Abstract: A color filter substrate includes first and second color filters exhibiting different colors and a light blocking portion. The light blocking portion includes a first transmissive film, a first reflective film on an upper layer side of the first transmissive film, a second transmissive film on an upper layer side of the first reflective film, and a second reflective film on an upper layer side of the second transmissive film and being thicker than the first reflective film. The first transmissive film includes a first bottom surface and a first side surface being inclined at a first angle with respect to the first bottom surface. The second reflective film includes a second bottom surface extending parallel to the first bottom surface and a second side surface being inclined at a second angle with respect to the second bottom surface. The first angle and the second angle are acute angles.

Abstract: A photoelectric conversion panel includes multiple thin-film transistors (TFTs) formed on an substrate, photodiodes respectively connected to the TFTs, and a metal layer formed on a light incident side of the photodiodes. The metal layer is formed in a position to overlap a subset of the photodiodes in a plan view.

Abstract: In a manufacturing method of a photoelectric conversion panel, a contact hole CH3 that exposes a part of an upper face of a photodiode and a contact hole CH2 that exposes a source connection electrode are formed in a first flattening film and in inorganic insulating films 105a to 105c, an inorganic insulating film 107 is formed, contact holes CH2a and CH3a are formed in the contact holes CH2 and CH3, respectively, and a bias line and a data line are formed in the contact holes CH2a and CH3a, respectively.

Abstract: A manufacturing method of a photoelectric conversion panel includes forming a short ring, forming a plurality of data lines connected to a TFT and the short ring, forming a first conductive portion of a bias line connected to the photodiode in an upper layer above the photodiode, electrically blocking the short ring and the TFT from each other by cutting the plurality of data lines after the forming of the first conductive portion, and forming an inorganic insulating film in a blocking portion created by the plurality of data lines being cut.

Abstract: A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; and a first inorganic insulating film formed so as to cover at least a part of the first organic film, wherein the first inorganic insulating film has a through hole that exposes a part of the first organic film.

Abstract: An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

Abstract: In a manufacturing method of a photoelectric conversion panel, a contact hole CH3 that exposes a part of an upper face of a photodiode and a contact hole CH2 that exposes a source connection electrode are formed in a first flattening film and in inorganic insulating films 105a to 105c, an inorganic insulating film 107 is formed, contact holes CH2a and CH3a are formed in the contact holes CH2 and CH3, respectively, and a bias line and a data line are formed in the contact holes CH2a and CH3a, respectively.

Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Abstract: According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; and a first inorganic insulating film formed so as to cover at least a part of the first organic film, wherein the first inorganic insulating film has a through hole that exposes a part of the first organic film.

Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Abstract: A photoelectric conversion panel includes multiple thin-film transistors (TFTs) formed on an substrate, photodiodes respectively connected to the TFTs, and a metal layer formed on a light incident side of the photodiodes. The metal layer is formed in a position to overlap a subset of the photodiodes in a plan view.

Abstract: According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Abstract: An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

Abstract: A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Abstract: An imaging panel includes multiple photoelectric conversion elements respectively mounted in multiple pixels defined by multiple gate lines and data lines formed on a substrate. The imaging panel further includes, outside pixel regions defined by the pixels, multiple first non-linear elements respectively connected to the data lines, multiple first protective wiring respectively connected to the data lines, and a first common wiring connected to the first non-linear elements. Each of the first non-linear elements is connected in a reverse-biased state between the data line connected to the first non-linear element and the first common wiring. Each of the first protective wiring extends to the edge of the substrate.

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first inorganic insulating film 106, a first planarizing film 107, and a second inorganic insulating film 108a and/or 109 on a substrate 101. The first inorganic insulating film 106, the first planarizing film 107, and the second inorganic insulating film 108a and/or 109 are provided up to an end P2 of the substrate. The first inorganic insulating film 106 covers a surface of the photoelectric conversion element 12, the first planarizing film 107 has a tapered portion, and an angle ? between the tapered portion and the first inorganic insulating film 106 is an acute angle. The second inorganic insulating film 108a and/or 109 covers the first planarizing film 107.