Abstract: A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and depositing a piezoelectric film layer at a second temperature of less than 200 degrees Celsius. The piezoelectric film layer has a surface cone defect count of less than or equal to 2 per 100 microns2 of surface area of the piezoelectric film layer. In some embodiments, no vacuum breaks occur between depositions of the first seed layer, the intermediate film layer, the second seed layer, and the piezoelectric film layer.

Abstract: A chamber includes a target (16) and a magnetron (50) disposed over the target (16). The magnetron (50) includes a plurality of magnets (52, 54). The magnetron (50) has a longitudinal dimension and a lateral dimension. The longitudinal dimension of the magnetron (50) is tilted with respect to the target (16) so the distances between magnets (52, 54) and the target (16) vary. As the magnetron (50) rotates during operation, the strength of the magnetic field produced by the magnetron (50) is an average of the various strengths of magnetic fields produced by the magnets (52, 54). The averaging of the strengths of the magnetic fields leads to uniform film properties and uniform target erosion.

Abstract: Examples disclosed herein relate to an apparatus and method of forming thin film layers on a substrate. A first piezoelectric material layer is deposited on the substrate in a first chamber. The first piezoelectric material layer is formed on the substrate while the substrate is at a first temperature. A second piezoelectric material layer is deposited on the first piezoelectric material layer after cooling the substrate to a second temperature. The second temperature is lower than the first temperature. The first piezoelectric material layer and the second piezoelectric material layer both comprise a first piezoelectric material.

Abstract: Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.

Abstract: Embodiments of the present disclosure generally provide apparatus for collecting and reuse polishing fluids and methods related thereto. In particular, the apparatus and methods provided herein feature a polishing fluid collection system used to collect and reuse polishing fluids dispensed during the chemical mechanical polishing (CMP) of a substrate in an electronic device manufacturing process. In one embodiment, a polishing fluid catch basin assembly includes a catch basin sized to surround at least a portion of a polishing platen and to be spaced apart therefrom. The catch basin features an outer wall, an inner wall disposed radially inward of the outer wall, and a base portion connecting the inner wall to the outer wall. The outer wall, the inner wall, and the base portion collectively define a trough. A radially inward facing surface of the inner wall is defined by an arc radius which is greater than a radius of the polishing platen the catch basin is sized to surround.

Abstract: Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.

Abstract: A chamber includes a target (16) and a magnetron (50) disposed over the target (16). The magnetron (50) includes a plurality of magnets (52, 54). The magnetron (50) has a longitudinal dimension and a lateral dimension. The longitudinal dimension of the magnetron (50) is tilted with respect to the target (16) so the distances between magnets (52, 54) and the target (16) vary. As the magnetron (50) rotates during operation, the strength of the magnetic field produced by the magnetron (50) is an average of the various strengths of magnetic fields produced by the magnets (52, 54). The averaging of the strengths of the magnetic fields leads to uniform film properties and uniform target erosion.

Abstract: The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.

Abstract: Disclosed herein is an apparatus and method for fine tuning properties of a thin film. The method of forming a piezoelectric film includes (a) depositing a first piezoelectric film layer on a surface of a substrate by a first physical vapor deposition (PVD) process. The method includes (b) depositing a second piezoelectric film layer, on top of and in contact with the first piezoelectric film layer, by a second PVD process. A temperature of the substrate is (c) reduced after forming the first piezoelectric film layer and before forming the second piezoelectric film layer. The temperature is reduced by performing a process for a first period of time. Processes (a), (b) and (c) are additionally performed one or more times. Process (c) is performed for a second period of time. The second period of time is different than the first period of time.

Abstract: Embodiments of the disclosure generally relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A film is provided on a portion of the features. The film includes a porosity of about 2% to about 3.5%.

Abstract: The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.

Abstract: Approaches herein provide a device, such as a battery protection device, including a cathode current collector and an anode current collector provided atop a substrate, a cathode provided atop the cathode current collector, and an electrolyte layer provided over the cathode. An interlayer, such as one or more layers of silicon, antimony, magnesium, titanium, magnesium lithium, and/or silver lithium, is formed over the electrolyte layer. An anode contact layer, such as an anode or anode current collector, is then provided over the interlayer. By providing the interlayer atop the electrolyte layer prior to anode contact layer deposition, lithium from the cathode side alloys with the interlayer, thus providing a more isotropic or uniaxial detachment of the anode contact layer.

Abstract: Embodiments of the disclosure generally relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A film is provided on a portion of the features. The film includes a porosity of about 2% to about 3.5%.

Abstract: A method of fabricating thin film electrochemical devices may comprise: depositing on a substrate a stack of layers comprising a CCC, a cathode, an electrolyte, an anode and an ACC; laser die patterning the stack to form die patterned stacks; laser patterning the die patterned stacks to reveal contact areas of at least one of the CCC layer and the ACC layer for each of the die patterned stacks, the laser patterning the die patterned stacks forming device stacks; depositing a blanket encapsulation layer over the device stacks; laser patterning the blanket encapsulation layer to reveal contact areas of the ACC layer and the CCC layer for each of the device stacks, the laser patterning of the blanket encapsulation layer forming encapsulated device stacks; and identifying hot spots by thermographic analysis of one or more of the device stacks and the encapsulated device stacks.

Abstract: A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.

Abstract: A thin film battery may include: a contact layer, the contact layer disposed in a first plane and comprising a cathode current collector and an anode current collector pad; a device stack disposed on the cathode current collector, the device stack comprising a cathode and solid state electrolyte; an anode current collector disposed on the device stack; a thin film encapsulant, the thin film encapsulant disposed over the device stack, wherein the solid state electrolyte encapsulates the cathode.

Abstract: A method for masklessly fabricating a thin film battery, including securing a substrate to a substrate carrier of a first deposition chamber with a first clamping ring having an aperture, performing a first deposition on the substrate to form a first TFB layer, the aperture of the first clamping ring defining a footprint of the first layer, wherein areas of the substrate covered by the first clamping ring are excluded from the first blanket deposition, securing the substrate to a substrate carrier of a second deposition chamber with a second clamping ring having an aperture, and performing a second deposition on the substrate to form a second TFB layer over the first layer, the aperture of the second clamping ring defining a footprint of the second layer, wherein areas of the substrate and the first layer covered by the second clamping ring are excluded from the second blanket deposition.

Abstract: A thin film device. The thin film device may include: an active device region, the active device region comprising a diffusant; and a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region, the thin film encapsulant comprising: a first layer, the first layer disposed immediately adjacent the active device region and comprising a soft and pliable material; and a second layer disposed on the first layer, the second layer comprising a rigid dielectric material or rigid metal material.

Abstract: A thin film device may include an active device region, where the active device region comprises a selective expansion region. The thin film device may further include a polymer layer disposed adjacent to the active device region and encapsulating the active device region, the polymer layer comprising a plurality of polymer sub-layers. A first polymer sub-layer of the plurality of polymer sub-layers may have a first hardness, while a second polymer sub-layer of the plurality of polymer sub-layers has a second hardness, the second hardness being different from the first hardness.

Abstract: Approaches herein provide a device, such as a battery protection device, including a cathode current collector and an anode current collector provided atop a substrate, a cathode provided atop the cathode current collector, and an electrolyte layer provided over the cathode. An interlayer, such as one or more layers of silicon, antimony, magnesium, titanium, magnesium lithium, and/or silver lithium, is formed over the electrolyte layer. An anode contact layer, such as an anode or anode current collector, is then provided over the interlayer. By providing the interlayer atop the electrolyte layer prior to anode contact layer deposition, lithium from the cathode side alloys with the interlayer, thus providing a more isotropic or uniaxial detachment of the anode contact layer.