Abstract: According to one aspect, a manifold assembly includes a skid, a low pressure manifold connected to the skid, and a high pressure manifold connected to the skid. In another aspect, the high pressure manifold has a modular configuration so that the high pressure manifold is disconnectable in whole or in part from the skid, and reconnectable in whole or in part to the skid. In yet another aspect, the high pressure manifold includes high pressure modules, all of which are in fluid communication with each other and each of which is adapted to be in fluid communication with at least one pump. In still yet another aspect, the low pressure manifold includes one or more flow lines, the high pressure manifold includes fittings, and the manifold assembly includes vibration isolators to dampen dynamic loading, the vibration isolators being disposed between the fittings and the one or more flow lines.

Abstract: Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.

Abstract: According to one aspect, a manifold assembly includes a skid, a low pressure manifold connected to the skid, and a high pressure manifold connected to the skid. In another aspect, the high pressure manifold has a modular configuration so that the high pressure manifold is disconnectable in whole or in part from the skid, and reconnectable in whole or in part to the skid. In yet another aspect, the high pressure manifold includes high pressure modules, all of which are in fluid communication with each other and each of which is adapted to be in fluid communication with at least one pump. In still yet another aspect, the low pressure manifold includes one or more flow lines, the high pressure manifold includes fittings, and the manifold assembly includes vibration isolators to dampen dynamic loading, the vibration isolators being disposed between the fittings and the one or more flow lines.

Abstract: According to one aspect, a manifold assembly includes a skid, a low pressure manifold connected to the skid, and a high pressure manifold connected to the skid. In another aspect, the high pressure manifold has a modular configuration so that the high pressure manifold is disconnectable in whole or in part from the skid, and reconnectable in whole or in part to the skid. In yet another aspect, the high pressure manifold includes high pressure modules, all of which are in fluid communication with each other and each of which is adapted to be in fluid communication with at least one pump. In still yet another aspect, the low pressure manifold includes one or more flow lines, the high pressure manifold includes fittings, and the manifold assembly includes vibration isolators to dampen dynamic loading, the vibration isolators being disposed between the fittings and the one or more flow lines.

Abstract: According to one aspect, a manifold assembly includes a skid, a low pressure manifold connected to the skid, and a high pressure manifold connected to the skid. In another aspect, the high pressure manifold has a modular configuration so that the high pressure manifold is disconnectable in whole or in part from the skid, and reconnectable in whole or in part to the skid. In yet another aspect, the high pressure manifold includes high pressure modules, all of which are in fluid communication with each other and each of which is adapted to be in fluid communication with at least one pump. In still yet another aspect, the low pressure manifold includes one or more flow lines, the high pressure manifold includes fittings, and the manifold assembly includes vibration isolators to dampen dynamic loading, the vibration isolators being disposed between the fittings and the one or more flow lines.

Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

Abstract: A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone.

Abstract: Embodiments of a valve assembly for a process chamber having improved seal performance are provided herein. In some embodiments, a valve assembly for a process chamber includes a housing having an opening disposed in a wall thereof and through which a substrate may be transferred; a door movably coupled to the housing in a plane substantially parallel to the wall of the housing for selectively sealing the opening; a compressible sealing member disposed at least partly between an upper surface of the door and a corresponding surface of the housing for forming a seal therebetween by compression of the compressible sealing member in a direction substantially perpendicular to the wall when the door is in a closed position; and a mechanism for restricting the exposure of the compressible sealing member to an environment on a process chamber side of the housing.

Abstract: Embodiments of the present invention generally provide apparatus and methods for preventing contamination within a processing system due to substrate breakage. In one embodiment, an acoustic detection mechanism is disposed on or within a process chamber to monitor conditions within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions indicative of substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions that are known to lead to substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism is combined with an optical detection mechanism. By early detection of substrate breakage or conditions known to lead to substrate breakage, the process chamber may be taken off line and repaired prior to contamination of the entire process system.

Abstract: Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.

Abstract: Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.

Abstract: Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source.

Abstract: A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.

Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

Abstract: A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate.

Abstract: Embodiments of a manifold assembly are provided herein. In some embodiments, a manifold assembly includes a first manifold having a first inlet, for coupling to a high temperature fluid source, and a first outlet; a second manifold having a second inlet and a second outlet; and a connector portion coupling the first outlet of the first manifold to the second inlet of the second manifold, the connector portion includes a polymer block; and a thermal isolator disposed between the polymer block and the first manifold.

Abstract: Embodiments of a valve assembly for a process chamber having improved seal performance are provided herein. In some embodiments, a valve assembly for a process chamber includes a housing having an opening disposed in a wall thereof and through which a substrate may be transferred; a door movably coupled to the housing in a plane substantially parallel to the wall of the housing for selectively sealing the opening; a compressible sealing member disposed at least partly between an upper surface of the door and a corresponding surface of the housing for forming a seal therebetween by compression of the compressible sealing member in a direction substantially perpendicular to the wall when the door is in a closed position; and a mechanism for restricting the exposure of the compressible sealing member to an environment on a process chamber side of the housing.

Abstract: A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone.

Abstract: An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly further includes a gas box coupled to the gas distribution plate, in which the gas box is configured to supply the gases into the plurality of holes. The assembly further includes a means for reducing heat transfer from the gas box to the gas distribution plate.

Abstract: Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.