Abstract: In some examples, this disclosure describes a method of operating a circuit. The method may comprise performing a circuit function under normal operating conditions, wherein performing the circuit function under the normal operating conditions includes performing at least a portion of the circuit functions via a characteristic circuit, performing at least the portion of the circuit function under enhanced stress conditions via a characteristic circuit replica, and predicting a potential future problem with the circuit function under the normal conditions based on an evaluation of operation of the characteristic circuit relative to operation of the characteristic circuit replica.

Abstract: In some examples, a method of operating a circuit may comprise performing a circuit function under normal conditions, performing the circuit function under aggravated conditions, predicting a potential future problem with the circuit function under the normal conditions based on an output of the circuit function under the aggravated conditions, and outputting a predictive alert based on predicting the potential future problem.

Abstract: In some examples, a method comprises performing a circuit function via a circuit; and estimating a remaining life of the circuit. Moreover, estimating the remaining life of the circuit may include measuring one or more circuit parameters over a period of time during operation of the circuit, and estimating the remaining life of the circuit based on the one or more measured circuit parameters over the period of time during operation of the circuit.

Abstract: In some examples, a method of operating a circuit is described. The method may include performing a circuit function and estimating a probability of failure of the circuit based on one or more stress origination metrics, one or more stress victim events, and one or more initial state conditions.

Abstract: In some examples, a circuit comprises a function unit configured to perform a circuit function, and one or more in situ monitors configured to measure internal data associated with the circuit. The circuit may further comprise a memory configured to store one or more limit values associated with the one or more in situ monitors, and a lifetime model unit configured to determine whether the circuit has reached an end-of-life threshold based on the measured internal data from the one or more in situ monitors and the limit values.

Abstract: In some examples, a method of operating a circuit may comprise performing a circuit function under normal conditions, performing the circuit function under aggravated conditions, predicting a potential future problem with the circuit function under the normal conditions based on an output of the circuit function under the aggravated conditions, and outputting a predictive alert based on predicting the potential future problem.

Abstract: In some examples, this disclosure describes a method of operating a circuit. The method may comprise performing a circuit function under normal operating conditions, wherein performing the circuit function under the normal operating conditions includes performing at least a portion of the circuit functions via a characteristic circuit, performing at least the portion of the circuit function under enhanced stress conditions via a characteristic circuit replica, and predicting a potential future problem with the circuit function under the normal conditions based on an evaluation of operation of the characteristic circuit relative to operation of the characteristic circuit replica.

Abstract: In some examples, a circuit may be configured to perform a method that includes performing a circuit function via a circuit function unit of a circuit, receiving sensor data from one or more sensors associated with the circuit function unit, and estimating a remaining life of the circuit based on an accelerated reliability model and the sensor data, wherein the sensor data comprises input to the accelerated reliability model. The circuit itself may include a dedicated circuit unit that estimates the remaining life of the circuit based on an accelerated reliability model and the sensor data, and the circuit may output one or more predictive alerts or predictive faults when the remaining life is below a threshold, which may prompt the system for predictive maintenance on the circuit.

Abstract: An integrated circuit configuration includes a semiconductor body having a first semiconductor zone of a first conductivity type in a region near a rear side and a second semiconductor zone of the first conductivity type adjoining the first semiconductor zone and doped more weakly than the first semiconductor zone in a region near a front side, a first component region in the body having at least one semiconductor zone of a second conductivity type, a second component region in the body having at least one semiconductor zone of the second conductivity type, and a conversion structure having a semiconductor zone of the second conductivity type and a semiconductor zone of the first conductivity type that are short-circuited and disposed at a distance from the first semiconductor zone between the first and second component regions in the second semiconductor zone.

Abstract: An integrated circuit configuration includes a semiconductor body having a first semiconductor zone of a first conductivity type in a region near a rear side and a second semiconductor zone of the first conductivity type adjoining the first semiconductor zone and doped more weakly than the first semiconductor zone in a region near a front side, a first component region in the body having at least one semiconductor zone of a second conductivity type, a second component region in the body having at least one semiconductor zone of the second conductivity type, and a conversion structure having a semiconductor zone of the second conductivity type and a semiconductor zone of the first conductivity type that are short-circuited and disposed at a distance from the first semiconductor zone between the first and second component regions in the second semiconductor zone.