Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract: Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

Abstract: Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

Abstract: Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.

Abstract: Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface of the low k dielectric film to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has at least one or more Si—N—Si linkages in the molecular structure.

Abstract: Provided are methods for the deposition and doping of films comprising Si. Certain methods involve depositing a SiN, SiO, SiON, SiC or SiCN film and doping the Si-containing film with one or more of C, B, O, N and Ge by a plasma implantation process. Such doped Si-containing films may have improved properties such as reduced etch rate in acid-based clean solutions, reduced dielectric constant and/or improved dielectric strength.

Abstract: A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

Abstract: High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

Abstract: Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification.

Abstract: A layer of silicon nitride having a thickness from 0.5 nanometers to 2.4 nanometers is deposited on a substrate. A plasma nitridation process is carried out on the layer. These steps are repeated for a plurality of additional layers of silicon nitride, until a predetermined thickness is attained. Such steps can be used to provide a multilayer silicon nitride dielectric formed on a substrate having an upper surface of dielectric material with Cu and other conductors embedded within, and a plurality of steps. The multilayer silicon nitride dielectric has a plurality of individual layers each having a thickness from 0.5 nanometers to 2.4 nanometers, and the multilayer silicon nitride dielectric conformally covers the steps of the substrate with a conformality of at least seventy percent. A multilayer silicon nitride dielectric, and a multilevel back end of line interconnect wiring structure using same, are also provided.

Abstract: In a method of depositing a crystalline germanium layer on a substrate, a substrate is placed in the process zone comprising a pair of process electrodes. In a deposition stage, a crystalline germanium layer is deposited on the substrate by introducing a deposition gas comprising a germanium-containing gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes. In a subsequent treatment stage, the deposited crystalline germanium layer is treated by exposing the crystalline germanium layer to an energized treatment gas or by annealing the layer.

Abstract: Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

Abstract: Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate.

Abstract: The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.