Abstract: Systems and methods for handling sudden power failures in non-volatile memory devices such as solid state drives are provided by having the non-volatile memory device boot up in a low power write mode, which limits substantially all programming operations to a single level cell (SLC) mode, as opposed to a normal mode in which the programming operations can be performed in a multi-level cell (MLC) mode. Thus, if the system experiences a sudden power failure when it is being powered solely by AC derived power and the battery is below a level sufficient for powering the device while it is programming in the SLC mode, data integrity will be preserved because the programming operation was being performed in SLC mode. The non-volatile memory device may be permitted to exit out the low power write mode into the normal mode when the charge level of the battery is sufficient for powering the system.

Abstract: An apparatus includes a register memory and circuitry. The register memory is configured to hold a minimal value specified for a performance measure of a given type of memory access commands, whose actual performance measures vary among memory devices. The circuitry is configured to receive a memory access command of the given type, to execute the received memory access command in one or more memory devices, and to acknowledge the memory access command not before reaching the minimal value stored in the register memory.

Abstract: Systems and methods for handling sudden power failures in non-volatile memory devices such as solid state drives are provided by having the non-volatile memory device boot up in a low power write mode, which limits substantially all programming operations to a single level cell (SLC) mode, as opposed to a normal mode in which the programming operations can be performed in a multi-level cell (MLC) mode. Thus, if the system experiences a sudden power failure when it is being powered solely by AC derived power and the battery is below a level sufficient for powering the device while it is programming in the SLC mode, data integrity will be preserved because the programming operation was being performed in SLC mode. The non-volatile memory device may be permitted to exit out the low power write mode into the normal mode when the charge level of the battery is sufficient for powering the system.

Abstract: An apparatus includes a register memory and circuitry. The register memory is configured to hold a minimal value specified for a performance measure of a given type of memory access commands, whose actual performance measures vary among memory devices. The circuitry is configured to receive a memory access command of the given type, to execute the received memory access command in one or more memory devices, and to acknowledge the memory access command not before reaching the minimal value stored in the register memory.

Abstract: A method includes, in a storage system that includes multiple memory devices, holding a definition of a given type of storage command. Multiple storage commands of the given type are executed in the memory devices, such that an actual current consumption of each storage command deviates from a nominal current waveform defined for the given type by no more than a predefined deviation, and such that each storage command is preceded by a random delay.

Abstract: A method includes, in a storage system that includes multiple memory devices, holding a definition of a given type of storage command. Multiple storage commands of the given type are executed in the memory devices, such that an actual current consumption of each storage command deviates from a nominal current waveform defined for the given type by no more than a predefined deviation, and such that each storage command is preceded by a random delay.