Patents by Inventor Long Chen

Long Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12013554
    Abstract: The present invention discloses a quantum-dot composite optical film comprising: a plurality of quantum dots dispersed in the optical film, wherein the plurality of quantum dots are capable of being water-resistant and oxygen-resistant; and a plurality of prisms, disposed over the quantum-dot layer.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: June 18, 2024
    Assignee: UBRIGHT OPTRONICS CORPORATION
    Inventors: Chia-Yeh Miu, Chia-Jung Chiang, Chien-Chih Lai, Lung-Pin Hsin, Yi-Long Tyan, Jeffrey Wu, Hui-Yong Chen
  • Patent number: 12013815
    Abstract: Method for processing a resource description file includes: receiving an access request directed to a target page from a client terminal, and receiving the resource description file fed back by an origin server with respect to the access request after transmitting the access request to the origin server; identifying one or more resource links in the resource description file and determining whether the one or more resource links include one or more external links; if the one or more resource links include the one or more external links, rewriting an external link of the one or more resource links to an internal link and replacing the external link in the resource description file with a corresponding internal link formed by rewriting the external link; and feeding back a rewritten resource description file to the client terminal to acquire resource of the target page according to the rewritten resource description file.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: June 18, 2024
    Assignee: WANGSU SCIENCE & TECHNOLOGY CO., LTD.
    Inventor: Long Chen
  • Patent number: 12006353
    Abstract: An application of SCFV protein in preparation of a CAR gene expression vector is disclosed. The protein sequence of the SCFV protein is shown in SEQ ID No. 1. The 1st˜21st amino acids are the extracellular signal peptide amino acid sequences. The 22nd˜31st amino acids are Flag amino acid sequences. And the remaining sequences are CXCR4 scfv sequences. An application of the gene sequence encoding the SCFV protein in preparation of a CAR gene expression vector is disclosed, and the gene sequence is shown in SEQ ID No.2. A CAR gene expression vector and a CAR-T cell are disclosed. The expression vector is plent-EF1a-Flag-CXCR4 CAR, and CAR-T cells are used in the preparation of a drug for a targeted therapy of tumor cells with high expression of CXCR4.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: June 11, 2024
    Inventor: Long Chen
  • Patent number: 12009388
    Abstract: A method includes forming a dielectric layer on a substrate; forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths.
    Type: Grant
    Filed: October 28, 2022
    Date of Patent: June 11, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC CHINA COMPANY LIMITED
    Inventor: Zheng-Long Chen
  • Publication number: 20240182680
    Abstract: Composition comprising at least one aromatic peroxide and at least one ketone peroxide The present invention deals with a composition comprising at least one aromatic peroxide comprising at least one aromatic ring and at least one peroxo function in its structure, as defined hereinafter, and at least one ketone peroxide.
    Type: Application
    Filed: April 7, 2022
    Publication date: June 6, 2024
    Inventors: Long CHEN, Hui CHEN, Bruno VAN HEMELRYCK, Serge HUB
  • Patent number: 12002601
    Abstract: Disclosed are a stress-resistant, creep-resistant, high-temperature resistant and high-insulation sheath material for a maglev train cable, and a manufacturing method and use thereof. A multiple chemical crosslinking structure is constructed by blending a functional polyvinylsilicone grease with ultra-high molecular weight polyethylene (UHMWPE) and a ceramicized silicone rubber as a cable material matrix and using electron beam irradiation. In addition, organic/inorganic fillers in the matrix can form physical crosslinking points in the material. A physical-chemical dual crosslinking structure is constructed in the matrix, which can limit the motion and relaxation of molecular chains and improve the interaction between the insulation layer and sheath layer and refractory layers such as fillers and mica tapes to avoid the relative displacement during the laying and operation and improve the high-temperature resistance, creep resistance and stress relaxation resistance of a UHMWPE cable sheath material.
    Type: Grant
    Filed: October 27, 2023
    Date of Patent: June 4, 2024
    Assignee: Anhui Jianzhu University
    Inventors: Ping Wang, Shang Gao, Yong Zhong, Wenxiu Liu, Tao Hong, Tao Song, Long Chen, Bin Ye, Yunsheng Ding, Li Yang, Jie Song, Hongyu Tian, Haibing Lu
  • Patent number: 12002996
    Abstract: A battery module, a battery pack, a device using a battery module as a power source, and a method of manufacturing a battery module are provided. The battery module includes: at least two battery cells; a connecting piece configured to electrically connect two battery cells of at least two battery cells; and a protective layer including a first protective portion configured to cover the connecting piece. A melting point of the first protective portion is greater than that of the connecting piece.
    Type: Grant
    Filed: February 4, 2021
    Date of Patent: June 4, 2024
    Assignee: Contemporary Amperex Technology Co., Limited
    Inventors: Yu Tang, Mingdi Xie, Zhanyu Sun, Kaijie You, Xingdi Chen, Long Li
  • Patent number: 12000222
    Abstract: A pressure compensation device with an accumulator group for controlled pressure drilling includes an electrical flat valve, a check valve, an accumulator group, a flanged pup joint and a support base. The electrical flat valve is connected to the check valve and is mounted on a top surface of the support base. The accumulator group mounted on the whole support base is a pre-storage pressure compensation device for controlled pressure drilling, and is located at a downstream position of the check valve. The liquid inlet end of the accumulator group is connected to the check valve, and the liquid discharge end is connected to the flanged pup joint.
    Type: Grant
    Filed: September 7, 2020
    Date of Patent: June 4, 2024
    Assignees: CNPC BOHAI DRILING ENGINEERING COMPANY LIMITED, CHINA NATIONAL PETROLEUM CORPORATION, CHINA UNIVERSITY OF PETROLEUM (EAST CHINA)
    Inventors: Jinshan Ma, Baojiang Sun, Jintao Qi, Liming Wei, Fengliang Xi, Gang Liu, Zhiyuan Wang, Xing Wang, Haichao Xu, Long Ma, Jiacui Luan, Lei Chen, Guodong Chen, Yuanlin Zhao, Zisen Yang, Qiang Huang, Menglei Ma, Xiantao Meng, Hongyin Wei
  • Patent number: 12002851
    Abstract: A semiconductor structure includes a substrate having a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first diffusion layer disposed in the substrate and adjacent to the first surface, and a first electrode layer disposed on the first diffusion layer. The semiconductor structure further includes a second diffusion layer disposed in the substrate and adjacent to the second surface, and a plurality of diffusion regions disposed in the second diffusion layer. The semiconductor structure further includes a second electrode layer disposed on the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.
    Type: Grant
    Filed: March 9, 2022
    Date of Patent: June 4, 2024
    Assignee: Diodes Incorporated
    Inventors: Tao Long, Pin-Hao Huang, Ze Rui Chen
  • Publication number: 20240172977
    Abstract: The present disclosure discloses an automatic detection system for depressive disorder based on high frequency ASSR. The system includes an auditory stimulation module, a data acquisition module, a signal processing module, a depression detection module and an output module; the auditory stimulation module presents 40 Hz frequency-increasing sound stimulation signals to a user; the data acquisition module acquires EEG signals by a non-intrusive method for preprocessing to obtain ASSR data; the signal processing module extracts depressive disorder-related EEG features from the ASSR data; the depression detection module identifies a user depression state through decision fusion of the depressive disorder-related EEG features; and the output module identifies the user depression state according to the EEG features to generate an evaluation report for abnormity in EEG response, and feeds it back to the user.
    Type: Application
    Filed: January 27, 2023
    Publication date: May 30, 2024
    Inventors: Xiaoya LIU, Shuang LIU, Dong MING, Wenquan ZHANG, Yufeng KE, Jie LI, Long CHEN
  • Patent number: 11996479
    Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode overlying a gate dielectric layer covering both a channel region in a second semiconductor region and a portion of a first semiconductor region. First-type dopants are implemented into the second semiconductor region masked by a hard mask to form a source precursor region. The method also includes forming a spacer which overlies the source precursor region and has a first side laterally adjacent to the gate electrode, and recessing a surface region in the source precursor region masked by the spacer to form a source region. The method still includes implanting second-type dopants through the surface region masked at least by the spacer to form a body contact region, and forming a conformal conductive layer covering an upper surface of the body contact region and a side surface of the source.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: May 28, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY, LIMITED
    Inventor: Zheng Long Chen
  • Patent number: 11989373
    Abstract: A circuit to cancel the effect of parasitic capacitances (“initial signals”) in calculations as to precise touch locations on a touch display screen (signal compensation circuit) includes first and second compensation circuits connected to a charge-discharge node. The first compensation circuit receives initial signals, generates first charging currents to charge, and first discharging currents to discharge, the charging-discharging node. The second compensation circuit generates second charging currents to charge, and second discharging currents to discharge, the charging-discharging node. Values of the first charging currents, the second charging currents, the first discharging currents, and the second discharging currents are of different magnitudes and are applied in order to amount to a more precise match for the exact compensation value required.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: May 21, 2024
    Assignee: JADARD TECHNOLOGY INC.
    Inventors: Feng-Wei Lin, Yu-Chieh Hsu, Long Chen
  • Publication number: 20240156195
    Abstract: The present application provides a comfortable lightweight bullet-proof and stab-resistant suit and a preparation method thereof. A first aspect of the present application provides a comfortable lightweight bullet-proof and stab-resistant suit, including a sheath and a protection core sheet disposed in the sheath, and the protection core sheet includes a first protection layer, a second protection layer, a third protection layer and a buffer layer which are sequentially stacked together. The bullet-proof and stab-resistant suit provided in the present application has better response protection characteristics in the process of bullet penetration or knife tip stab, and the prepared aramid unidirectional cloth has low areal density, apparent flatness, no bubbles, and excellent softness, so that any bending within 180° can be realized.
    Type: Application
    Filed: April 25, 2023
    Publication date: May 16, 2024
    Inventors: Xinling FANG, Yuankun LIU, Dongmei XU, Qingsong AI, Hongxin LI, Hong CHEN, Zhaoyang LIU, Zhiyong PAN, Zhongwei WU, Zongjia LI, Nianhua LI, Liandong JIANG, Ruiling WANG, Long HU, Liqiang FU, Bing ZHANG, Junhong DAI, Fangning XUE
  • Patent number: 11984400
    Abstract: An SRAM device and method of forming include pass gate (PG), pull-down (PD), and pull-up (PU) transistors. A first gate line of the PG and a second gate line of the PD and the PU extend in a first direction. A common source/drain of the PG, PD, and PU transistors interposes the first and second gate lines and another source/drain of the PG transistor. A first contact extends from the common source/drain and a second contact extends from the another source/drain. A third contact is disposed above the second contact with a first width in the first direction and a first length in a second direction, first length being greater than the first width.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Yuan Chang, Jui-Lin Chen, Kian-Long Lim, Feng-Ming Chang
  • Publication number: 20240153979
    Abstract: A method of manufacturing an image sensor structure includes forming an isolation structure in a substrate to divide the substrate into a first region and a second region, forming a first light sensing region in the first region and a second light sensing region in the second region, forming a first gate structure over the first light sensing region and a second gate structure over the second light sensing region, forming gate spacers on sidewalls of the first and second gate structures, and depositing a blocking layer on sidewalls of the gate spacers. The blocking layer has an opening positioned between the first and second gate structures. A source/drain structure is formed directly under the opening in the blocking layer. The method also includes forming an interlayer dielectric layer over the first and second gate structures and the blocking layer.
    Type: Application
    Filed: April 13, 2023
    Publication date: May 9, 2024
    Inventors: Wei Long CHEN, Wen-I HSU, Feng-Chi HUNG, Jen-Cheng LIU, Dun-Nian YAUNG
  • Publication number: 20240154296
    Abstract: A base station antenna assembly includes: first and second reflectors, the first and second reflectors having first and second sides, being electrically conductive and being disposed generally parallel to each other to form a gap therebetween; a stripline printed circuit board (PCB) positioned in the gap between the first and second reflectors; a first PCB mounted on the first side of the first reflector; a second PCB mounted on the first side of the second reflector so that the second PCB is positioned in the gap; and at least one first radiating element mounted to a first side of the first reflector, the at least one first radiating element having first and second stalks extending through the first PCB, through the first reflector, through the stripline PCB, through the second PCB, and to the second reflector.
    Type: Application
    Filed: November 6, 2023
    Publication date: May 9, 2024
    Inventors: Changfu Chen, YueMin Li, Haifei Qin, Junfeng Yu, Long Shan
  • Publication number: 20240154218
    Abstract: Provided are a battery cell, a battery, and an electrical apparatus. The battery cell includes a case, an electrode assembly, a first electrode terminal, and a cover plate. The case includes a cylinder and a cover body that are integrally formed, and the cylinder has an opening at the end facing away from the cover body. The electrode assembly is accommodated in the case and includes a first tab. The first electrode terminal is arranged on the cover body and is configured for electrical connection with the first tab. The cover plate is connected to the cylinder and covers the opening. The first electrode terminal is mounted to the cover body, which can increase a distance between a joint between the cylinder and the cover plate and the first electrode terminal.
    Type: Application
    Filed: January 14, 2024
    Publication date: May 9, 2024
    Inventors: Wenlin Zhou, Long Chen, Yulian Zheng, Quankun Li, Peng Wang, Zhijun Guo
  • Publication number: 20240150942
    Abstract: The present application discloses a warp knitting traverse device and a warp knitting machine. The warp knitting traverse device includes a faceplate and a comb. The cross-section of the faceplate is an annular shape with different outer diameters, and the annular shape is divided into x number of equal parts, courses, along the circumferential direction and wherein 2?x?8; on the outer surface of the faceplate, at least two slopes are formed between adjacent courses. The present invention utilizes this new structural design, and designs a gradually gentle slope for buffering for the comb movement, allowing the comb to move step by step, which can avoid the instability caused by sudden large span, and is conducive to achieve high precision and smoothness in using a warp knitting machine in the process of fabric production. The new improvement preserve the machine for continuous production and achieve high throughput.
    Type: Application
    Filed: November 5, 2022
    Publication date: May 9, 2024
    Applicant: Sumec Textile Technology Co., Ltd.
    Inventors: Long Cheng, Wei Chen
  • Patent number: 11976193
    Abstract: A method for detecting a thickness of bonded rubber of a carbon black in a natural rubber based for reinforcement performance is provided. An ultra-thin frozen microtome to prepare a sample, a tapping mode of the atomic force microscope is used, and when characterizes the carbon black and rubber composite material, the difference of imaging characteristics between morphological and phase diagrams is used, the characteristics of bonded rubber of carbon black reinforced composite material can be observed to obtain the thickness of bonded rubber, and then influence of bonded rubber on rubber performance and the reinforcement performance of the carbon black in the rubber are analyzed. The method has advantages of simple operation, no need for excessive sample processing, high detection efficiency, clear detection images and high detection accuracy, thereby having better applicability and providing a new method and idea for studying reinforcements of fillers.
    Type: Grant
    Filed: August 11, 2021
    Date of Patent: May 7, 2024
    Assignee: SICHUAN UNIVERSITY OF SCIENCE & ENGINEERING
    Inventors: Jian Chen, Zhiqiang Lei, Long Qing, Rui Li, Sha Liu, Lin Li
  • Patent number: 11975421
    Abstract: The present disclosure provides a chemical mechanical polishing system having a unitary platen. The platen includes one or more recesses within the platen to house various components for the polishing/planarization process. In one embodiment, the platen includes a first recess and a second recess. The first recess is located under the second recess. An end point detector is placed in the first recess and a detector cover may be placed in the second recess. A sealing mean is provided in a space between the end point detector and the detector cover to prevent any external or foreign materials from coming in contact with the end point detector. A fastener used for fastening the detector cover to the platen also provides addition protection to prevent foreign materials from coming in contact with components received in the recesses.
    Type: Grant
    Filed: January 3, 2023
    Date of Patent: May 7, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Lung Lai, Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng, Rong-Long Hung