Patents by Inventor Ling Ma

Ling Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200051348
    Abstract: Disclosed is a method for access authentication. The method includes: receiving profile information of a visitor through a server, and generating a visitor code and transmitting the same to a visitor terminal, and generating a random code based on a valid visitor code, and receiving a decoding result based on decoding the random code and the visitor code by the visit terminal, and predetermining an access authority for the visitor for a predetermined time as the decoding result is successfully matched.
    Type: Application
    Filed: April 17, 2018
    Publication date: February 13, 2020
    Applicant: JRD Communication (Shenzhen) LTD.
    Inventors: Jia WANG, Ling MA
  • Patent number: 10545763
    Abstract: Detecting data dependencies of instructions associated with threads in a simultaneous multithreading (SMT) scheme is disclosed, including: dividing a plurality of comparators of an SMT-enabled device into groups of comparators corresponding to respective ones of threads associated with the SMT-enabled device; simultaneously distributing a first set of instructions associated with a first thread of the plurality of threads to a corresponding first group of comparators from the plurality of groups of comparators and distributing a second set of instructions associated with a second thread of the plurality of threads to a corresponding second group of comparators from the plurality of groups of comparators; and simultaneously performing data dependency detection on the first set of instructions associated with the first thread using the corresponding first group of comparators and performing data dependency detection on the second set of instructions associated with the second thread using the corresponding seco
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: January 28, 2020
    Assignee: Alibaba Group Holding Limited
    Inventors: Ling Ma, Sihai Yao, Lei Zhang
  • Patent number: 10503785
    Abstract: Apparatus, systems, and methods may operate to present a plurality of searched items by a plurality of points in a matrix view, which includes a first axis and a second axis, respectively representing a price attribute and one of other attributes of the plurality of items. Additional apparatus, systems, and methods are disclosed.
    Type: Grant
    Filed: April 25, 2008
    Date of Patent: December 10, 2019
    Assignee: eBay Inc.
    Inventor: Ling Ma
  • Publication number: 20190355807
    Abstract: A method of forming a semiconductor device, the method comprises forming a gate trench and a contact trench concurrently in a semiconductor substrate using a patterned masking layer, forming a gate conductive filler in the gate trench, forming a deep body region below the contact trench, and forming a contact conductive filler in the contact trench. The method further comprises forming a gate trench dielectric liner in the gate trench, forming a gate trench dielectric liner in the gate trench, and forming an interlayer dielectric layer (IDL) over the gate conductive filler. The method further comprises forming a contact implant at a bottom of the contact trench, and forming a barrier layer in the contact trench.
    Type: Application
    Filed: August 2, 2019
    Publication date: November 21, 2019
    Inventor: Ling Ma
  • Patent number: 10409723
    Abstract: A multi-core processor supporting cache consistency, a method and apparatus for data writing, and a method and apparatus for memory allocation, as well as a system by use thereof. The multi-core processor supporting cache consistency includes a plurality of cores, the plurality of cores corresponding to respective local caches. A local cache of a core of the plurality of cores is responsible for caching data in a different range of addresses in a memory space and a core of the plurality of cores accesses data in a local cache of another core of the plurality of core via an interconnect bus.
    Type: Grant
    Filed: December 9, 2015
    Date of Patent: September 10, 2019
    Assignee: Alibaba Group Holding Limited
    Inventors: Ling Ma, Wei Zhou, Lei Zhang
  • Patent number: 10403712
    Abstract: A method of forming a semiconductor device, the method comprises forming a gate trench and a contact trench concurrently in a semiconductor substrate using a patterned masking layer, forming a gate conductive filler in the gate trench, forming a deep body region below the contact trench, and forming a contact conductive filler in the contact trench. The method further comprises forming a gate trench dielectric liner in the gate trench, forming a gate trench dielectric liner in the gate trench, and forming an interlayer dielectric layer (IDL) over the gate conductive filler. The method further comprises forming a contact implant at a bottom of the contact trench, and forming a barrier layer in the contact trench.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: September 3, 2019
    Assignee: Infineon Technologies Americas Corp.
    Inventor: Ling Ma
  • Patent number: 10282593
    Abstract: Intelligent systems capable of automatic localization and methods using the same are disclosed. An intelligent system includes an intelligent robot and a plurality of face recognition devices each in a wireless connection with the intelligent robot. Each face recognition device is disposed at the entrance of a room, and is configured to identify face information of people in the room and transmit the face information to the intelligent robot. The intelligent robot thus updates a database according to the face information and automatically identifies a location of a subject to be served based on the database. Thus, the present disclosure can automatically identify the location of the subject to be served.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: May 7, 2019
    Assignee: HUIZHOU TCL MOBILE COMMUNICATION CO., LTD
    Inventors: Yu Zheng, Ling Ma
  • Patent number: 10261905
    Abstract: A method for accessing a cache including reading an access instruction for acquiring data; determining, according to a delay identifier carried by the access instruction, whether the access instruction produces a delay; accessing the cache and performing, according to a location identifier carried by the access instruction, a pre-fetch operation if a delay is produced; and modifying, according to a location where the data required by the access instruction is acquired, the delay identifier and the location identifier carried by the access instruction. The technical solutions solve the problem of a low hit rate upon cache access, reduce the probability of misses, and reduce an access delay caused by a level-by-level access to each level of cache upon target data acquisition, which correspondingly lowers the power consumption generated upon the cache access and improves the CPU performance.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: April 16, 2019
    Assignee: Alibaba Group Holding Limited
    Inventors: Ling Ma, Zhihong Wang, Lei Zhang
  • Patent number: 10255361
    Abstract: A method for generating a preview associated with a media file is provided. The method may include receiving a plurality of social comments associated with a plurality of frames corresponding to the media file. The method may also include storing the received plurality of social comments in a repository, whereby the received plurality of social comments is stored with a frame marker. The method may further include analyzing the stored plurality of social comments. The method may additionally include classifying the analyzed plurality of social comments according to at least one sentiment and at least one keyword in the media file.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: April 9, 2019
    Assignee: International Business Machines Corporation
    Inventors: Jing Jing Hu, Ling Ma, Graham A. Watts, Xiao Jin Zhao
  • Publication number: 20190095394
    Abstract: A method for generating a preview associated with a media file is provided. The method may include receiving a plurality of social comments associated with a plurality of frames corresponding to the media file. The method may also include storing the received plurality of social comments in a repository, whereby the received plurality of social comments is stored with a frame marker. The method may further include analyzing the stored plurality of social comments. The method may additionally include classifying the analyzed plurality of social comments according to at least one sentiment and at least one keyword in the media file.
    Type: Application
    Filed: November 29, 2018
    Publication date: March 28, 2019
    Inventors: Jing Jing Hu, Ling Ma, Graham A. Watts, Xiao Jin Zhao
  • Patent number: 10237468
    Abstract: Method and apparatus for enabling precise focusing are provided. The method includes obtaining an operation time of the photographing device in real time by a processor, searching a relationship table of preset times and focus range based on the obtained operation time to obtain a focus range corresponding to the obtained operation time; sending the obtained focus range to a driver by the processor, adjusting the distance between a lens and an image sensor based on the focus range by the driver, so that the lens may be located in the focus range, and to adjust the focus range in real time and improve the accuracy of focusing between the lens and the image sensor.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: March 19, 2019
    Assignee: JRD COMMUNICATION (SHENZHEN) LTD
    Inventors: Jia Wang, Ling Ma
  • Patent number: 10202094
    Abstract: An airbag device mounted on dashboard, comprising an inflatable bag and a gas generator arranged inside a dashboard; wherein upon being filled with gas, the inflatable bag is provided with an upper convex chamber, a lower convex chamber and a concave chamber formed by a pull strap between the upper convex chamber and the lower convex chamber; rear of the upper convex chamber and the lower convex chamber are supported against a dashboard surface; and front of the upper convex chamber and the lower convex chamber form a protective surface. The inflatable bag of the airbag device has a reduced volume, and the gas generator matching the inflatable bag has a reduced output. Moreover, the inflatable bag can maintain the scope and effect of protection to occupant due to its adequate energy absorption ability.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: February 12, 2019
    Assignee: Yanfeng KSS (Shanghai) Automotive Safety Systems Co., Ltd.
    Inventors: Lei Wang, Hong Wang, Ling Ma
  • Patent number: 10168988
    Abstract: A method, a computer program product, and a computer system for identifying user preferences and changing settings of a device based on natural language processing. One or more programs running in background on the device capture an input of natural language from a user of the device, match the input of the natural language to a user frustration, map the user frustration to one or more solutions that make one or more changes of settings on the device, apply the one or more changes of settings to set user preference settings on the device, and store the user preference settings in a common store for the user.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: January 1, 2019
    Assignee: International Business Machines Corporation
    Inventors: Jing Jing Hu, Ling Ma, Graham A. Watts, Xiao Jin Zhao
  • Patent number: 10141415
    Abstract: A semiconductor device includes a gate trench in a semiconductor substrate, a source trench in the semiconductor substrate, the source trench having a first portion and a second portion under the first portion, where the first portion of the source trench is wider than the gate trench, and extends to a depth of the gate trench. The semiconductor device also includes a gate electrode and a gate trench dielectric liner in the gate trench, and a conductive filler and a source trench dielectric liner in the source trench. The semiconductor device further includes a source region between the gate trench and the source trench, a base region between the gate trench and the source trench, and a source contact coupled to the source region and the base region.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: November 27, 2018
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Adam Amali, Ling Ma
  • Publication number: 20180249747
    Abstract: An oil in water (o/w) micro-emulsion comprising: a. water; b. from about 3% up to about 30% oil; c. from about 0.1% up to about 10% lecithin; d. sucrose monoester as an emulsifier wherein the ratio of the combined amount of a lecithin and sucrose monoester to oil is less than 1; e. propylene glycol wherein the propylene glycol to water ratio by weight is greater than 1; and f. from about 14% up to about 40%, by weight, a sugar selected from the group consisting of fructose, glucose, and sucrose, and combinations thereof; wherein the mean droplet size of the o/w micro-emulsion is about 10 to about 80 nm.
    Type: Application
    Filed: September 21, 2016
    Publication date: September 6, 2018
    Applicant: Firmenich SA
    Inventors: Ling MA, Valery NORMAND, Ronald H. SKIFF, Ernst L. STEINBOECK
  • Publication number: 20180182750
    Abstract: A semiconductor substrate has a main surface, a rear surface, an active device region, and an inactive region adjacent the active device region. Doped source, body, drift and drain regions, and electrically conductive gate and field electrodes are disposed in the active device region. The gate electrode is configured to control an electrical connection between the source and drain regions. The field electrode is adjacent to the drift region. An intermetal dielectric layer is disposed on the main surface, an electrically conductive source pad is formed in a first metallization layer that is formed on the intermetal dielectric layer. A resistor is connected between the source pad and the field electrode. The resistor includes an electrically conductive resistance section that is disposed in a resistor trench. The resistor trench is formed within the inactive region and is electrically isolated from every active device within the active device region.
    Type: Application
    Filed: December 27, 2016
    Publication date: June 28, 2018
    Inventors: Hugo Burke, Kapil Kelkar, Ling Ma
  • Patent number: 9991377
    Abstract: According to an exemplary implementation, a field-effect transistor (FET) includes first and second gate trenches extending to a drift region of a first conductivity type. The FET also includes a base region of a second conductivity type that is situated between the first and second gate trenches. A ruggedness enhancement region is situated between the first and second gate trenches, where the ruggedness enhancement region is configured to provide an enhanced avalanche current path from a drain region to the base region when the FET is in an avalanche condition. The enhanced avalanche current path is away from the first and second gate trenches. The ruggedness enhancement region can be of the second conductivity type that includes a higher dopant concentration than the base region. Furthermore, the ruggedness enhancement region can be extending below the first and second gate trenches.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: June 5, 2018
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Ashita Mirchandani, Timothy D. Henson, Ling Ma, Niraj Ranjan
  • Patent number: 9966464
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: May 8, 2018
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Kapil Kelkar, Timothy D. Henson, Ling Ma, Mary Bigglestone, Adam Amali, Hugo Burke, Robert Haase
  • Publication number: 20180109717
    Abstract: Method and apparatus for enabling precise focusing are provided. The method includes obtaining an operation time of the photographing device in real time by a processor, searching a relationship table of preset times and focus range based on the obtained operation time to obtain a focus range corresponding to the obtained operation time; sending the obtained focus range to a driver by the processor, adjusting the distance between a lens and an image sensor based on the focus range by the driver, so that the lens may be located in the focus range, and to adjust the focus range in real time and improve the accuracy of focusing between the lens and the image sensor.
    Type: Application
    Filed: November 1, 2016
    Publication date: April 19, 2018
    Applicant: JRD COMMUNICATION INC.
    Inventors: Jia WANG, Ling MA
  • Patent number: 9905675
    Abstract: An upper portion of a field electrode trench and a gate trench are simultaneously formed in the main surface of a substrate to approximately the same depth. A first protective layer is formed that completely fills the gate trench and lines the upper field electrode trench. The first protective layer is removed from the bottom of the upper trench and semiconductor material is removed thereby forming a lower portion of the field electrode trench while the gate trench remains completely filled by the first protective layer. An electrically conductive field electrode and a field electrode dielectric are formed in the field electrode trench. At least some of the first protective layer is removed from the gate trench. A conformal gate dielectric layer is formed on the substrate. An electrically conductive gate electrode is formed in the gate trench while the field electrode remains covered by the gate dielectric layer.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: February 27, 2018
    Assignee: Infineon Technologies Americas Corp.
    Inventor: Ling Ma