Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of slicing wafers from a monocrystalline semiconductor ingot includes attaching a circumferential edge of the ingot to a bond beam and positioning sacrificial disks adjacent longitudinal end faces of the ingot. One sacrificial disk is positioned adjacent each of the longitudinal end faces. The method also includes connecting the bond beam to a wire saw that includes a wire web and performing a slicing operation on the ingot by operating the wire saw to drive the wire web and move the bond beam and the ingot in a movement direction towards the wire web to slice the wafers from the ingot.

Abstract: A system for slicing wafers from a monocrystalline semiconductor ingot includes a wire saw, a bond beam, the monocrystalline semiconductor ingot, and two sacrificial disks. The wire saw includes a wire web and wire guides operable to drive the wire web during a slicing operation. The bond beam is connected to the wire saw. The wire saw is operable to move the bond beam in a movement direction towards the wire web during the slicing operation to slice the wafers from the ingot. The ingot includes longitudinal end faces and a circumferential edge extending between the longitudinal end faces. The ingot is attached to the bond beam along the circumferential edge. One sacrificial disk is positioned adjacent each of the longitudinal end faces of the ingot to inhibit uncontrolled breakage of the wafers during the slicing operation.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A polishing apparatus for double-sided polishing of semiconductor wafers including a first platen, a second platen, a wafer carrier, and a controller is disclosed. The controller is configured to perform operations including determining whether a batch of the semiconductor wafers is loaded on the wafer carrier for double-sided polishing and retrieving specification for the batch of semiconductor wafers. The operations include based on the retrieved specification, determining an amount of tuning required for one or more flatness control parameters, and based on the amount of tuning required for the one or more flatness control parameters, identifying, or generating a recipe to perform the double-sided polishing on the batch of the semiconductor wafers. The operations include storing statistical process control (SPC) feedback data in a database to perform one or more additional iterations of the double-sided polishing on the batch of the semiconductor wafers.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A hidden-type automobile child safety seat assembly has three types of safety seats respectively mounted in different portions of the rear bench of a passenger car and includes: one first safety seat, one second safety seat and one third safety seat. The first seating portion is pivotally connected to the bottom of the rear bench. The second safety seat comprises a second seating portion, and a protective bar. The second seating portion and the protective bar are pivotally connected to the back of the rear bench. The third safety seat comprises a third seating portion. The third seating portion is pivotally connected to the back of the rear bench. With this arrangement, it is not necessary to spend time and labor to install the child safety seat. Therefore, it is very convenient to use this inventive child safety seat.