Patents by Inventor Li Yan SIOW

Li Yan SIOW has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEAL RING FOR AL-Ge BONDING
    Publication number: 20190031502
    Abstract: There is provided a method of bonding a first substrate and a second substrate, the method comprising: providing an aluminium (Al) connection having a first width on one side of a first substrate; providing a germanium (Ge) connection having a second width on one side of a second substrate, wherein the second width is larger than the first width; and bonding the Al connection on the first substrate and the Ge connection on the second substrate by eutectic bonding of at least a portion of the Al connection and at least a portion of the Ge connection to form an Al—Ge eutectic melt, wherein the Al—Ge eutectic melt is confined within the second width of the Ge connection.
    Type: Application
    Filed: January 26, 2017
    Publication date: January 31, 2019
    Inventors: Vivek CHIDAMBARAM, Li Yan SIOW, Qing Xin ZHANG, Sunil WICKRAMANAYAKA
  • Method for low temperature bonding of wafers
    Patent number: 10134607
    Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: November 20, 2018
    Assignee: Agency for Science, Technology and Research
    Inventors: Vivek Chidambaram, Sunil Wickramanayaka, Jinghui Xu, Zhipeng Ding, Li Yan Siow
  • A Method For Low Temperature Bonding Of Wafers
    Publication number: 20170178929
    Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.
    Type: Application
    Filed: July 9, 2015
    Publication date: June 22, 2017
    Inventors: Vivek CHIDAMBARAM, Sunil WICKRAMANAYAKA, Jinghui XU, Zhipeng DING, Li Yan SIOW