Abstract: A management system for semiconductor fabrication devices is provided with a sensor for always collecting management information from a fabrication device provided in a semiconductor fabrication process line, and a determiner for monitoring the management information collected by the sensor as a time-sequential measured value pattern, and for comparing the measured value pattern with a set value pattern registered beforehand in accordance with the management information. This enables to presume causes or the like of failures based on data, and hence, to immediately identify the causes of even sudden failures, thereby allowing measures to be immediately taken. Consequently, the process line can be stably operated.

Abstract: When a trigger signal is outputted from a simulated gun 30A to 30D, a trigger image is displayed on image monitor means 20 in response to the trigger signal. In response to a timing signal of the simulated gun 30A to 30D, an indicated position, a value of an image display counter 12 at the time is set in a register 13. Coordinate values of the indicated position of the simulated gun 30A to 30D set in the register 13 is inputted to a game control unit 14 in a horizontal flyback time of a scanning line. The indicated position detection processing for detecting indicated positions indicated on the image monitor means 20 by the simulated guns 30A to 30D is performed at every horizontal scan displaying the video screen. The video screen indicated position detecting method and device is quick in responding to an indication even when a plurality of indicated positions are detected, without increasing costs of the device.

Abstract: A vehicle display lighting device the lighting device includes a light emitting assembly arranged along the outer circumference of the display dial in front of the front surface. The light emitting assembly directs lights across at least the front surface of the display dial. The lighting device also includes a control assembly for controlling the operation of the light emitting assembly. The light emitting assembly may one or more light sources for emitting light, and a transmitting assembly for radiating the light from the light source across at least the front surface of the display dial.

Abstract: A planar light emitting device has a planar light emitter. It has a layered structure composed of a transparent body and a semi-transparent body. The transparent body is made of a transparent synthetic resin containing no light scattering material. The semi-transparent body is made of a semi-transparent synthetic resin containing a light scattering material. The transparent body and the semi-transparent body are joined to form a diffusion layer therebetween. An LED array is disposed at one side of the planar light emitter. The diffusion layer has a sea-islands structure. An island resin has a dimension of 0.1 to 50 microns. The light entering the island resin attenuates therein without reflecting at once due to its complicated shape. Namely, the light entering the diffusion layer generates uniform brightness.

Abstract: A planar light emitting device has a planar light emitter. It has a layered structure composed of a transparent body and a semi-transparent body. The transparent body is made of a transparent synthetic resin containing no light scattering material. The semi-transparent body is made of a semi-transparent synthetic resin containing a light scattering material. The transparent body and the semi-transparent body are joined to form a diffusion layer therebetween. An LED array is disposed at one side of the planar light emitter. The diffusion layer has a sea-islands structure. An island resin has a dimension of 0.1 to 50 microns. The light entering the island resin attenuates therein without reflecting at once due to its complicated shape. Namely, the light entering the diffusion layer generates uniform brightness.

Abstract: An information indicating device having an LED and a light transmitting structure is disposed within a line of sight of a vehicle operator so as to transmit light from the LED to the vehicle while the operator is driving the vehicle. A distance sensor measures a distance between a vehicle body and an object near it. An emission control circuit controls the LED based on an output of the distance sensor, thereby indicating predetermined information, such as a distance warning to the operator. An indicating portion is disposed on an end of a corner pole or a fender marker to receive light from the LED and transmit light to the vehicle operator without requiring the vehicle operator to substantially look away from the direction the vehicle is traveling or a mirror showing the driver the vehicle's traveling direction.

Abstract: An LED display device has an indicator having a housing. The housing has at least one incident portion which receives light from at least one LED. The incident portion has a reflection surface at its inside surface. LEDs emit light from one side or one longitudinal end of the incident portion. A refraction plate may be provided to direct emission of the incident light for viewing by a user.

Abstract: A photo-catalyzer for deodorizing, cleaning, sterilizing, and water purifying operations includes a substrate, a titanium dioxide film disposed on the substrate and functioning as a photo-catalyst, and a light-emitting diode disposed adjacent to the titanium dioxide film and producing ultraviolet light having a wavelength from 360 to 400 nm onto the titanium dioxide film. The photo-catalyzer can be used in places where there is no sunlight because it is optionally provided with a light-emitting diode. The light-emitting diode does not require a large installation space because it is an extremely small light-emitting device. Hence, the photo-catalyzer has a compact structure and can be used easily anywhere, including small places. The substrate can be fabricated into a variety of useful appliances to take advantage of the strong oxidizing properties of the photo-catalyzer.

Abstract: A vehicle display device such as a speed meter including indicators, many segments illuminated in two or more colors by plural LEDs and an indicator control circuit. The indicators dispose the segments so as to display a variable such as a car speed in a bar graph or in the form of a number. The indicator control circuit displays the variable by controlling the lighting of the LEDs and changes an emitted light color of indication based on a fixed color changing reference value in accordance with a value of the variable. The control circuit controls a duty ratio of a supply current or a current value in a predetermined set value range determined on the basis of the color changing reference value. Namely, brightness of the emitted light color before a color change is gradually decreased, while brightness of the emitted light color after the color change is gradually increased.

Abstract: An LED display device having an LED array for a meter on a printed circuit board. A diffusing radiation lens array is disposed facing the LED array. A cover lens is overlapped on the lens array. The cover lens transmits LED light which passed through the lens array. The cover lens has at least a scale mark, a character and a sign. A sheet is interposed between the lens array and the cover lens. The sheet limits radiation of predetermined diffused light from the lens array while partially transmitting the diffused light. The cover lens has a scale mark dent and a character dent formed on its rear interior surface, and displays the scale mark and character by means of an LED light from another LED array.

Abstract: A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively.

Abstract: A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density i.sub.H -layer. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

Abstract: A light-emitting device comprises an n-type layer made of an n-type gallium nitride-based compound of the formula Al.sub.x Ga.sub.1-x N, wherein 0.ltoreq.X<1, and an i-type layer formed on the n-type layer and made of a semi-insulating i-type gallium nitride-based compound semiconductor and doped with a p-type impurity for junction with the n-type layer. A first electrode is formed on the surface of the i-type layer and made of a transparent conductive film and a second electrode is formed to connect to the n-type layer through the i-type layer. The device is so arranged that light is emitted from the side of the i-type layer to the outside. When an electric current is supplied to the first electrode from a wire contacted thereto, the first electrode is held entirely at a uniform potential. Light is emitted from the entire interface beneath the first electrode and can thus be picked up from the first electrode which is optically transparent.

Abstract: A steering wheel comprising a pair of sun gears set facing each other, each sun gear comprising a wheel portion having an inner surface and a rim portion protruding along the outer circumference of the wheel portion, slip rings mounted on the inner surface of the wheel portions, and contact pins, that make sliding contact with the slip rings on the wheel portions, provided between the sun gears.

Abstract: Roasted coffee beans, roasted beans or roasted cereals are extracted with a cyclic dextrin-containing liquid and/or this extract is dried to obtain an instant beverage. According to this process, valuable components of roasted coffee beans or the like are effectively extracted by the cyclic dextrin-containing liquid, and extracted soluble and aromatic components are effectively protected by the cyclic dextrin when the extract is dried to form an instant beverage. The obtained instant beverage such as instant coffee has excellent fragrance and flavor.

Abstract: Tea leaves are extracted with a cyclic dextrin-containing liquid and this extract is dried to obtain an instant beverage. According to this process, valuable components of tea leaves or the like are effectively extracted by the cyclic dextrin-containing liquid, and extracted soluble and aromatic components are effectively protected by the cyclic dextrin when the extract is dried to form an instant beverage. The obtained instant beverage such as instant tea has excellent fragrance and flavor.

Abstract: A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density .[.i.sub.H -layer.]. .Iadd.H-layer.Iaddend.. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.