Patents by Inventor Louis HUTIN

Louis HUTIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9536951
    Abstract: FinFET transistor comprising at least: one fin that forms a channel, a source and a drain, comprising an alternating stack of first portions of silicon-rich SiGe and of second portions of a dielectric or semiconductor material, and third portions of germanium-rich SiGe arranged at least against lateral faces of the first portions, one gate that covers the channel, and wherein each one of the third portions comprises faces with a crystal orientation [111] covered by the gate.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: January 3, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Sylvain Maitrejean, Emmanuel Augendre, Louis Hutin, Yves Morand
  • Publication number: 20160268406
    Abstract: Single-electron transistor comprising at least: first semiconductor portions forming source and drain regions, a second semiconductor portion forming at least one quantum island, third semiconductor portions forming tunnel junctions between the second semiconductor portion and the first semiconductor portions, a gate and a gate dielectric located on at least the second semiconductor portion, in which a thickness of each of the first semiconductor portions is greater than the thickness of the second semiconductor portion, and in which a thickness of the second semiconductor portion is greater than the thickness of each of the third semiconductor portions.
    Type: Application
    Filed: March 10, 2016
    Publication date: September 15, 2016
    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Sylvain BARRAUD, Ivan DUCHEMIN, Louis HUTIN, Yann-Michel NIQUET, Maud VINET
  • Publication number: 20160260819
    Abstract: A field-effect transistor, including a source, drain and channel formed in a semiconductor layer a gate stack placed above the channel, including a metal electrode, a first layer of electrical insulator placed between the metal electrode and the channel, and a second layer of electrical insulator covering the metal electrode; a metal contact placed plumb with the source or drain and at least partially plumb with said gate stack; and a third layer of electrical insulator placed between said metal contact and said source or said drain.
    Type: Application
    Filed: March 2, 2016
    Publication date: September 8, 2016
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Julien BORREL, Louis Hutin, Yves Morand, Fabrice Nemouchi, Heimanu Niebojewski
  • Publication number: 20160071933
    Abstract: FinFET transistor comprising at least: one fin that forms a channel, a source and a drain, comprising an alternating stack of first portions of silicon-rich SiGe and of second portions of a dielectric or semiconductor material, and third portions of germanium-rich SiGe arranged at least against lateral faces of the first portions, one gate that covers the channel, and wherein each one of the third portions comprises faces with a crystal orientation [111] covered by the gate.
    Type: Application
    Filed: September 9, 2015
    Publication date: March 10, 2016
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Sylvain MAITREJEAN, Emmanuel AUGENDRE, Louis HUTIN, Yves MORAND