Abstract: A processing method of formic acid soldering includes providing a solder, performing a formic acid providing step, performing a soldering step and performing a cooling step. The solder is disposed at a soldering object. In the formic acid providing step, a water-containing formic acid vapor extracted from a formic acid source is introduced to a soldering object so as to form a water-containing formic acid atmosphere surrounding the soldering object. In the soldering step, the solder and the soldering object are soldered in the water-containing formic acid atmosphere at a soldering temperature so as to form a soldered object with high temperature. In the cooling step, the soldered object with high temperature is cooled by a cooling method so as to form a soldered object. A range of a moisture content of the formic acid source is greater than or equal to 0.1 wt % and less than 15 wt %.

Abstract: A nozzle dispenses a material, such as an adhesive, primer, paint, or other coating, through a dispensing port on to a substrate. The spray pattern provided by the nozzle defines, at least in part, an application pattern of the material on to the substrate. An air mask port integral with the nozzle or a separate nozzle expels a mask stream of pressurized gas. The mask stream projects toward the substrate to aid in limiting an application of the material beyond an application line on the substrate. The air-mask port and the dispensing port may be moved relative to the substrate and/or the application line such that the mask stream provides a barrier to the material being applied.

Abstract: An inspection system includes an excitation light source, a voltage-sensing film, an illumination light source, an image capture device. The excitation light source provides an excitation beam to light-emitting diodes to generate open-circuit voltages. The voltage-sensing film is at a top side of the light-emitting diodes and includes a voltage-sensing medium layer and a first electrode layer. The first electrode layer is in the voltage-sensing medium layer to provide a gain effect of the open-circuit voltages, so that the voltage-sensing medium layer senses the open-circuit voltages, and a display of the voltage-sensing medium layer is changed with a portion or all of the open-circuit voltages. The illumination light source provides an illumination beam to the voltage-sensing film to generate a sensing image according to a display change. The image capture device is on a transmission path of the sensing image and receives the sensing image to generate an inspection result.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE sends a request message to a core network. The request message requests joining one or more requested multicast broadcast service (MBS) sessions. The UE receives a response message from the core network. The response message contains received MBS information indicating one or more admitted MBS sessions. The received MBS information includes a respective IP address type (IPAT) field. The IPAT field indicates a type of an IP address corresponding to each of the one or more admitted MBS sessions. The UE decodes the IP address corresponding to each of the one or more admitted MBS sessions according to the type indicated by the respective IPAT field.

Abstract: The eyeglasses includes a glasses frame and two temples. The glasses frame has two opposite ends. Each of the two temples has a front end connected pivotally to a respective one of the two opposite ends of the glasses frame. Each of the two temples have a section that is flexible so that, by applying lateral forces to the two temples, the temples are convertible between an outwardly curved state where rear ends of the two temples are spaced apart from each other at a first distance, and an inwardly curved state where the rear ends of the two temples are spaced apart from each other at a second distance that is smaller than the first distance.

Abstract: According to the present disclosure, a measuring method of liquid mixture purity includes steps as follows. A storage tank is provided, wherein the storage tank is configured for storing a liquid mixture including formic acid and water. A calculating unit is provided, wherein a plurality of formic acid purity values are saved in the calculating unit. A pressure-decreasing and heating step is performed by reducing a pressure of the storage tank and heating the storage tank. A measuring step is performed by measuring in the inner space of the storage tank to obtain a pressure value, and measuring the liquid mixture simultaneously to obtain a temperature value. A calculating step is performed by inputting the pressure value and the temperature value into the calculating unit, wherein the calculating unit outputs one of the formic acid purity values corresponding thereto.

Abstract: A semiconductor device includes a metal layer, a ground plane formed on the metal layer, a first inductor formed on the metal layer, and a first isolation region formed on the metal layer and arranged to separate the first inductor from the ground plane. The first isolation region includes a first main area surrounding the first inductor, and at least one first slot extended from the first main area.

Abstract: A semiconductor device includes a substrate, a first transistor disposed on the substrate, a second transistor in proximity to the first transistor on the substrate, at least one interlayer dielectric layer covering the first transistor and the second transistor, a first stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the first transistor, and a second stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the second transistor.

Abstract: A headlight is disclosed, comprising a headlight body, a temperature sensor, an IR module, a low beam module, and a controller. The headlight body has a housing and a lampshade. The lampshade has a light-absorbing and heating layer. The temperature sensor is configured inside the headlight body, to detect the temperature of the lamp. The IR module is a wide-angle LED lamp, positioned inside the headlight body, and It directly irradiates toward the lampshade. The low beam module is configured inside the headlight body, emitting toward the lampshade, and an emitting direction of the low beam module crosses an irradiating direction of the IR module. The controller is electrically connected to the IR module and the temperature sensor, and turns on/off the IR module based on the temperature of the lamp.

Abstract: A processing method of formic acid soldering includes providing a solder, performing a formic acid providing step, performing a soldering step and performing a cooling step. The solder is disposed at a soldering object. In the formic acid providing step, a water-containing formic acid vapor extracted from a formic acid source is introduced to a soldering object so as to form a water-containing formic acid atmosphere surrounding the soldering object. In the soldering step, the solder and the soldering object are soldered in the water-containing formic acid atmosphere at a soldering temperature so as to form a soldered object with high temperature. In the cooling step, the soldered object with high temperature is cooled by a cooling method so as to form a soldered object. A range of a moisture content of the formic acid source is greater than or equal to 0.1 wt % and less than 15 wt %.

Abstract: Systems and methods for monitoring the quality of a surface treatment applied to an article in a manufacturing process are provided. A surface treatment may be applied to at least a portion of an article. A thermal profile of the article may be obtained and used to determine temperature indications of different regions of the article to which the surface treatment has been applied. A standard model of the article may be obtained that includes model regions having model temperature ranges. The temperature indications of the article can be compared with the model temperature ranges to determine if any temperature indications are outside of a corresponding model temperature range. The article may be a shoe part. The surface treatments may include the application of heat, plasma, dye, paint, primer, and/or the application of other materials, substances, and/or processes.

Abstract: A light-emitting diode chip is described. The light-emitting diode chip includes a light-emitting structure, a first electrode, and a second electrode. The first electrode is disposed on the light-emitting structure and is electrically connected to the light-emitting structure. The second electrode is disposed on the light-emitting structure, and the second electrode and the first electrode are located on the same side of the light-emitting structure, wherein the second electrode is electrically connected to the light-emitting structure. The light-emitting diode chip has a first surface and a second surface which are opposite to each other, and a side surface connected between the first surface and the second surface. The side surface is substantially perpendicular to the first surface and the second surface, and an included angle between the side surface and the first surface is between 86 degrees and 94 degrees.

Abstract: A micro light-emitting film structure includes a first conductivity type semiconductor film, a light-emitting film, a second conductivity type semiconductor film, a first contact electrode, and a second contact electrode. The first conductivity type semiconductor film has first and second surfaces opposite to each other. The second surface includes an asperity. A height difference of relief of the asperity is less than or equal to 1 ?m. The light-emitting film is disposed on the first surface. The second conductivity type semiconductor film is connected to the light-emitting film sandwiched between the second conductivity type semiconductor film and the first conductivity type semiconductor film. The first contact electrode is connected to the first conductivity type semiconductor film. The second contact electrode is connected to the second conductivity type semiconductor film. A thickness of the micro light-emitting film structure is equal to or smaller than 10 ?m.

Abstract: A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber. A flow of the process gas is controlled by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port.

Abstract: A clamping device includes first and second clamping components and at least one elastic component. The first clamping component includes a first clamping portion and two first pivot portions connected to the first clamping portion. The second clamping component includes a second clamping portion and two second pivot portions connected to the second clamping portion. The second pivot portions are pivotally connected to the first pivot portions respectively, such that the first and second clamping components are capable of rotating relative to each other to present a first state and a second state. The elastic component is connected to the first clamping component and the second clamping component. When the first and second clamping components are in the second state, the elastic component provides an elastic force for the first clamping portion and the second clamping portion to be restored to the first state to clamp an object.

Abstract: A sealing device adapted for an object to be disposed through is provided. The sealing device includes a casing, a sealing elastic member, and a pressing member. The casing has an accommodating groove and a penetrating via communicated with the accommodating groove. The sealing elastic member is detachably disposed in the accommodating groove and has a through hole aligned with the penetrating via. The sealing elastic member is adapted to be compressed along an axis. The through hole has a first inner diameter before compression and a second inner diameter after compression. An outer dimension of the object is less than or equal to the first inner diameter and greater than the second inner diameter. The pressing member is detachably disposed at the casing and presses against the sealing elastic member, so that the compressed sealing elastic member is fixed in the accommodating groove.

Abstract: The present invention provides a method of generating dummy patterns and calibration kits, including steps of generating devices-under-test (DUTs) using a point of said chip window layer as reference point in a unit cell, generating calibration kits corresponding to the DUTs using the point as reference point in corresponding unit cells, generating DUT dummy patterns for each DUTs individually in the unit cell, copying the DUT dummy patterns in the unit cell to the corresponding calibration kits in the corresponding unit cells using the point as reference point, and merging all of the unit cell and corresponding unit cells into a final chip layout.

Abstract: A polyimide precursor includes a repeating unit of formulae (I) and (II): where R1 and R3 are each a tetravalent group of a tetracarboxylic dianhydride residue, and R2 and R4 are respectively a divalent group of a residue of a first-type diamine and a divalent group of a residue of a second-type diamine. The first-type diamine is represented by formula (III), and the second-type diamine is represented by formula (IV). A resin composition including the polyimide precursor, a polyimide formed from the polyimide precursor, and use of the polyimide are also disclosed.

Abstract: A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.

Abstract: An embedded component structure includes a board, an electronic component, and a dielectric material layer. The board has a through cavity. The board includes an insulating core layer and a conductive member. The insulating core layer has a first surface and a second surface opposite thereto. The through cavity penetrates the insulating core layer. The conductive member extends from a portion of the first surface along a portion of the side wall of the through cavity to a portion of the second surface. The electronic component includes an electrode. The electronic component is disposed in the through cavity. The dielectric material layer is at least filled in the through cavity. The connection circuit layer covers and contacts the conductive member and the electrode. A manufacturing method of an embedded component structure is also provided.