract: A method for making a carbon nanotube composite structure is related. A substrate having a first surface is provided. A carbon nanotube structure including a plurality of carbon nanotubes is placed on the first surface, wherein the plurality of carbon nanotubes is in direct contact with the first surface. A monomer solution is coated to the carbon nanotube structure, wherein the monomer solution is formed by dispersing a monomer into an organic solvent. The monomer is polymerized, and then the substrate is removed.
    Type: Application
    Filed: December 15, 2017
    Publication date: November 22, 2018
    Inventors: WEN NING, ZHEN-HE WANG, PENG LIU, SHI-YONG YANG, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180334756
    Abstract: An epitaxial growing device to increase the speed of epitaxial deposition comprises a cavity comprising a reaction chamber, a gas supply unit, a vacuum pumping unit, a first electrode, a second electrode, and a carbon nanotube structure. A gas supply unit and the vacuum pumping unit are connected to the reaction chamber, the first electrode, the second electrode, and the carbon nanotube structure being located in the reaction chamber. The carbon nanotube structure is electrically connected to the first electrode and the second electrode and suspended through the first electrode and the second electrode and is heatable in itself. A method for growing an epitaxial layer using such device is also provided.
    Type: Application
    Filed: April 17, 2018
    Publication date: November 22, 2018
    Inventors: PENG LEI, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180337337
    Abstract: A photoelectric conversion device including a photoelectric conversion module, wherein the photoelectric conversion module includes a carbon nanotube structure and a cover structure, the carbon nanotube structure includes a carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, the cover structure covers only a portion of the semiconducting carbon nanotube segment, the part area is a covered area.
    Type: Application
    Filed: May 14, 2018
    Publication date: November 22, 2018
    Inventors: JIANG-TAO WANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Patent number: 10132767
    Abstract: A method for in-situ measuring electrical properties of carbon nanotubes includes placing a first electrode in a chamber, wherein the first electrode defines a cavity. A growth substrate is suspend inside of the cavity, and a catalyst layer is located on the growth substrate. A measuring meter having a first terminal and a second terminal opposite to the first terminal is provided. The first terminal is electrically connected to the first electrode, and the second terminal is electrically connected to the growth substrate. A carbon source gas, a protective gas, and hydrogen are supplied to the cavity, to grow the carbon nanotubes on the catalyst layer. The electrical properties of the carbon nanotubes are obtained by the measuring meter.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: November 20, 2018
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Jiang-Tao Wang, Xiang Jin, Peng Liu, Yang Wei, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 10135035
    Abstract: A method for forming an organic light emitting diode array is provided. A substrate is provided. A plurality of first electrodes is formed on a substrate surface. A patterned mask layer is disposed on the substrate surface to cover the substrate and expose at least a portion of each first electrode. An evaporating source is provided. The evaporating source comprises a carbon nanotube film structure and an organic semiconductor material. The evaporating source is spaced from the plurality of first electrodes. The carbon nanotube film structure is heated to gasify the organic light emitting material and form a plurality of organic light emitting layers on a exposed surface of the plurality of first electrodes. A plurality of second electrodes are formed on a surface of the plurality of organic light emitting layers. The patterned mask layer is removed to form an organic light emitting diode array.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: November 20, 2018
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Hao-Ming Wei, Yang Wei, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20180330965
    Abstract: Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication process includes providing a base substrate; forming a carbon-containing dielectric layer over the base substrate; and performing a chemical mechanical polishing (CMP) process on the carbon-containing dielectric layer. The chemical mechanical polishing process includes performing a plurality of polishing processes on the carbon-containing dielectric layer and a weak acid solution is used to clean a polishing pad before and after each of the polishing processes.
    Type: Application
    Filed: May 11, 2018
    Publication date: November 15, 2018
    Inventor: Li JIANG
  • Patent number: 10121564
    Abstract: A method for making a transparent conductive layer comprising: providing a carbon nanotube film comprising a plurality of carbon nanotubes; providing a conductive substrate and applying an insulating layer on the conductive substrate; laying the carbon nanotube film on a surface of the insulating layer, and placing the carbon nanotube film under a scanning electron microscope; adjusting the scanning electron microscope, and taking photos of the carbon nanotube film with the scanning electron microscope; obtaining a photo of the carbon nanotube film, wherein the photo shows the plurality of carbon nanotubes and a background, a plurality of first carbon nanotubes of the plurality of carbon nanotubes have lighter color than a color of the background, a plurality of second carbon nanotubes of the plurality of carbon nanotubes have deeper color than the color of the background; and removing the plurality of second carbon nanotubes.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: November 6, 2018
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Dong-Qi Li, Yang Wei, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20180315940
    Abstract: A photodetector includes a substrate, an interdigital electrode layer and a photoactive layer. The interdigital electrode layer is located or sandwiched between the substrate and the photoactive layer. The interdigital electrode layer includes a first interdigital electrode and a second interdigital electrode. The first interdigital electrode and the second interdigital electrode are spaced from and staggered with each other.
    Type: Application
    Filed: August 25, 2017
    Publication date: November 1, 2018
    Inventors: HAO-MING WEI, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20180315937
    Abstract: A method for forming an organic thin film transistor is provided. An interdigital electrode layer is located on a surface of the insulating substrate. An organic semiconductor layer is formed on a surface of the interdigital electrode layer. An insulating layer is located to cover the organic semiconductor layer. A gate electrode is formed on the insulating layer. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the interdigital electrode layer are spaced from each other. The carbon nanotube film structure is heated to gasify an organic semiconductor material to form the organic semiconductor layer on an interdigital electrode layer surface.
    Type: Application
    Filed: August 28, 2017
    Publication date: November 1, 2018
    Inventors: HAO-MING WEI, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN