Abstract: A resistive memory device includes a first bit line group including a first edge bit line, a second bit line group including a second edge bit line, and a first boundary transistor configured to apply a non-selection voltage to the second edge bit line according to a selection of the first edge bit line. The first edge bit line of the first bit line group is disposed closest to the second bit line group, and the second edge bit line of the second bit line group is disposed closest to the first bit line group.

Abstract: A motion state monitoring system, a training support system, a motion state monitoring method, and a program capable of suitably managing measurement results according to an attaching direction of a sensor are provided. A motion state monitoring system according to the present disclosure monitors a motion state of a target part of a subject's body. The motion state monitoring system includes an acquisition unit, an attaching direction detection unit, and a control processing unit. The acquisition unit acquires sensing information of a sensor attached to the target part. The attaching direction detection unit detects an attaching direction of the sensor. The control processing unit outputs information related to the sensing information in association with the attaching direction.

Abstract: Provided is a method for producing an alkaline earth metal formate, the method including a first step of reacting hydrogen and carbon dioxide with a carbonate or hydrogen carbonate of an alkaline earth metal using a homogeneous catalyst in the presence of a solvent in a two-phase system in which an organic phase and an aqueous phase are present in a separated state in the solvent to produce an alkaline earth metal formate.

Abstract: The invention relates to a method for producing a formate, the method including reacting hydrogen with carbon dioxide, a hydrogen carbonate or a carbonate using a catalyst in the presence of a solvent, wherein the reaction is a two-phase system in which an organic solvent and an aqueous solvent are present in a separated state in the solvent, and the catalyst is at least one selected from a ruthenium complex represented by the formula (1) in the specification, a tautomer or stereoisomer thereof, and a salt compound of the complex, tautomer or stereoisomer.

Abstract: The invention relates to a method for producing a formate, the method including a first step of reacting hydrogen with carbon dioxide, a hydrogen carbonate or a carbonate using a catalyst in the presence of a solvent to form a formate in the reaction liquid, wherein the reaction is a two-phase system in which an organic phase and an aqueous phase are present in a separated state in the solvent, and a base concentration in the reaction is 2.5 mol/L or more.

Abstract: A control apparatus includes a controller. The controller is configured to obtain a measurement value of a state of mechanical equipment corresponding to a period in which the mechanical equipment reaches a second state from a first state, extract at least one predetermined feature value by using the measurement value, and extract data for machine learning from data of the at least one predetermined feature value on a basis of a separation degree for distinguishing the first state and the second state from each other.

Abstract: A substrate processing technique including: a module including a gas supplier having an upstream side gas guide and a supply structure, a reaction tube communicating with the gas supplier, and a gas exhauster; a supply pipe connected to the gas supplier, and an exhaust pipe connected to the gas exhauster; a carry chamber adjacent to a plurality of the modules; and a piping arrangement region in which the supply pipe or the exhaust pipe can be arranged, in which the reaction tube is disposed at a position overlapping the carry chamber, when the supply pipe is disposed in the piping arrangement region, the gas exhauster is disposed at a position oblique to the shaft and not overlapping the carry chamber, and when the exhaust pipe is disposed in the piping arrangement area, the gas supplier is disposed at a position oblique to the shaft and not overlapping the carry chamber.

Abstract: A three-dimensional (3D) memory device includes a memory cell array, a first sense amplifier and a second sense amplifier. The memory cell array includes lower memory cells respectively arranged in regions where lower word lines intersect with bit lines and upper memory cells respectively arranged in regions where upper word lines intersect with the bit lines. The first sense amplifier is connected to a first lower word line and performs a data sensing operation on a first lower memory cell connected between a first bit line and the first lower word line. The second sense amplifier is connected to a first upper word line and performs a data sensing operation on a first upper memory cell connected between the first bit line and the first upper word line. The data sensing operations of the first and second sense amplifiers are performed in parallel.

Abstract: A memory device includes a memory cell array and a page buffer circuit, wherein the page buffer circuit includes page buffer units including upper page buffer units and lower page buffer units and cache units arranged between the upper page buffer unit and the lower page buffer units. The cache units include upper cache units and lower cache units. Each page buffer unit includes a sensing node and a pass transistor. The upper cache units share a first combined sensing node, and, the lower cache units share a second combined sensing node. In a data transmission period, sensing nodes respectively included the page buffer units are electrically connected to one another through serial connections of the pass transistors respectively included in the page buffer units.

Abstract: The present invention relates to a formate production method including: a first step of producing a formate by causing a reaction between carbon dioxide and hydrogen in a solution containing a solvent, a catalyst dissolved in the solvent, and a metal salt or an organic salt; and a second step of separating, by a separation membrane, the catalyst from a reaction solution obtained in the first step, in which the catalyst contains at least one metal element selected from the group consisting of metal elements belonging to Group 8, Group 9, and Group 10 of a periodic table.

Abstract: The present invention relates to a hydrogen gas production method, which includes: a first step of concentrating an aqueous solution containing an alkali metal formate; a second step of protonating at least a part of the alkali metal formate by electrodialysis to produce a formic acid; and a third step of decomposing the formic acid to produce a hydrogen gas.

Abstract: There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

Abstract: The present disclosure relates to a hydrogen gas production method including: a first step of generating a mixed gas containing hydrogen and carbon dioxide from a hydrogen storage agent by dehydrogenation reaction using a catalyst in a reactor; a second step of purifying the generated mixed gas to acquire a gas having a high hydrogen concentration; a third step of separating a solution in the reactor into a solution enriched with the catalyst and a permeate using a separation membrane unit; and a fourth step of supplying the solution enriched with the catalyst to the reactor for reusing in the first step.

Abstract: A resistive memory device includes a first bit line group including a first edge bit line, a second bit line group including a second edge bit line, and a first boundary transistor configured to apply a non-selection voltage to the second edge bit line according to a selection of the first edge bit line. The first edge bit line of the first bit line group is disposed closest to the second bit line group, and the second edge bit line of the second bit line group is disposed closest to the first bit line group.

Abstract: A nonvolatile memory device includes: a memory cell array in which a plurality of memory cells are arranged at intersections between a plurality of word-lines and a plurality of bit-lines; and a word-line select circuit configured to, in response to a first global word-line select signal, start reading a target memory cell connected to a target word-line and provide a reading result of the target memory cell to a sensing line through at least one adjacent word-line that is adjacent to and coupled to the target word-line.

Abstract: A three-dimensional (3D) memory device includes a memory cell array, a first sense amplifier and a second sense amplifier. The memory cell array includes lower memory cells respectively arranged in regions where lower word lines intersect with bit lines and upper memory cells respectively arranged in regions where upper word lines intersect with the bit lines. The first sense amplifier is connected to a first lower word line and performs a data sensing operation on a first lower memory cell connected between a first bit line and the first lower word line. The second sense amplifier is connected to a first upper word line and performs a data sensing operation on a first upper memory cell connected between the first bit line and the first upper word line. The data sensing operations of the first and second sense amplifiers are performed in parallel.

Abstract: A resistive memory device includes a first bit line group including a first edge bit line, a second bit line group including a second edge bit line, and a first boundary transistor configured to apply a non-selection voltage to the second edge bit line according to a selection of the first edge bit line. The first edge bit line of the first bit line group is disposed closest to the second bit line group, and the second edge bit line of the second bit line group is disposed closest to the first bit line group.

Abstract: A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.

Abstract: A read method of a nonvolatile memory device is provided. The method includes storing data sensed from selected memory cells of the nonvolatile memory device into a page buffer, performing an error decoding operation by performing error detection on the sensed data to detect and error, correcting the detected error if the error is detected, and overwriting the page buffer with the corrected data, and de-randomizing data stored in the page buffer by using a seed after the error decoding operation has completed.

Abstract: According to the technique of the present disclosure, there is provided a substrate processing apparatus capable of improving thickness uniformity of a film formed on each substrate. The apparatus includes a substrate retainer; a reaction tube; a vertical driver for moving the substrate retainer into or out of the reaction tube; a heater provided around the reaction tube; a gas supplier having a plurality of gas feeders corresponding to a plurality of substrates, respectively, supported by the substrate retainer; an exhauster through which a gas is exhausted from the reaction tube; and a controller capable of controlling the vertical driver and the gas supplier such that the gas is capable of being supplied through the plurality of gas feeders while maintaining a relative position of a substrate with respect to a gas feeder corresponding thereto at a first position or at a second position different from the first position.