Abstract: A method for producing semiconductor bodies having a glass covered defined dge profile from a semiconductor wafer comprising the steps of applying etch resistant protective coating to a surface oxide layer on the semiconductor wafer, cutting groove-shaped recesses in the wafer in a predetermined pattern, etching the wafer through the recesses to produce a deep portion passing through at least one pn-junction, removing the surface oxide layer and etch resistant coating, applying an insulating and stabilizing glass coating to the side faces of the deep portion of the wafer, applying a contact metal coating, dividing the wafer into semiconductor bodies along the center planes of selected deep portions of the wafer and covering the surface of the semiconductor bodies with an insulating lacquer at those portions which have been exposed by the dividing step.

Abstract: In a surfacing process for the stabilization of semiconductor wafers in which a glass coating is provided on the surface of the semiconductor at least in the region where a pn-junction thereof extends to the surface, the glass coating is provided by directly forming on the surface of the semiconductor a layer of the oxide of the semiconductor material, applying to the semiconductor oxide layer, by melting, a base layer composed of a common glass having a thermal coefficient of expansion matched to that of the semiconductor material, and applying to the base layer a terminating layer of a glass which has a thermal coefficient of expansion lower than that of the semiconductor material, by melting such glass at a temperature in a higher temperature range adjacent that required for melting the glass of the base layer.