Patents by Inventor Makoto Iwai

Makoto Iwai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10385937
    Abstract: A disc brake caliper is basically provided with a caliper housing, a brake pad and an intermediate member. The caliper housing defines a slot that is configured to receive a brake rotor. The caliper housing is made of a first material. The brake pad includes a mounting plate. The brake pad is disposed in the slot. The intermediate member is disposed between the caliper housing and the brake pad. The intermediate member is made of a second material having a thermal conductivity that is smaller than a thermal conductivity of the first material.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: August 20, 2019
    Assignee: Shimano Inc.
    Inventors: Toru Iwai, Makoto Souwa, Yoshikazu Kashimoto
  • Patent number: 10370757
    Abstract: A thin substrate processing device include a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: August 6, 2019
    Assignee: ULVAC, INC.
    Inventors: Tetsushi Fujinaga, Masahiro Matsumoto, Makoto Arai, Eriko Mase, Harunori Iwai, Koji Takahashi, Atsuhito Ihori
  • Patent number: 10347755
    Abstract: Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1×106 ?·cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1×1017/cm3 or less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlxInyGa1-x-yN (0?x?1, 0?y?1).
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: July 9, 2019
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yoshitaka Kuraoka, Mikiya Ichimura, Makoto Iwai
  • Publication number: 20190197608
    Abstract: A storage battery module rental system includes a storage battery module prepared in each providing point that is dispersedly distributed and that can be rented to a user, an acquisition unit configured to acquire individual information of a plurality of the users and module information from the storage battery module, the user being a rentee candidate of the storage battery module, a determining unit configured to determine an incentive given for renting the storage battery module based on the individual information and the module information in such a way that the incentive could differ for each user; and a notifying unit configured to notify the user of the incentive determined by the determining unit for each of the users.
    Type: Application
    Filed: October 29, 2018
    Publication date: June 27, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Satoshi IWAI, Koji YAMADA, Marie ISHIKAWA, Akinori SATO, Masanori ISHIGAKI, Shuji TOMURA, Shigeaki GOTO, Makoto KUSAKABE, Tomoki NISHI, Akira SHICHI, Hiroyuki YAMADA
  • Publication number: 20190035482
    Abstract: A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.
    Type: Application
    Filed: October 2, 2018
    Publication date: January 31, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Makoto IWAI, Hiroshi NAKAMURA
  • Patent number: 10170202
    Abstract: A memory system includes a semiconductor storage device that includes a plurality of blocks, and a controller configured to designate a block of the semiconductor storage device as a partial bad block if, after performing a write operation on the block, status information read from the semiconductor storage device indicates that the write operation failed, and read data that is returned when a read operation is performed on data written pursuant to the write operation has errors that are correctable. The controller is configured to manage a partial bad block differently from a bad block.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: January 1, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Makoto Iwai, Hideaki Tsunashima, Akio Okazaki
  • Publication number: 20180348022
    Abstract: The sensor adaptor includes a case body of which a front end is closed and a rear end is open, a cap body being engageable with the rear end of the case body, a seal member interposed between the case body and the cap body, and a fixing portion configured to fix the case body to the mounting portion. A part of the sensor is inserted into an accommodation space of the case body, and the remaining portion of the sensor is drawn out to the outside via an opening of the cap body. The seal member is disposed on a rear end side of the case body to surround the sensor. The seal member is brought into close contact with the case body and the sensor. Accordingly, a gap between the part of the sensor and the case body is sealed from an external space by the seal member.
    Type: Application
    Filed: February 8, 2018
    Publication date: December 6, 2018
    Applicant: OMRON Corporation
    Inventors: Yuki USHIRO, Hiroto KATSURA, Makoto IWAI, Hiroyuki TSUCHIDA, Yusuke NAKAYAMA
  • Patent number: 10109359
    Abstract: A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: October 23, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Makoto Iwai, Hiroshi Nakamura
  • Publication number: 20180274128
    Abstract: A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b. The low carrier concentration region 5 has a carrier concentration of 1017/cm3 or lower and a defect density of 107/cm2 or lower. The high carrier concentration region 4 has a carrier concentration of 1019/cm3 or higher and a defect density of 108/cm2 or higher. The thick film 3 has a carrier concentration of 1018/cm3 or higher and 1019/cm3 or lower and a defect density of 107/cm2 or lower.
    Type: Application
    Filed: May 29, 2018
    Publication date: September 27, 2018
    Inventors: Makoto IWAI, Takashi YOSHINO
  • Publication number: 20180230172
    Abstract: An organic silicon compound is disclosed which is represented by a formula : (R13SiO)3SiR2-[SiR32O]y[SiR32]w-R4-R5, wherein each of R1 and R3 is a group independently selected from the group consisting of alkyl groups, alkenyl groups, aryl groups, aralkyl groups and alkoxy groups having 1 to 20 carbon atoms, R2 is a divalent hydrocarbon group or an oxygen atom, R4 is a divalent hydrocarbon group, or a direct bond to a silicon (Si) atom, R5 is a monovalent group represented by (R6O)qR7(3-q)Si or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and each of R6 and R7 is a group independently selected from the group consisting of alkyl groups, alkenyl groups, aryl groups, aralkyl groups and alkoxy groups having 1 to 20 carbon atoms, and q is an integer between 1 and 3, y is an integer between 0 and 200, and w is 0 or 1.
    Type: Application
    Filed: August 11, 2014
    Publication date: August 16, 2018
    Inventors: Haruhiko FURUKAWA, Makoto IWAI, Kousei IWAKAWA, Eiji KITAURA, Kazuhiro NISHIJIMA, Tadashi OKAWA
  • Patent number: 10041186
    Abstract: It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.
    Type: Grant
    Filed: August 17, 2016
    Date of Patent: August 7, 2018
    Assignee: NGK INSULATORS, LTD.
    Inventors: Katsuhiro Imai, Makoto Iwai, Masahiro Sakai, Takanao Shimodaira, Shuhei Higashihara, Takayuki Hirao
  • Patent number: 10032958
    Abstract: A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: July 24, 2018
    Assignee: NGK INSULATORS, LTD.
    Inventors: Shuuhei Higashihara, Makoto Iwai
  • Publication number: 20180202067
    Abstract: An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 ?m and a width of 5 to 100 ?m, and the recesses have a bottom thickness of 2 ?m or more and a width of 50 to 500 ?m.
    Type: Application
    Filed: March 14, 2018
    Publication date: July 19, 2018
    Inventors: Takayuki HIRAO, Makoto IWAI, Katsuhiro IMAI, Takashi YOSHINO
  • Patent number: 10000864
    Abstract: A crystal layer of a nitride of a group 13 element includes a pair of main surfaces. The crystal layer includes high carrier concentration regions having a carrier concentration of 1×1018/cm3 or more and low carrier concentration regions having a carrier concentration of 9×1017/cm3 or less, viewed in a cross section perpendicular to the main surfaces of the crystal layer. Each of the low carrier concentration regions is extended in an elongated shape. The low carrier concentration regions include association parts. The low carrier concentration regions are extended continuously between the pair of the main surfaces.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: June 19, 2018
    Assignee: NGK INSULATORS, LTD.
    Inventors: Makoto Iwai, Takashi Yoshino
  • Patent number: 9960316
    Abstract: A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0?(an average thickness (?m) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)?10.0 . . . (1); 0.1? a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate)2?0.6 . . . (2); 1.10?a maximum value (?m) of a thickness of said layer of said nitride of said group 13 element/a minimum value (?m) of said thickness of said layer of said nitride of said group 13 element . . .
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: May 1, 2018
    Assignee: NGK INSULATORS, LTD.
    Inventors: Katsuhiro Imai, Makoto Iwai, Takanao Shimodaira
  • Patent number: 9941442
    Abstract: A crystal substrate is composed of a crystal of a nitride of a group 13 element and has a first main face and a second main face. The crystal substrate includes a low carrier concentration region and a high carrier concentration region both extending between the first main face and second main face. The low carrier concentration region has a carrier concentration of 1018/cm3 or lower and a defect density of 107/cm2 or lower. The high carrier concentration region has a carrier concentration of 1019/cm3 or higher and a defect density of 108/cm2 or higher.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: April 10, 2018
    Assignee: NGK INSULATORS, LTD.
    Inventors: Makoto Iwai, Takashi Yoshino
  • Patent number: 9882042
    Abstract: Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1×106 ?·cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1×1017/cm3 or less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlxInyGa1?x?yN (0?x?1, 0?y?1).
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: January 30, 2018
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yoshitaka Kuraoka, Mikiya Ichimura, Makoto Iwai
  • Publication number: 20170268125
    Abstract: A crystal layer of a nitride of a group 13 element includes a pair of main surfaces. The crystal layer includes high carrier concentration regions having a carrier concentration of 1×1018/cm3 or more and low carrier concentration regions having a carrier concentration of 9×1017/cm3 or less, viewed in a cross section perpendicular to the main surfaces of the crystal layer. Each of the low carrier concentration regions is extended in an elongated shape. The low carrier concentration regions include association parts. The low carrier concentration regions are extended continuously between the pair of the main surfaces.
    Type: Application
    Filed: June 8, 2017
    Publication date: September 21, 2017
    Applicant: NGK INSULATORS, LTD.
    Inventors: Makoto Iwai, Takashi Yoshino
  • Publication number: 20170263815
    Abstract: A crystal substrate is composed of a crystal of a nitride of a group 13 element and has a first main face and a second main face. The crystal substrate includes a low carrier concentration region and a high carrier concentration region both extending between the first main face and second main face. The low carrier concentration region has a carrier concentration of 1018/cm3 or lower and a defect density of 107/cm2 or lower. The high carrier concentration region has a carrier concentration of 1019/cm3 or higher and a defect density of 108/cm2 or higher.
    Type: Application
    Filed: May 31, 2017
    Publication date: September 14, 2017
    Applicant: NGK INSULATORS, LTD.
    Inventors: Makoto Iwai, Takashi Yoshino
  • Publication number: 20170263810
    Abstract: A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0?(an average thickness (?m) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)?10.0 . . . (1); 0.1? a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate)20.6 . . . (2); 1.10?a maximum value (?m) of a thickness of said layer of said nitride of said group 13 element/a minimum value (?m) of said thickness of said layer of said nitride of said group 13 element . . .
    Type: Application
    Filed: May 31, 2017
    Publication date: September 14, 2017
    Applicant: NGK INSULATORS, LTD.
    Inventors: Katsuhiro Imai, Makoto Iwai, Takanao Shimodaira