Abstract: The present disclosure includes a method of producing a cell population containing Chimeric Antigen Receptor (CAR)-expressing immune cells, comprising co-culturing CAR-expressing immune cells and cells expressing a target antigen of the CAR, wherein the CAR-expressing immune cells are cells into which a CAR gene has been introduced and the target antigen-expressing cells are normal blood cells that have been engineered to express the target antigen.

Abstract: An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

Abstract: A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Abstract: An imaging panel includes multiple photoelectric conversion elements respectively mounted in multiple pixels defined by multiple gate lines and data lines formed on a substrate. The imaging panel further includes, outside pixel regions defined by the pixels, multiple first non-linear elements respectively connected to the data lines, multiple first protective wiring respectively connected to the data lines, and a first common wiring connected to the first non-linear elements. Each of the first non-linear elements is connected in a reverse-biased state between the data line connected to the first non-linear element and the first common wiring. Each of the first protective wiring extends to the edge of the substrate.

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first inorganic insulating film 106, a first planarizing film 107, and a second inorganic insulating film 108a and/or 109 on a substrate 101. The first inorganic insulating film 106, the first planarizing film 107, and the second inorganic insulating film 108a and/or 109 are provided up to an end P2 of the substrate. The first inorganic insulating film 106 covers a surface of the photoelectric conversion element 12, the first planarizing film 107 has a tapered portion, and an angle ? between the tapered portion and the first inorganic insulating film 106 is an acute angle. The second inorganic insulating film 108a and/or 109 covers the first planarizing film 107.

Abstract: An active matrix substrate includes: a photoelectric conversion element 15; an electrode 14b provided with a first opening h1 and disposed on one surface of the photoelectric conversion element 15; an organic insulating film 106 provided with a second opening h2 and covering the photoelectric conversion element 15 and the electrode 14b; and a conductive film 16 for supplying a bias voltage to the electrode 14b. The first opening h1 and the second opening h2 overlap each other when viewed in plan view. The conductive film 16 is provided inside the first opening h1 and the second opening h2 so as to be in contact with the electrode 14b.

Abstract: An imaging panel includes an active matrix substrate that has a plurality of pixels each provided with a photoelectric conversion element, and the pixels each include a first electrode provided at a first surface of the photoelectric conversion element, a first flattening film provided above the photoelectric conversion element and the first electrode, and a bias conductive part provided below the first flattening film. The bias conductive part is connected to the first electrode and applies bias voltage to the first electrode. The first flattening film has no opening in a region overlapped with a pixel region.

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first planarizing film 107, a first inorganic insulating film 108a, and a bias wire 16. The first planarizing film 107 covers the photoelectric conversion element 12 and has a first opening 107h at a position at which the first opening 107h overlaps with the photoelectric conversion element 12 in plan view. The first inorganic insulating film 108a has a second opening on an inner side of the first opening h and covers a surface of the first planarizing film 107. The bias wire 16 is provided on a first inorganic insulating film 108a and is connected to the photoelectric conversion element 12 via the second opening CH2.

Abstract: Provided are an X-ray imaging panel capable of suppressing a leak current of a photoelectric conversion layer while reducing the number of steps for manufacturing the imaging panel, and a method for manufacturing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays passing through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103 and 104 covering the thin film transistor 13, a photoelectric conversion layer 15 converting scintillation light into a charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, on a substrate 101. End portions of the lower electrode 14 are disposed on an inner side than the end portions of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected to each other via a contact hole CH1 formed in the passivation films 103 and 104, in a region in which the photoelectric conversion layer 15 is provided.

Abstract: An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

Abstract: An imaging panel includes: a photoelectric converting element on a substrate; a first wiring layer that does not overlap the element in plan view and that is provided more adjacent to the substrate than an anode of the element; and a second wiring layer provided at an opposite side to the substrate with respect to the element. A first insulating layer that overlaps the element and the first wiring layer in plan view is provided between the wiring layers. First and second openings that penetrate the first insulating layer are provided, the wiring layers are connected in the first opening, and the anode and the second wiring layer are connected in the second opening. An electrically independent adjustment metal layer is arranged at a position that overlaps the first opening in plan view and that is more adjacent to the substrate than the first wiring layer.

Abstract: An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.

Abstract: The scanning antenna (1000) is a scanning antenna in which antenna units (U) are arranged, the scanning antenna including: a TFT substrate (101) including: a first dielectric substrate (1), TFTs, gate bus lines, source bus lines, and patch electrodes (15); a slot substrate (201) including: a second dielectric substrate (51), and a slot electrode (55); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (65). The slot electrode includes slots (57) arranged in correspondence with the plurality of patch electrodes, and a thickness of the second dielectric substrate (51) is smaller than the thickness of the first dielectric substrate (1) at least in a region where the antenna units (U) are arranged.

Abstract: An imaging panel includes multiple photoelectric conversion elements respectively mounted in multiple pixels defined by multiple gate lines and data lines formed on a substrate. The imaging panel further includes, outside pixel regions defined by the pixels, multiple first non-linear elements respectively connected to the data lines, multiple first protective wiring respectively connected to the data lines, and a first common wiring connected to the first non-linear elements. Each of the first non-linear elements is connected in a reverse-biased state between the data line connected to the first non-linear element and the first common wiring. Each of the first protective wiring extends to the edge of the substrate.

Abstract: A scanning antenna includes a TFT substrate including a first dielectric substrate, a plurality of TFTs, a plurality of gate bus lines, a plurality of source bus lines, and a plurality of patch electrodes, a slot substrate including a second dielectric substrate and a slot electrode (55) formed on the first main surface of the second dielectric substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate provided opposing a second main surface opposite to the first main surface of the second dielectric substrate via a dielectric layer, and the slot electrode includes a plurality of slots arranged in accordance with the plurality of patch electrodes, and a groove configured to divide the slot electrode into two or more sections, and the TFT substrate includes an opposing metal part arranged opposing the groove, and when viewed from a normal line direction of the first dielectric substrate, the groove is covered with the opposing metal part in th

Abstract: The scanning antenna (1000) is a scanning antenna in which antenna units (U) are arranged, the scanning antenna including: a TFT substrate (101) including: a first dielectric substrate (1), TFTs, gate bus lines, source bus lines, and patch electrodes (15); a slot substrate (201) including: a second dielectric substrate (51), and a slot electrode (55); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (65). The slot electrode includes slots (57) arranged in correspondence with the plurality of patch electrodes, and a thickness of the second dielectric substrate (51) is smaller than the thickness of the first dielectric substrate (1) at least in a region where the antenna units (U) are arranged.

Abstract: A scanning antenna including: a TFT substrate including a first dielectric substrate, a TFT, a gate bus line, a source bus line, and a patch electrode; a slot substrate including a second dielectric substrate and a slot electrode formed on a first main surface of the second dielectric substrate; a liquid crystal layer provided between the TFT substrate and the slot substrate; and a reflective conductive plate. The scanning antenna has a tiling structure in which a plurality of scanning antenna portions are bonded together, and each of the plurality of scanning antenna portions includes a TFT substrate portion and a slot substrate portion.

Abstract: An active matrix substrate includes: a photoelectric conversion element 15; an electrode 14b provided with a first opening h1 and disposed on one surface of the photoelectric conversion element 15; an organic insulating film 106 provided with a second opening h2 and covering the photoelectric conversion element 15 and the electrode 14b; and a conductive film 16 for supplying a bias voltage to the electrode 14b. The first opening h1 and the second opening h2 overlap each other when viewed in plan view. The conductive film 16 is provided inside the first opening h1 and the second opening h2 so as to be in contact with the electrode 14b.

Abstract: A scanning antenna is a scanning antenna in which antenna units U are arranged, and includes a TFT substrate including a first dielectric substrate, TFTs, a plurality of gate bus lines, source bus lines, and patch electrodes; a slot substrate including a second dielectric substrate, and a slot electrode formed on a first main surface of the second dielectric substrate; a liquid crystal layer LC provided between the TFT substrate and the slot substrate; and a reflective conductive plate provided opposing a second main surface of the second dielectric substrate opposite to the first main surface via a dielectric layer. The slot electrode includes slots arranged in correspondence with the plurality of patch electrodes, and each of the patch electrodes is connected to a drain of a corresponding TFT and is supplied with a data signal from a corresponding source bus line while selected by a scanning signal supplied from the gate bus line of the corresponding TFT.