Abstract: A packaging material used for a bag for transporting of a silicon material is a laminate in which a first resin base, barrier, second resin base, resin, and sealant layers are laminated in that order. A resin layer indentation elastic modulus is smaller than an indentation elastic modulus of each of the first and second resin base layers by one or more orders of magnitude, a sealant layer indentation elastic modulus is smaller than a first resin base layer indentation elastic modulus of and a second resin base layer indentation elastic modulus by one or more orders of magnitude, and a difference between the first resin base layer indentation elastic modulus and the second resin base layer indentation elastic modulus is smaller than a difference between the second resin base layer indentation elastic modulus and the indentation elastic modulus of the resin layer.

Abstract: A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuK? radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2? of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2? of more than 24° to 70° is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.

Abstract: A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuK? radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2? of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2? of more than 24° to 70° is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.