Abstract: A MEMS micromirror includes a mirror surface driving structure which is positioned on a substrate and includes two L-shaped structures in head-to-tail arrangement. Each L-shaped structure includes a second torsion beam, an L-shaped transverse plate and a second comb-shaped structure. The first driving electrode is provided on the substrate at a position under a head end of the L-shaped transverse plate, the head end of the L-shaped transverse plate is rotatable with support of the second torsion beam, and a tail end of the L-shaped transverse plate is connected with the second comb-shaped structure. The micromirror surface layer is disposed above the mirror surface driving structure, the first torsion beam is fixed by the substrate and supports two sides of the micromirror surface layer, and two sides, corresponding to the second comb-shaped structures, of the micromirror surface layer are provided with first comb-shaped structures, respectively.

Abstract: A MEMS micromirror includes a mirror surface driving structure which is positioned on a substrate and includes two L-shaped structures in head-to-tail arrangement. Each L-shaped structure includes a second torsion beam, an L-shaped transverse plate and a second comb-shaped structure. The first driving electrode is provided on the substrate at a position under a head end of the L-shaped transverse plate, the head end of the L-shaped transverse plate is rotatable with support of the second torsion beam, and a tail end of the L-shaped transverse plate is connected with the second comb-shaped structure. The micromirror surface layer is disposed above the mirror surface driving structure, the first torsion beam is fixed by the substrate and supports two sides of the micromirror surface layer, and two sides, corresponding to the second comb-shaped structures, of the micromirror surface layer are provided with first comb-shaped structures, respectively.

Abstract: A process for fabricating a symmetrical MEMS accelerometer.

Abstract: A process for fabricating a symmetrical MEMS accelerometer.

Abstract: A method for fabricating a symmetrical MEMS accelerometer. For each half, etch multiple holes on the bottom of an SOI wafer; form multiple hollowed parts on the top of a silicon wafer; form silicon dioxide on the top and bottom of the silicon wafer; bond the top of the silicon wafer with the bottom of the SOI wafer; deposit silicon nitride on the bottom of the silicon wafer, remove parts of the silicon nitride and silicon dioxide to expose the bottom of the silicon wafer; etch the exposed bottom of the silicon wafer; reduce the thickness of the SOI wafer; remove the silicon nitride and exposed bottom. Bond the two halves along their bottom surface to form the accelerometer. Form a bottom cap including electrodes. Bond the bottom cap and the accelerometer. Deposit metal on top of the silicon wafer.

Abstract: A process for fabricating a symmetrical MEMS accelerometer.

Abstract: A symmetrical MEMS accelerometer. The accelerometer includes a top half and a bottom half bonded together to form the frame and the mass located within the frame. The frame and the mass are connected through resilient beams. A plurality of hollowed parts and the first connecting parts are formed on the top and bottom side of the mass, respectively. The second connecting parts are formed on the top and bottom side of the frame, respectively. The resilient beams connect the first connecting part with the second connecting part. Several groups of comb structures are formed on top of the hollowed parts. Each comb structure includes a plurality of moveable teeth and fixed teeth. The moveable teeth extend from the first connecting part and the fixed teeth extend from the second connecting part. Capacitance is formed between the movable teeth and the fixed teeth. Since the accelerometer is symmetrical with a large mass, it has a large capacitance with a low damping force.

Abstract: A symmetrical MEMS accelerometer. The accelerometer includes a top half and a bottom half bonded together to form the frame and the mass located within the frame. The frame and the mass are connected through resilient beams. A plurality of hollowed parts and the first connecting parts are formed on the top and bottom side of the mass, respectively. The second connecting parts are formed on the top and bottom side of the frame, respectively. The resilient beams connect the first connecting part with the second connecting part. Several groups of comb structures are formed on top of the hollowed parts. Each comb structure includes a plurality of moveable teeth and fixed teeth. The moveable teeth extend from the first connecting part and the fixed teeth extend from the second connecting part. Capacitance is formed between the movable teeth and the fixed teeth. Since the accelerometer is symmetrical with a large mass, it has a large capacitance with a low damping force.

Abstract: An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism formed in an active semiconductor layer and separated from a handle layer by a dielectric layer, and a silicon cover plate having a handle layer with a dielectric layer being bonded to portions of the active layer. Pit are included in one of the handle layers and corresponding dielectric layers to access electrical leads on the active layer. Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

Abstract: Methods for creating a microelectromechanical systems (MEMS) device using a single double, silicon-on-insulator (SOI) wafer. The double SOI wafer includes at least a base layer of silicon, a first layer of silicon, and a second layer of silicon, the layers of silicon are separated by an oxide layer. A stationary electrode with rigid support beams is formed into the second layer of silicon. A proof mass and at least one spring are formed into the first layer of silicon. The proof mass is separated from the stationary electrode by a first gap and the proof mass is separated from the base silicon layer by a second gap.

Abstract: Methods for creating a microelectromechanical systems (MEMS) device using a single double, silicon-on-insulator (SOI) wafer. The double SOI wafer includes at least a base layer of silicon, a first layer of silicon, and a second layer of silicon, the layers of silicon are separated by an oxide layer. A stationary electrode with rigid support beams is formed into the second layer of silicon. A proof mass and at least one spring are formed into the first layer of silicon. The proof mass is separated from the stationary electrode by a first gap and the proof mass is separated from the base silicon layer by a second gap.

Abstract: Methods for creating at least one micro-electromechanical (MEMS) structure in a silicon-on-insulator (SOI) wafer. The SOI wafer with an extra layer of oxide is etched according to a predefined pattern. A layer of oxide is deposited over exposed surfaces. An etchant selectively removes the oxide to expose the SOI wafer substrate. A portion of the SOI substrate under at least one MEMS structure is removed, thereby releasing the MEMS structure to be used in the formation of an accelerometer.

Abstract: Methods for producing a MEMS device from a single silicon-on-insulator (SOI) wafer. An SOI wafer includes a silicon (Si) handle layer, a Si mechanism layer and an insulator layer located between the Si handle and Si mechanism layers. An example method includes etching active components from the Si mechanism layer. Then, the exposed surfaces of the Si mechanism layer is doped with boron. Next, portions of the insulator layer proximate to the etched active components of the Si mechanism layer are removed and the Si handle layer is etched proximate to the etched active components.

Abstract: An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism formed in an active semiconductor layer and separated from a handle layer by a dielectric layer, and a silicon cover plate having a handle layer with a dielectric layer being bonded to portions of the active layer. Pit are included in one of the handle layers and corresponding dielectric layers to access electrical leads on the active layer. Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

Abstract: Methods for creating at least one micro-electromechanical (MEMS) structure in a silicon-on-insulator (SOI) wafer. The SOI wafer with an extra layer of oxide is etched according to a predefined pattern. A layer of oxide is deposited over exposed surfaces. An etchant selectively removes the oxide to expose the SOI wafer substrate. A portion of the SOI substrate under at least one MEMS structure is removed, thereby releasing the MEMS structure to be used in the formation of an accelerometer.

Abstract: Systems and methods fabricate a vertically stacked multi-chip semiconductor device assembly. An exemplary assembly is fabricated by forming a first semiconductor device in a first semiconductor device layer with a first connector located at a first surface of the first semiconductor device layer; forming a second semiconductor device in a second semiconductor device layer with a second connector located at an interior surface of the second semiconductor device layer; forming a via in the first semiconductor device layer extending from the first surface to an opposing second surface of the first semiconductor device layer corresponding to the location of the second connector; and joining the second surface of the first semiconductor device layer and the interior surface of the second semiconductor device layer, wherein the via at the second surface of the first semiconductor device layer is coupled to the second connector of the second semiconductor device.

Abstract: Methods for producing a MEMS device from a single silicon-on-insulator (SOI) wafer. An SOI wafer includes a silicon (Si) handle layer, a Si mechanism layer and an insulator layer located between the Si handle and Si mechanism layers. An example method includes etching active components from the Si mechanism layer. Then, the exposed surfaces of the Si mechanism layer is doped with boron. Next, portions of the insulator layer proximate to the etched active components of the Si mechanism layer are removed and the Si handle layer is etched proximate to the etched active components.

Abstract: An apparatus and method for sensor architecture based on bulk machining of silicon wafers and fusion bond joining which provides a nearly all-silicon, hermetically sealed, microelectromechanical system (MEMS) device. An example device includes a device sensor mechanism formed in an active semiconductor layer and separated from a handle layer by a dielectric layer, and a silicon cover plate having a handle layer with a dielectric layer being bonded to portions of the active layer. Pit are included in one of the handle layers and corresponding dielectric layers to access electrical leads on the active layer. Another example includes set backs from the active components formed by anisotropically etching the handle layer while the active layer has been protectively doped.

Abstract: A MEMS device having a proof mass resiliently mounted above a substrate has projections formed on adjacent surfaces of the mass and substrate. The device is formed by creating a plurality of holes in the upper layer. A substance suitable for removing the intermediate layer without substantially removing the upper layer and substrate is introduced through the holes. A substance removing the upper layer, the substrate, or both, is then introduced through the holes to remove a small amount of the substrate and upper layer. Portions of the intermediate layer between the projections are then removed. The dimple structure fabricated from this process will prevent MEMS device stiction both in its final release and device operation.

Abstract: A method of manufacturing a vertical comb structure for a micro electromechanical (MEMS) device. Tooth structures are formed on a first wafer. A second wafer is then bonded to the tooth structures of the first wafer. The tooth structures are then released to form a comb structure. Forming the tooth structures on the first wafer includes using oxidation, photolithography, etching, epitaxy, and chemical and mechanical polishing to create the tooth structures on the first wafer.