Patents by Inventor Makoto Urushihara

Makoto Urushihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11343550
    Abstract: A transmission device encodes content data, divides the encoded content data into a plurality of pieces of transmission data, and transmits the pieces to, through a plurality of uploaders and a plurality of networks corresponding to the plurality of uploaders, a distribution device configured to perform content distribution.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: May 24, 2022
    Assignee: SONY CORPORATION
    Inventors: Yukio Ichikawa, Makoto Urushihara
  • Publication number: 20220148757
    Abstract: An insulated copper wire is an insulated copper wire having a copper wire and an insulating film coating a surface of the copper wire, in which the insulating film contains a polymer material having an amide bond, on a peeled surface formed on a surface of the insulated copper wire by peeling off the insulating film, there more copper atoms bonded to a nitrogen atom or a carbon atom than copper atoms bonded to an oxygen atom, an oxygen-containing layer containing 10 atom % or more of oxygen in a depth direction from the peeled surface is formed, and a film thickness of the oxygen-containing layer is in a range of 2 nm or more and 30 nm or less. An electric coil is formed by winding the above-described insulated copper wire.
    Type: Application
    Filed: February 17, 2020
    Publication date: May 12, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Urushihara, Hideaki Sakurai
  • Publication number: 20210289242
    Abstract: A transmission device encodes content data, divides the encoded content data into a plurality of pieces of transmission data, and transmits the pieces to, through a plurality of uploaders and a plurality of networks corresponding to the plurality of uploaders, a distribution device configured to perform content distribution.
    Type: Application
    Filed: September 14, 2017
    Publication date: September 16, 2021
    Inventors: YUKIO ICHIKAWA, MAKOTO URUSHIHARA
  • Patent number: 11012619
    Abstract: High image quality real-time distribution of omnidirectional images is enabled. An imaging unit obtains a front image and a back image each having an ultra-wide viewing angle of greater than or equal to 180°. A transmission unit transmits the front image and the back image each having the ultra-wide viewing angle to an external device.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: May 18, 2021
    Assignee: Sony Corporation
    Inventors: Yukio Ichikawa, Makoto Urushihara, Yukinobu Mine
  • Patent number: 10984922
    Abstract: There is provided an insulated electric wire comprising a conductor wire coated by an insulating film, in which the insulating film contains 5 to 20% by mass of a low boiling point component having a boiling point of less than 300° C. under normal pressure. The insulating film preferably has a thickness of 40 to 65 ?m. The conductor wire preferably has a cross-sectional shape in a rectangular shape or a square shape.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: April 20, 2021
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Urushihara, Hideaki Sakurai
  • Publication number: 20200395146
    Abstract: There is provided an insulated flat rectangular conductor including: a flat rectangular conductor; and an insulating film coating the flat rectangular conductor, in which the flat rectangular conductor has a first surface and a second surface opposite to the first surface, and the first surface is rougher than the second surface.
    Type: Application
    Filed: March 1, 2019
    Publication date: December 17, 2020
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Urushihara, Hideaki Sakurai
  • Patent number: 10743043
    Abstract: A management device includes a storage management unit configured to store, in a storage unit in accordance with a priority, a plurality of pieces of transmission data having corresponding time information among a plurality of pieces of transmission data generated by dividing a plurality of pieces of content data each encoded for a channel.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: August 11, 2020
    Assignee: SONY CORPORATION
    Inventors: Yukio Ichikawa, Makoto Urushihara
  • Publication number: 20200162670
    Abstract: High image quality real-time distribution of omnidirectional images is enabled. An imaging unit obtains a front image and a back image each having an ultra-wide viewing angle of greater than or equal to 180°. A transmission unit transmits the front image and the back image each having the ultra-wide viewing angle to an external device.
    Type: Application
    Filed: August 6, 2018
    Publication date: May 21, 2020
    Inventors: Yukio Ichikawa, Makoto Urushihara, Yukinobu Mine
  • Publication number: 20200043629
    Abstract: There is provided an insulated electric wire comprising a conductor wire coated by an insulating film, in which the insulating film contains 5 to 20% by mass of a low boiling point component having a boiling point of less than 300° C. under normal pressure. The insulating film preferably has a thickness of 40 to 65 ?m. The conductor wire preferably has a cross-sectional shape in a rectangular shape or a square shape.
    Type: Application
    Filed: February 13, 2018
    Publication date: February 6, 2020
    Inventors: Makoto Urushihara, Hideaki Sakurai
  • Publication number: 20200035407
    Abstract: There is provided an insulated electric wire formed by covering a rectangular conductor wire having a rectangular cross-sectional shape with an insulating film. The insulating film is formed of an inner layer covering a surface of the rectangular conductor wire, and an outer layer covering a surface of the inner layer. A thickness (t1) of a section of the inner layer, which covers one short side of two facing short sides of the same length of a rectangular cross section of the rectangular conductor wire, is greater than a thickness (t2) (including that t2=0) of a section of the inner layer which covers the other short side. An elastic modulus and/or a yield stress of the inner layer are less than an elastic modulus and/or a yield stress of the outer layer.
    Type: Application
    Filed: February 21, 2018
    Publication date: January 30, 2020
    Inventors: Makoto Urushihara, Yasuhiko Kudo, Shintaro Iida, Hideaki Sakurai
  • Publication number: 20190289344
    Abstract: A management device includes a storage management unit configured to store, in a storage unit in accordance with a priority, a plurality of pieces of transmission data having corresponding time information among a plurality of pieces of transmission data generated by dividing a plurality of pieces of content data each encoded for a channel.
    Type: Application
    Filed: August 21, 2017
    Publication date: September 19, 2019
    Inventors: YUKIO ICHIKAWA, MAKOTO URUSHIHARA
  • Patent number: 9994455
    Abstract: A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: June 12, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Wataru Saiki, Kazuki Mizushima, Makoto Urushihara
  • Patent number: 9169560
    Abstract: A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: October 27, 2015
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Publication number: 20130295401
    Abstract: A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
    Type: Application
    Filed: July 2, 2013
    Publication date: November 7, 2013
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Publication number: 20130276700
    Abstract: A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.
    Type: Application
    Filed: June 18, 2013
    Publication date: October 24, 2013
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Patent number: 8551580
    Abstract: A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: October 8, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Patent number: 8507051
    Abstract: A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: August 13, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Publication number: 20110052914
    Abstract: A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.
    Type: Application
    Filed: August 25, 2010
    Publication date: March 3, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Publication number: 20110014468
    Abstract: A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
    Type: Application
    Filed: July 12, 2010
    Publication date: January 20, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Patent number: 7831132
    Abstract: An information processing apparatus is configured to execute a sequence of processing operations for recording video data recorded to a first recording medium in a first format to a second recording medium in a second format, without user's manual intervention. Any one of three settings is provided in accordance with total time Tx of data to be written to a DVD: a first setting in which a maximum value of image bit rate (first value B1) and a maximum value of audio bit rate (second value B2) are used; a second setting in which a first value of image bit rate and a third value B3 of audio bit rate are used; and a third setting in which a fourth value of image bit rate determined on the basis of a line and the third value B3 of audio bit rate are used. The information processing apparatus may be an apparatus for recording the data recorded to a digital cassette video tape to a DVD.
    Type: Grant
    Filed: September 2, 2003
    Date of Patent: November 9, 2010
    Assignee: Sony Corporation
    Inventors: Makoto Urushihara, Keisuke Hiroi, Hideyuki Agata, Takashi Ohkubo, Yoshiyuki Takao