Patents by Inventor Line Vieux-Rochaz

Line Vieux-Rochaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7176679
    Abstract: A method and an apparatus of a magnetic field sensor structure are disclosed. The magnetic field sensor structure is formed by a bridge of four magnetoresistors (1–4), wherein each magnetoresistor has a longitudinal direction, and each magnetoresistor (1–4) is polarised by magnets (15–19). Also, each magnet has a main magnetisation field along an axial magnetisation direction, and a magnetic leakage field. The polarisation magnets (15–19) and the magnetoresistors (1–4) are arranged in the form of layers on the same substrate. In one embodiment, the polarisation magnets (15–19) are at the same level as the magnetoresistors (1–4) wherein the polarisation magnets (15–19) have the same main magnetisation direction, which is contained in the plane of the layers. The magnetoresistors have their longitudinal direction parallel with that of the axial direction of the magnets. In one embodiment, two magnetoresistors are arranged in the axial field of magnets and two others are in the magnet leakage field.
    Type: Grant
    Filed: October 7, 2002
    Date of Patent: February 13, 2007
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Claire Baragatti, Robert Cuchet, Line Vieux-Rochaz
  • Publication number: 20040263163
    Abstract: Magnetic field sensor structure formed by a bridge of four magnetoresistors (1-4) each having a longitudinal direction, each magnetoresistor (1-4) being polarised by magnets (15-19) each having a main magnetisation field along an axial magnetisation direction, and a magnetic leakage field, the polarisation magnets (15-19) and the magnetoresistors (1-4) being arranged in the form of layers on the same substrate, characterised in that the polarisation magnet(s) (15-19) are at the same level as the magnetoresistors (1-4), in that all the polarisation magnets (15-19) have the same main magnetisation direction contained in the plane of the layers and in that the magnetoresistors have their longitudinal direction parallel with that of the axial direction of the magnets, two magnetoresistors being arranged in the axial field of magnets and two others in the magnet leakage field.
    Type: Application
    Filed: April 7, 2004
    Publication date: December 30, 2004
    Inventors: Claire Baragatti, Robert Cuchet, Line Vieux-Rochaz
  • Patent number: 6815827
    Abstract: Electrical connection between two faces of a substrate and manufacturing process. The connection is made by a part (46) of a conducting or semi conducting substrate (20) completely surrounded by at least one electrically insulating trench (32, 36, 44). A contact pad (42) is located on the back face (40) and conducting tracks (38) are located on the front face. The connection is made through the substrate itself. Application to the manufacture of circuits, components, sensors, etc.
    Type: Grant
    Filed: August 26, 2002
    Date of Patent: November 9, 2004
    Assignees: Commissariat a l'Energie Atomique, PHS Mems
    Inventors: Line Vieux-Rochaz, Robert Cuchet, Olivier Girard
  • Patent number: 6522132
    Abstract: At least two magnetoresistors laid out perpendicularly are used. These magnetoresistors are installed in a bridge, the measurement signal being taken from the mid-point of the bridge. This signal is linear over a very wide range. Application to measurement of the orientation of a magnetic field or the angular position of an object.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: February 18, 2003
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Line Vieux-Rochaz, Marie-Hélène Vaudaine, Robert Cuchet, Thierry Braisaz
  • Publication number: 20030022475
    Abstract: Electrical connection between two faces of a substrate and manufacturing process.
    Type: Application
    Filed: August 26, 2002
    Publication date: January 30, 2003
    Inventors: Line Vieux-Rochaz, Robert Cuchet, Olivier Girard
  • Patent number: 6075360
    Abstract: A magnetoresistive component and transducer for use therewith. The magnetoresistive component has a multilayer-type magnetoresistive strip bent in accordance with a repeated geometrical pattern (7a,7b). The pattern has at least one series of substantially parallel sections (7a,7b) for reducing the demagnetizing fields. The magnetoresistive strip (2) is formed from a stack (13) of magnetic metallic material layers (14) separated by non-magnetic metallic material layers (15). The magnetoresistive component is applicable to a transducer for reading information recorded in magnetic form or for detecting weak magnetic fields.
    Type: Grant
    Filed: August 24, 1994
    Date of Patent: June 13, 2000
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean Mouchot, Jean-Marc Fedeli, Line Vieux-Rochaz, Marie-Helene Vaudaine
  • Patent number: 6069476
    Abstract: A magnetic field sensor having a magnetoresistance bridge. The sensor includes two longitudinally connected multilayer magnetoresistances and two transversely connected multilayer magnetoresistances. The two longitudinally connected magnetoresistances are sensitive to the magnetic field to be measured. The four magnetoresistances are connected to a wheatstone bridge.
    Type: Grant
    Filed: March 31, 1998
    Date of Patent: May 30, 2000
    Assignee: Commissariat A L'Energie Atomique
    Inventors: Line Vieux-Rochaz, Jean-Marc Fedeli, Robert Cuchet
  • Patent number: 5821517
    Abstract: The encoder has at least one magnetoresistor (120, 220, 320, 322, 324, 326) and the magnetic support has a succession of magnetized regions (242, 342, 442), characterized in that the magnetic encoder also has a flux guide (154, 254, 354, 454), which has reading pole pieces (256, 256', 356) separated by at least one air gap (252, 352, 452) having a length (g) less than the smallest spacing of the magnetized regions.
    Type: Grant
    Filed: December 1, 1995
    Date of Patent: October 13, 1998
    Assignee: Commissariata l'Energie Atomique
    Inventors: Jean-Marc Fedeli, Miguel Saro, Line Vieux-Rochaz
  • Patent number: 5798895
    Abstract: A magnetic reading head having a magneto resistant element and improved polarization means. The polarization conductor is associated with a supplementary magnetic layer positioned opposite to the magnetoresistant element.
    Type: Grant
    Filed: January 29, 1997
    Date of Patent: August 25, 1998
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Line Vieux-Rochaz, Jean-Marc Fedeli, Philippe Pougnet, Michel Poirier
  • Patent number: 4244750
    Abstract: A basic photovoltaic stack is constituted by a semiconducting layer interposed between a layer forming an ohmic contact and a layer forming a Schottky contact. A second photovoltaic stack having the same structure as the basic stack is formed on this latter and includes one of the layers forming an ohmic or Schottky contact. The layer or layers forming an ohmic contact are connected together so as to constitute a first output terminal of the photovoltaic generator. The layer or layers forming a Schottky contact are connected together so as to constitute a second output terminal of the generator.
    Type: Grant
    Filed: August 1, 1979
    Date of Patent: January 13, 1981
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Andre Chenevas-Paule, Igor Melnick, Line Vieux-Rochaz