Patents by Inventor Lloyd Lautzenhiser

Lloyd Lautzenhiser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8624675
    Abstract: A feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. A transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. Additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions. A gate bias circuit including a bias sequencer and negative voltage deriver for operation of N-channel depletion mode devices.
    Type: Grant
    Filed: May 28, 2012
    Date of Patent: January 7, 2014
    Inventor: Lloyd Lautzenhiser
  • Publication number: 20120313709
    Abstract: A feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. A transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. Additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions. A gate bias circuit including a bias sequencer and negative voltage deriver for operation of N-channel depletion mode devices.
    Type: Application
    Filed: May 28, 2012
    Publication date: December 13, 2012
    Inventor: Lloyd Lautzenhiser
  • Patent number: 8188794
    Abstract: The present invention provides a feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. The invention provides a transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. The invention provides additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: May 29, 2012
    Inventor: Lloyd Lautzenhiser
  • Publication number: 20110279185
    Abstract: The present invention provides a feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. The invention provides a transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. The invention provides additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions.
    Type: Application
    Filed: March 25, 2011
    Publication date: November 17, 2011
    Inventor: Lloyd Lautzenhiser