Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

Abstract: A THz frequency range antenna is provided which comprises: a semiconductor film (3) having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film (3) is structured with an antenna structure (4) arranged to support localized surface plasmon resonances in the THz frequency range.

Abstract: A device for analyzing a sample using radiation in the terahertz frequency range is provided. The device comprises a transmitter (3) comprising a THz signal generator (5, 6, 7; 51) for generating an electromagnetic THz signal, the THz signal generator comprising a nonlinear transmission line (7; 52). The device further comprises a surface plasmon polariton generating unit (8) adapted to convert the THz signal into a surface plasmon polariton. The transmitter (3) and the surface plamon polariton generating unit (8) are either integrated on one common substrate or on two separate substrates.

Abstract: In order to guide electromagnetic waves in the terahertz range over long distances of several meters with low bending losses and large bandwidth, a device, a system and a method are provided such that electromagnetic waves in the terahertz range can be coupled into a wire having a core structure and at least one confinement structure, wherein the confinement structure extends continuously along a length of the wire.

Abstract: For integration into a CMOS/BICMOS process, a high-frequency waveguide structure, a diode-bridge structure and an imaging/spectroscopy system and a method for manufacturing a high-frequency waveguide structure are provided, wherein a height of each of a first and a second conducting lines (11, 12) is higher than a width of each of the first and the second conducting lines (11, 12). The first and second conducting lines (11, 12) form a slotline waveguide, wherein the third conducting line (13) together with the first and the second conducting lines (11, 12) form a (co-)planar waveguide.

Abstract: A device for analyzing a sample using radiation in the terahertz frequency range is provided. The device comprises a transmitter (3) comprising a THz signal generator (5, 6, 7; 51) for generating an electromagnetic THz signal, the THz signal generator comprising a nonlinear transmission line (7; 52). The device further comprises a surface plasmon polariton generating unit (8) adapted to convert the THz signal into a surface plasmon polariton. The transmitter (3) and the surface plamon polariton generating unit (8) are either integrated on one common substrate or on two separate substrates.

Abstract: There is provided a method and apparatus for maintaining a bias current that flows through two transistors at a target level. The two transistors are both connected to form a series network between positive and negative voltage supply terminals. The bias current flows through the two transistors when the circuit is at equilibrium, and the threshold voltage of the transistors is controlled by controlling the voltage that is applied to the transistors bulk terminals. In addition to the two transistors, there is provided a control circuit that measures a circuit parameter that is indicative of the level of bias current flowing through the two transistors. In response to the measured parameter, the control circuit adjusts the bulk voltage levels of the two transistors so as to alter the transistors threshold voltages and maintain the level of bias current at a target level.

Abstract: A THz frequency range antenna is provided which comprises: a semiconductor film (3) having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film (3) is structured with an antenna structure (4) arranged to support localized surface plasmon resonances in the THz frequency range.

Abstract: The present invention relates to an improved PTAT current source and a respective method for generating a PTAT current. Opportune collector currents are generated and forced in two transistors exploiting the logarithmic relation between the base-emitter voltage and the collector current of a transistor. A resistor senses a voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor for providing an output current. By this principle an all npn-transistor PTAT current source can be provided that does not need pup transistors as in conventional PTAT current sources. The invention is generally applicable to a variety of different types of integrated circuits needing a PTAT current reference, especially in modern advanced technologies as InP and GaAs where p-type devices are not available.

Abstract: There is provided a method and apparatus for maintaining a bias current (IBIAS1) that flows through two transistors (MN2, MP2) at a target level. The two transistors are both connected to form a series network between positive (VDD) and negative (GND) voltage supply terminals. The bias current flows through the two transistors (MN2, MP2) when the circuit is at equilibrium, and the threshold voltage of the transistors is controlled by controlling the voltage (VB1, VB2) that is applied to the transistors bulk terminals. In addition to the two transistors, there is provided a control circuit (25) that measures a circuit parameter (VDD) that is indicative of the level of bias current flowing through the two transistors. In response to the measured parameter, the control circuit adjusts the bulk voltage levels of the two transistors (VB1, VB2) SO as to alter the transistors threshold voltages and maintain the level of bias current at a target level.

Abstract: The present invention relates to an improved PTAT current source and a respective method for generating a PTAT current. Opportune collector currents are generated and forced in two transistors exploiting the logarithmic relation between the base-emitter voltage and the collector current of a transistor. A resistor senses a voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor for providing an output current. By this principle an all npn-transistor PTAT current source can be provided that does not need pup transistors as in conventional PTAT current sources. The invention is generally applicable to a variety of different types of integrated circuits needing a PTAT current reference, especially in modern advanced technologies as InP and GaAs where p-type devices are not available.