Patents by Inventor Luqiao Liu

Luqiao Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin hall effect assisted spin transfer torque magnetic random access memory
    Patent number: 8896041
    Abstract: Embodiments are directed to providing a spin hall effect (SHE) assisted spin transfer torque magnetic random access memory (STT-MRAM) device by coupling a magnetic tunnel junction (MTJ) to a SHE material, and coupling the SHE material to a transistor. Embodiments are directed to a spin transfer torque magnetic random access memory (STT-MRAM) device comprising: a magnetic tunnel junction (MTJ) coupled to a spin hall effect (SHE) material, and a transistor coupled to the SHE material.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: November 25, 2014
    Assignee: International Business Machines Corporation
    Inventors: John K. De Brosse, Luqiao Liu, Daniel Worledge
  • Spin hall effect assisted spin transfer torque magnetic random access memory
    Patent number: 8889433
    Abstract: Embodiments are directed to providing a spin hall effect (SHE) assisted spin transfer torque magnetic random access memory (STT-MRAM) device by coupling a magnetic tunnel junction (MTJ) to a SHE material, and coupling the SHE material to a transistor. Embodiments are directed to a spin transfer torque magnetic random access memory (STT-MRAM) device comprising: a magnetic tunnel junction (MTJ) coupled to a spin hall effect (SHE) material, and a transistor coupled to the SHE material.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: November 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: John K. De Brosse, Luqiao Liu, Daniel Worledge
  • SPIN HALL EFFECT ASSISTED SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY
    Publication number: 20140264513
    Abstract: Embodiments are directed to providing a spin hall effect (SHE) assisted spin transfer torque magnetic random access memory (STT-MRAM) device by coupling a magnetic tunnel junction (MTJ) to a SHE material, and coupling the SHE material to a transistor. Embodiments are directed to a spin transfer torque magnetic random access memory (STT-MRAM) device comprising: a magnetic tunnel junction (MTJ) coupled to a spin hall effect (SHE) material, and a transistor coupled to the SHE material.
    Type: Application
    Filed: August 15, 2013
    Publication date: September 18, 2014
    Applicant: International Business Machines Corporation
    Inventors: John K. De Brosse, Luqiao Liu, Daniel Worledge
  • SPIN HALL EFFECT ASSISTED SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY
    Publication number: 20140264511
    Abstract: Embodiments are directed to providing a spin hall effect (SHE) assisted spin transfer torque magnetic random access memory (STT-MRAM) device by coupling a magnetic tunnel junction (MTJ) to a SHE material, and coupling the SHE material to a transistor. Embodiments are directed to a spin transfer torque magnetic random access memory (STT-MRAM) device comprising: a magnetic tunnel junction (MTJ) coupled to a spin hall effect (SHE) material, and a transistor coupled to the SHE material.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John K. De Brosse, Luqiao Liu, Daniel Worledge
  • SPIN HALL EFFECT MAGNETIC APPARATUS, METHOD AND APPLICATIONS
    Publication number: 20140169088
    Abstract: An ST-MRAM structure, a method for fabricating the ST-MRAM structure and a method for operating an ST-MRAM device that results from the ST-MRAM structure each utilize a spin Hall effect base layer that contacts a magnetic free layer and effects a magnetic moment switching within the magnetic free layer as a result of a lateral switching current within the spin Hall effect base layer. This resulting ST-MRAM device uses an independent sense current and sense voltage through a magnetoresistive stack that includes a pinned layer, a non-magnetic spacer layer and the magnetic free layer which contacts the spin Hall effect base layer. Desirable non-magnetic conductor materials for the spin Hall effect base layer include certain types of tantalum materials and tungsten materials that have a spin diffusion length no greater than about five times the thickness of the spin Hall effect base layer and a spin Hall angle at least about 0.05.
    Type: Application
    Filed: August 17, 2012
    Publication date: June 19, 2014
    Applicant: CORNELL UNIVERSITY
    Inventors: Robert A. Buhrman, Luqiao Liu, Daniel C. Ralph, Chi-Feng Pai