Patents by Inventor Louis Felix Feiner
Louis Felix Feiner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9231201Abstract: The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.Type: GrantFiled: June 28, 2005Date of Patent: January 5, 2016Assignee: NXP B.V.Inventors: Robertus Theodorus Fransiscus Van Schaijk, Prabhat Agarwal, Erik Petrus Antonius Maria Bakkers, Martijn Henri Richard Lankhorst, Michiel Jos Van Duuren, Abraham Rudolf Balkenende, Louis Felix Feiner, Pierre Hermanus Woerlee
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Patent number: 7825032Abstract: The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire diameter of the at least one pre-fabricated nanowire by etching. The etching is induced by light which is absorbed by the at least one pre-fabricated nanowire. The spectrum of the light is chosen such that the absorption of the at least one pre-fabricated nanowire is significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter.Type: GrantFiled: December 3, 2004Date of Patent: November 2, 2010Assignee: Koninklijke Philips Electronics N.V.Inventors: Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner, Abraham Rudolf Balkenende
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Patent number: 7768081Abstract: A semiconductor device is provided in which energy band gap can be electrically varied. The device includes nanowires embedded in a material that exhibits a deformation when properly addressed, e.g., a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (A1N) or zinc oxide (Zn0). The nanowires can be reversibly strained by applying a local deformation to the piezoelectric material by applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g., a LED or a laser. Further, contact resistance in semiconductor junctions can be controlled, e.g., for use in memories and switches.Type: GrantFiled: October 20, 2005Date of Patent: August 3, 2010Assignee: Koninklijke Philips Electronics N VInventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
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Publication number: 20090200536Abstract: The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.Type: ApplicationFiled: June 28, 2005Publication date: August 13, 2009Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Robertus Theodorus Franciscus Van Schaijk, Prabhat Agarwal, Erik Petrus Antonius Maria Bakkers, Martijn Henri Richard Lankhorst, Michiel Jos Van Duuren, Abraham Rudolf Balkenende, Louis Felix Feiner, Pierre Hermanus Woerlee
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Patent number: 7550755Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.Type: GrantFiled: October 20, 2005Date of Patent: June 23, 2009Assignee: Philips Lumiled Lighting Co., LLCInventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
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Publication number: 20090121213Abstract: The present invention relates to a semiconductor device in which energy band gap can be electrically varied. An idea of the present invention is to provide a device, which is based on nanowires (306) embedded in a material (307) that exhibits a deformation when properly addressed, e.g. a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (AIN) or zinc oxide (ZnO). The nanowires (306) can be reversibly strained by applying a local deformation to the piezoelectric material (307) by means of applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g. a LED or a laser. This is a consequence of the fact that the band gap is proportional to the frequency of the emitted light. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.Type: ApplicationFiled: October 20, 2005Publication date: May 14, 2009Applicant: KONINKLIJKE PHILIPS ELECTRONICS, N.V.Inventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
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Publication number: 20090121209Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.Type: ApplicationFiled: October 20, 2005Publication date: May 14, 2009Applicant: KONINKLIJKE PHILIPS ELECTRONICS, N.V.Inventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
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Publication number: 20080224115Abstract: The method of fabricating a set of semiconducting nanowires (10) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires (10?), at least one pre-fabricated semiconducting nanowire having a wire diameter (d?) larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire (10?) by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire (10?), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device (100) may comprise a set of nanowires (10) having the desired wire diameter (d). The apparatus (29) may be used to execute the method according to the invention.Type: ApplicationFiled: December 3, 2004Publication date: September 18, 2008Inventors: Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner, Abraham Rudolf Balkenende
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Patent number: 7288773Abstract: The invention provides an electron source suitable for use in a charged-particle apparatus, in which source a beam of electrons can be extracted from an electrode that is subjected to at least one of an electric potential, thermal excitation and photonic excitation, whereby at least part of the electrode comprises semiconductor material having a conduction band that is quantized into discrete energy levels. Such a source enjoys a relatively low energy spread, typically much smaller than that of a Cold Field Emission Gun (CFEG). The semiconductor material may, for example, comprise a semiconductor nanowire including InAs and GaInAs.Type: GrantFiled: September 22, 2005Date of Patent: October 30, 2007Assignees: FEI Company, Koninklijke Philips Electronics N.V.Inventors: Niels de Jonge, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner, Antonio Maria Calvosa
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Publication number: 20060076504Abstract: The invention provides an electron source suitable for use in a charged-particle apparatus, in which source a beam of electrons can be extracted from an electrode that is subjected to at least one of an electric potential, thermal excitation and photonic excitation, whereby at least part of the electrode comprises semiconductor material having a conduction band that is quantized into discrete energy levels. Such a source enjoys a relatively low energy spread, typically much smaller than that of a Cold Field Emission Gun (CFEG). Said semiconductor material may, for example, comprise a semiconductor nanowire. Examples of suitable semiconductor materials for such a nanowire include InAs and GaInAs.Type: ApplicationFiled: September 22, 2005Publication date: April 13, 2006Applicant: FEI CompanyInventors: Niels de Jonge, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner, Antonio Maria Calvosa